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savantic semiconductor product specification silicon pnp power transistors 2SA914 d escription with to-126 package complement to type 2sc1953 good linearity of h f e high v ceo applications for audio frequency power pre-amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximun ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -50 ma i cm collector current-peak -100 ma p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA914 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-0.1ma;i b =0 -150 v v (br)ebo emitter-base breakdown voltage i e =-10a ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-30ma ;i b =-3ma -1.0 v i cbo collector cut-off current v cb =-100v; i e =0 -1 a i ebo emitter cut-off current v eb =-5v; i c =0 -1 a h fe dc current gain i c =-10ma ; v ce =-5v 90 450 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 5 pf f t transition frequency i e =10ma ; v cb =-10v 200 mhz h fe classifications q r s t 90-155 130-220 185-330 260-450
savantic semiconductor product specification 3 silicon pnp power transistors 2SA914 package outline fig.2 outline dimensions

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