1/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.a 1.5v drive pch mosfet RZR040P01 z structure z dimensions (unit : mm) silicon p-channel mosfet z features 1) low on-resistance. 2) high power package. 3) low voltage drive. (1.5v) z applications switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) RZR040P01 tl 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 when mounted on a ceramic board source current (body diode) ? 12 150 ? 55 to + 150 10 4 16 ? 0.8 ? 16 1.0 z thermal resistance parameter c / w rth(ch-a) symbol limits unit c hannel to ambient ? when mounted on a ceramic board. 125 ? each lead has same dimensions (1) gate (2) source (3) drain tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.95 0.95 0.4 abbreviated symbol : ye ? 1 esd protection diode ? 2 body diode (1) gate (2) source (3) drain ? 2 ? 1 (1) (2) (3)
2/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.a data sheet RZR040P01 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs = 10v, v ds =0v v dd ? 6v ? 12 ?? vi d = ? 1ma, v gs =0v ??? 1 av ds = ? 12v, v gs =0v ? 0.3 ?? 1.0 v v ds = ? 6v, i d = ? 1ma ? 22 30 i d = ? 4a, v gs = ? 4.5v ? 30 42 m ? m ? m ? i d = ? 2a, v gs = ? 2.5v ? 40 60 i d = ? 2a, v gs = ? 1.8v m ? ? 55 110 i d = ? 0.8a, v gs = ? 1.5v 6.5 ?? sv ds = ? 6v, i d = ? 4a ? 2350 ? pf v ds = ? 6v ? 310 280 ? pf v gs =0v ? 11 ? pf f=1mhz ? 70 ? ns ? 380 ? ns ? 210 ? ns ? 30 ? ns ? 4.0 ? nc ? 3.5 ? nc v gs = ? 4.5v r l 1.5 ? r g =10 ? ?? nc i d = ? 4a v dd ? 6 v i d = ? 2a v gs = ? 4.5v r l 3 ? r g =10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ??? 1.2 v i s = ? 4a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ?
3/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.a data sheet RZR040P01 z electrical characteristics curves 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 v gs =0v pulsed ta=125c ta=75c ta=25c ta= -25c 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 v gs = -1.2v v gs = -1.3v ta=25c pulsed v gs = -1.5v v gs = -4.5v v gs = -2.5v v gs = -1.8v 0 2 4 6 8 10 0246810 v gs = -1.1v ta=25c pulsed v gs = -4.5v v gs = -2.5v v gs = -1.8v v gs = -1.5v v gs = -1.2v 1 10 100 1000 0.1 1 10 v gs = -1.5v pulsed ta= 125c ta=75c ta=25c ta= -25c 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 v ds = -6v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 1 10 100 1000 0.1110 ta=25c pulsed v gs = -4.5v v gs = -2.5v v gs = -1.8v v gs = -1.5v 1 10 100 1000 0.1110 v gs = -2.5v pulsed ta=125c ta=75c ta=25c ta= -25c 1 10 100 1000 0.1 1 10 v gs = -4.5v pulsed ta= 125c ta=75c ta=25c ta= -25c 1 10 100 1000 0.1110 v gs = -1.8v pulsed ta=125c ta=75c ta=25c ta= -25c fig .1 typical output characteristics( ) fig .2 typical output char acter istics( ) fig .3 typical transfer characteristics fig .4 static drain-source on-state resistance vs. drain current( ) fig .5 static drain-source on-state resistance vs. drain current( ) fig .6 static drain-source on-state resistance vs. drain current( ) fig .7 static drain-source on-state resistance vs. drain current( ) fig .9 reverse drain current vs. sourse-drain voltage fig .8 static drain-source on-state resistance vs. drain current( ) drain current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] reverse drain current : -is [a] drain-source voltage : -v ds [v] drain current : -i d [a] drain-source voltage : -v ds [v] drain current : -i d [a] gate-source voltage : -v gs [v] drain current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] static drain-source on-state resistance : r ds (on)[m ? ] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] drain-current : -i d [a] drain-current : -i d [a] source-drain voltage : -v sd [v]
4/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.a data sheet RZR040P01 z measurement circuits fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 10% 50% 50% pulse width v gs v ds t on t off tr t d(on) tf t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd z notice this product might cause chip aging and breakd own under the large electrified environment. please consider to design esd protection circuit. 0 50 100 150 200 0510 ta=25c pulsed i d = -2.0a i d = -4.0a 0 1 2 3 4 5 0 5 10 15 20 25 30 35 ta=25c v dd = -6v i d = -4.0a r g =10 ? pulsed 100 1000 10000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 1 10 100 0.1 1 10 v ds = -6v pulsed ta= -25c ta=25c ta=75c ta=125c 1 10 100 1000 0.01 0.1 1 10 tr tf td(on) td(off) ta=25c v dd = -6v v gs =- 4.5v r g =10 ? pulsed fig .10 static drain- source on-state resistance vs. gate source voltage fig .11 forward transfer admittance vs. drain current fig .12 dynamic input character istics fig .13 typical capacitance vs. drain-source voltage fig .14 switching character istics static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : -v gs [v] drain current : -i d [a] forward transfer admittance : |yfs|[s] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v ds [v] capacitance : c [pf] gate-source voltage : -v gs [v] total gate charge : qg [nc]
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