US6U37 transistors 1/4 2.5v drive nch+sbd mosfet US6U37 z structure silicon n-channel mosfet / schottky barrier diode z features 1) nch mosfet and schottky barrier diode are put in tumt6 package. 2) high-speed switching, low on-resistance. 3) low voltage drive (2.5v drive). 4) built-in low v f schottky barrier diode. z applications switching z package specifications package code taping basic ordering unit (pieces) US6U37 tr 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp limits unit drain-source voltage gate-source voltage drain current continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 30 12 1.5 6.0 0.6 6.0 ? 2 p d c tch power dissipation channel temperature 150 w / element 0.7 ? 2 ? 1 parameter v v rm symbol v v r a i f a i fsm tj limits unit repetitive peak reverse voltage reverse voltage forward current ? 1 60hz 1cycle ? 2 mounted on ceramic board forward current surge peak power dissipation junction temperature 25 20 0.7 10 w / element p d 0.5 150 c tumt6 abbreviated symbol : u37 0.2max. z dimension s ( unit : mm ) (1)gate (2)source (3)cathode (4)anode (5)anode (6)drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (1) (2) (6) (5) (3) (4) z inner circuit
US6U37 transistors 2/4 ? 1 parameter symbol w / total p d c tstg limits unit power dissipation range of storage temperature ? 1 mounted on a ceramic board ? 55 to + 150 1.0 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs = 12v, v ds =0v v dd 15v, v gs = 4.5v 30 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 30v, v gs =0v 0.5 ? 1.5 v v ds = 10v, i d = 1ma ? 170 240 i d = 1.5a, v gs = 4.5v ? 180 250 m ? m ? m ? i d = 1.5a, v gs = 4v ? 240 340 i d = 1.5a, v gs = 2.5v 1.5 ?? sv ds = 10v, i d = 1.5a ? 80 ? pf v ds = 10v ? 14 12 ? pf v gs =0v ? 7 ? pf f=1mhz ? 9 ? ns ? 15 ? ns ? 6 ? ns ? 1.6 ? ns ? 0.5 2.2 nc ? 0.3 ? nc i d = 1.5a ?? nc r l 10 ? , r g = 10 ? v dd 15 v i d = 0.75a v gs = 4.5v r l 20 ? r g =10 ? v sd ?? 1.2 v i s = 0.6a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions v f ?? 0.49 v i f = 0.7a forward voltage i r ?? 200 a v r = 20v reverse current parameter symbol min. typ. max. unit conditions
US6U37 transistors 3/4 z electrical characteristics curves drain-source voltage : v ds (v) 0.01 1 10 100 1000 0.1 1 10 100 capacitance : c (pf) fig.1 typical capacitance vs. drain-source voltage ta=25 c f=1mhz v gs =0v ciss coss crss drain current : i d (a) 0.01 1 10 100 1000 0.1 1 10 switching time : t (ns) fig.2 switching characteristics ta=25 c v dd =15v v gs =4.5v r g =10 ? pulsed tf td(off) td(on) tr total gate charge : qg (nc) 0 0 1 2 3 4 5 6 1 0.5 1.5 2 gate-source voltage : v gs (v) fig.3 dynamic input characteristics ta=25 c v dd =15v i d =1.5a r g =10 ? pulsed gate-source voltage : v gs (v) 0.001 0.01 0.1 1 10 0.0 0.5 1.0 2.0 1.5 2.5 drain current : i d (a) fig.4 typical transfer characteristics v ds =10v pulsed ta=125 c 75 c 25 c ? 25 c gate-source voltage : v gs (v) 0 0 0.1 0.7 0.8 0.9 0.6 0.2 0.3 0.4 0.5 1.0 123 10 45 6789 static drain-source on-state resistance : r ds (on) ( ? ) fig.5 static drain-source on-state resistance vs. gate source voltage ta=25 c pulsed i d =1.5a i d = 0.75a source-drain voltage : v sd (v) 0.0 0.01 0.1 1 10 0.5 1.0 1.5 source current : i s (a) fig.6 source current vs. source-drain voltage v gs =0v pulsed ta=125 c 75 c 25 c ? 25 c drain current : i d (a) 0.01 0.1 0.1 10 1 110 static drain-source on-state resistance : r ds (on) ( ? ) fig.7 static drain-source on-state resistance vs. drain current ( ) v gs =4.5v pulsed ta=125 c 75 c 25 c ? 25 c drain current : i d (a) 0.01 0.1 0.1 10 1 110 static drain-source on-state resistance : r ds (on) ( ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) v gs =4.0v pulsed ta=125 c 75 c 25 c ? 25 c drain current : i d (a) 0.01 0.1 0.1 10 1 110 static drain-source on-state resistance : r ds (on) ( ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? ) v gs =2.5v pulsed ta=125 c 75 c 25 c ? 25 c
US6U37 transistors 4/4 z measurement circuit fig.12 switching time test circuit v gs r g v ds d.u.t. i d r l v dd fig.13 switching time waveforms 90% 50% 50% 10% 10% 90% 90% 10% v gs v ds t on t off t r t d(on) t f t d(off) pulse width fig.14 gate charge measurement circuit v gs i g (const.) r g v ds d.u.t. i d r l v dd fig.15 gate charge waveform v g v gs charge q g q gs q gd z notice 1. sbd has a large reverse leak current compared to other type of diode. therefore; it would raise a junction temperature, and increase a reverse power loss. further rise of inside temperature would cause a thermal runaway. this built-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current. 2. this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 reverse voltage : vr [v] reverse current : ir [ua] pulsed ta= - 25 ta = 25 ta = 125 ta = 75 fig.10 reverse current vs. reverse 0.001 0.01 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 forward voltage : v f (v) forward current : i f (a) pulsed ta= - 25 ta = 25 ta = 125 ta = 75 fig.11 forward current vs. forward voltage
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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