? 2010 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? ? fax (631) 242-9798 ? www.sensitron.com ? sales@sensitron.com ? sensitron semiconductor technical data data sheet 5159, rev. - hermetic power mosfet n-channel features: ? 600 volt, 60a, 55 milli-ohm ? isolated hermetic metal package ? very low gate charge ? very low r ds (on) ? low package inductance-easy to drive and protect maximum ratings all ratings are at t c = 25 c unless otherwise specified. rating symbol min. typ. max. units gate to source voltage v gs - - 20 volts on-state drain current @ t c = 25 c i d (on) - - 60 amps pulsed drain current @ t c = 25 c i dm - - 220 amps operating and storage temperature t op /t stg -55 - +150 c thermal resistance, junction to case r thjc - - 0.36 c/w total device dissipation @ t c = 25 c p d - - 350 watts electrical characteristics rating symbol min. typ. max. units drain to source breakdown voltage v gs = 0v, i d = 250 a bv dss 600 - - volts static drain to source on state resistance v gs = 10v, i d = 44a r ds(on) - - 0.055 gate threshold voltage v ds = v gs , i d = 3ma v gs(th) 2.0 - 4.0 volts zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 0.8xmax. rating, v gs = 0v, t j = 125 c i dss - - - 20 500 a a gate to source leakage forward v gs = 20v gate to source leakage reverse v gs = -20v i gss - - 100 -100 na turn on delay time v ds = 400v, rise time i d = 44a, turn off delay time r g = 3.3 , fall time v gs = 10v t d(on) t r t d(off) t f - 40 30 130 20 - nsec diode forward voltage i s = 44a, v gs = 0v v sd - - 1.35 volts reverse recovery time i f = 44a, -di/dt = 100a/ sec, v r = 100v t rr - 600 - nsec input capacitance v gs = 0 v output capacitance v ds = 100 v f = 1 mhz c iss c oss - 6800 320 - pf gate charge i f = 44a, v ds = 400 v, v gs = 10v, r g = 3.3 q gs q gd q g - 34 51 150 - - 190 nc SHD224805
? 2010 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? ? fax (631) 242-9798 ? www.sensitron.com ? sales@sensitron.com ? sensitron technical data data sheet 5159, rev. - mechanical dimensions: in inches / mm 12 3 .270 .240 (6.86 6.10) .045 .035 (1.14 0.89) .140(3.56) bsc .550 .530 (13.97 13.46) .695 .685 (17.65 17.40) .835 .815 (21.21 20.70) .707 .697 (17.96 17.70) 1.302 1.202 (33.07 30.53) .065 .055 (1.65 1.40) 3 places .200(5.08) bsc 2 places .165 .155 (4.19 3.94) dia. pinout table device type pin 1 pin 2 pin 3 mosfet in a to-258 package drain source gate SHD224805 to-258 disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety s hould be ensured by using semi conductor devices that featur e assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconductor be liable for any dam ages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconductor be liable for any fa ilure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s ) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or par t, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be ap plied to that purpose by their direct purchasers or any thir d party. when exporting these products (technolog ies), the necessary procedures are to be taken in accordance with related laws and regulatio ns.
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