2SD2491, 2sd2492 silicon npn epitaxial application low frequency high voltage amplifier features isolated package to-126fm outline 1. emitter
2. collector
3. base to-126fm 1 2 3
2SD2491, 2sd2492 2 absolute maximum ratings (ta = 25c) ratings item symbol 2SD2491 2sd2492 unit collector to base voltage v cbo 160 200 v collector to emitter voltage v ceo 160 200 v emitter to base voltage v ebo 55v collector current i c 100 100 ma collector power dissipation p c 1.35 1.35 w collector power dissipation p c * 1 88w junction temperature tj 150 150 c storage temperature tstg C55 to +150 C55 to +150 c note: 1. value at t c = 25c electrical characteristics (ta = 25c) 2SD2491 2sd2492 item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo 160 200 v i c = 10 a, i e = 0 collector to emitter breakdown voltage v (br)ceo 160 200 v i c = 1 ma, r be = emitter to base breakdown voltage v (br)ebo 5 5 v i e = 10 a, i c = 0 collector cutoff current i cbo 10av cb = 140 v, i e = 0 10av cb = 160 v, i e = 0 dc current transfer ratio h fe1 * 1 60 320 60 320 v ce = 5 v, i c = 10 ma dc current transfer ratio h fe2 30 30 v ce = 5 v, i c = 1 ma base to emitter voltage v be 1.5 1.5 v v ce = 5 v, i c = 10 ma collector to emitter saturation voltage v ce(sat) 2 2 v i c = 30 ma, i b = 3 ma gain bandwidth product f t 140 140 mhz v ce = 5 v, i c = 10 ma collector output capacitance cob 3.8 3.8 pf v cb = 10 v, i e = 0 f = 1 mhz note: 1. the 2SD2491 and 2sd2492 are grouped by h fe1 and its specification is as follows.
2SD2491, 2sd2492 3 bcd 60 to 120 100 to 200 160 to 320 see characteristic curves of 2sd1609, 2sd1610. 8
6
4
2 0 ambient temperature ta ( c) collector power dissipation pc (w) 50 100 150 200 1.35w ta tc case temperature tc ( c) maximum collector dissipation curve
2SD2491, 2sd2492 4 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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