? 2000 ixys all rights reserved d5 - 39 v rsm v rrm type v v 640 600 dsei 1x 31-06c symbol test conditions maximum ratings (per diode) i frms t vj = t vjm 70 a i favm t c = 85 i frm t p < 10 i fsm t vj = 45 i 2 dt t vj = 45 t vj -40...+150 t vjm 150 t stg -40...+150 p tot t c = 25 v isol 50/60 hz, rms 2500 v~ i isol m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 v rrm 50 v rrm 7ma v f i f = 30 a; t vj = 150 v t0 for power-loss calculations only 1.01 v r t t vj = t vjm 7.1 m ? r thjc 1.25 k/w r thck 0.05 k/w t rr i f = 1 a; -di/dt = 100 a/ i rm v r = 350 v; i f = 30 a; -di f /dt = 240 a/ fast recovery dsei 1x 31 i favm = 30 a epitaxial diodes (fred) v rrm = 600 v t rr = 35 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to din/iec 60747 dsei 1x 31 features international standard package minibloc (isotop compatible) isolation voltage 2500 v~ ul registered e 72873 planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour applications antiparallel diode for high frequency switching devices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses operating at lower temperature or space saving by reduced cooling minibloc, sot-227 b 009
? 2000 ixys all rights reserved d5 - 40 dimensions minibloc sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08 fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage versus junction temperature. -di f /dt. fig. 7 transient thermal impedance junction to case. dsei 1 x31, 600 v
|
