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? 2003 microchip technology inc. preliminary ds70090a-page 1 rfrxd0420/0920 features: low cost single conversion superheterodyne receiver architecture compatible with rfpic? and rfhcs series of rf transmitters easy interface to picmicro ? microcontroller (mcu) and k ee l oq ? decoders vco phase locked to quartz crystal reference: - narrow receiver bandwidth - maximizes range and interference immunity selectable lna gain control for improved dynamic range selectable if bandwidth via external ceramic if filter received signal strength indicator (rssi) for signal strength indicati on (fsk, fm) and ask demodulation fsk/fm quadrature (phase coincidence) detector demodulator 32-lead lqfp package uhf ask/fsk receiver: single frequency receiver set by crystal frequency receive frequency range: maximum data rate: - ask: 80 kbps nrz - fsk: 40 kbps nrz if frequency range: 455 khz to 21.4 mhz rssi range: 70 db frequency deviation range: 5 khz to 120 khz maximum fm modulation frequency: 15 khz pin diagram: applications: wireless remote command and control wireless security systems remote keyless entry (rke) low power telemetry low power fm receiver home automation remote sensing bi-cmos technology: wide operating voltage range low current consumption in active and standby modes - rfrxd0420 - 8.2 ma (typical, lna high gain mode) - <100 na standby - rfrxd0920 - 9.2 ma (typical, lna high gain mode) - <100 na standby wide temperature range: - industrial: -40c to +85c device frequency range rfrxd0420 300 mhz to 450 mhz rfrxd0920 800 mhz to 930 mhz 2 3 4 5 6 1 15 16 9 10 11 12 29 8 7 32 31 30 13 14 23 24 17 18 19 20 21 22 27 25 26 28 dem in 2if out 1if out v dd fbc2 fbc1 2if in v ss v dd lna in v ss lf enrx v dd xtal v ss dem out - dem out + v ss rssi opa+ opa- opa v dd v ss lna gain lna out 1if in v ss 1if+ 1if- v dd rfrxd0420 lqfp rfrxd0920 uhf ask/fsk/fm receiver
rfrxd0420/0920 ds70090a-page 2 preliminary ? 2003 microchip technology inc. 1.0 device overview the rfrxd0420/0920 are lo w cost, compact single frequency short-range radio receivers requiring only a minimum number of exte rnal components for a complete receiver system. the rfrxd0420 covers the receive frequency range of 300 mhz to 450 mhz and the rfrxd0920 covers 800 mhz to 930 mhz. the rfrxd0420 and rfrxd0920 share a common architec- ture. they can be configured for amplitude shift keying (ask), frequency shift keying (fsk), or fm modula- tion. the rfrxd0420/0920 ar e compatible with rfpic? and rfhcs series of rf transmitters. high frequency stability over temperature and power supply variations low spurious signal emission high large-signal handling capability with selectable lna gain control for improved dynamic range selectable if bandwidth via external low cost ceramic if filter. the if frequency range is selectable between 455 khz to 21.4 mhz. this facilitates the use of re adily available low cost 10.7 mhz ceramic if filters in a variety of bandwidths. ask or fsk for digital data reception fm modulation for analog signal reception fsk/fm demodulation usi ng quadrature detector (phase coincidence detector) received signal strength indication (rssi) for signal strength indication and ask detection wide supply voltage range low active current consumption very low standby current the rfrxd0420/0920 is a sin gle conversion superhet- erodyne architecture. a block diagram is illustrated in figure 1-1. the rfrxd0420/0920 consists of: low-noise amplifier (lna) - gain selectable mixer for down-conversion of the rf signal to the intermediate frequency (if) followed by an if preamplifier fully integrated phase- locked loop (pll) frequency synthesizer for generation of the local oscillator (lo) signal. the frequency synthesizer consists of: - crystal oscillator - phase-frequency dete ctor and charge pump - high-frequency voltage controlled oscillator (vco) - fixed feedback divider - rfrxd0420 = divide by 16 - rfrxd0920 = divide by 32 if limiting amplifier to amplify and limit the if signal and for received sig nal strength indication (rssi) generation demodulator (demod) section consists of a phase detector (mixer2) and amplifier creating a quadrature detector (also known as a phase coincidence detector) to demodulate the if signal in fsk and fm modulation applications operational amplifier (opa) that can be config- ured as a comparator for ask or fsk data decision or as a filt er for fm modulation. bias circuitry for bandgap biasing and circuit shutdown
? 2003 microchip technology inc. preliminary ds70090a-page 3 rfrxd0420/0920 figure 1-1: rfrxd0420/0920 block diagram lna lna lna 1if 31 34 1if+ 1if- 7 6 9 11 12 13 21 1if 2if fbc1 fbc2 rssi 20 19 18 opa+ opa- opa xtal lf 29 26 bias enrx 28 lna 2 opa 16 15 2if dem + - - +- out+ out- 24 23 demod in out in out in gain out in v ss 1 v ss 5 v dd 8 v ss 10 v dd 14 v dd 17 v dd 32 v ss 30 27 v dd 25 v ss dem dem mixer1 if preamp if limiting amplifier mixer2 22 v ss with rssi crystal oscillator phase detector and charge pump voltage controlled oscillator fixed divide by frequency synthesizer 16: rfrxd0420 32: rfrxd0920
rfrxd0420/0920 ds70090a-page 4 preliminary ? 2003 microchip technology inc. table 1-1: rfrxd0420/0920 pinout i/o description pin name pin number pin type buffer type description lna gain 2 i cmos lna gain control (with hysteresis) lna out 3 o analog lna output (open collector) 1if in 4 i analog 1st if stage input 1if+ 6 -- analog mixer1 bias (open collector) 1if- 7 -- analog mixer1 bias (open collector) 1if out 9 o analog 1st if stage output 2if in 11 i analog 2nd if stage input fbc1 12 -- analog limiter if amplif ier external feedback capacitor fbc2 13 -- analog limiter if amplif ier external feedback capacitor 2if out 15 o analog 2nd if stage output dem in 16 i analog demodulator input opa 18 o analog operational amplifier output opa- 19 i analog operational amplifier input (negative) opa+ 20 i analog operational amplifier input (positive) rssi 21 o analog received signal strength indicator output dem out + 23 o analog demodulator output (positive) dem out - 24 o analog demodulator output (negative) xtal 26 i analog crystal oscillator input enrx 28 i cmos receiver enable input lf 29 i analog external loop filter connection. common node of charge pump output and vco tuning input. lna in 31 i analog lna input v dd 8, 14, 17, 27, 32 p positive supply v ss 1, 5, 10, 25, 30 p ground reference legend: i = input, o = out put, i/o = input/output, p = power, cmos = cmos compatible input or output
? 2003 microchip technology inc. preliminary ds70090a-page 5 rfrxd0420/0920 2.0 circuit description this section gives a circuit description of the internal circuitry of the rfrxd0420/0920 receiver. external connections and compone nts are given in the application circuits section. 2.1 bias circuitry bias circuitry provides bandgap biasing and circuit shutdown capabilities. the enrx (pin 28) modes are summarized in table 2-1. the enrx pin is a cmos compatible input and is internally pulled down to vss. 2.2 frequency synthesizer the phase-locked loop (pll) frequency synthesizer generates the local oscillator (lo) signal. it consists of: crystal oscillator phase-frequency detector and charge pump voltage controlled oscillator (vco) fixed feedback divider: - rfrxd0420 = divide by 16 - rfrxd0920 = divide by 32 2.2.1 crystal oscillator the internal crystal oscillator is a colpitts type oscilla- tor. it provides the refere nce frequency to the pll. a crystal is normally connected to the xtal (pin 26) and ground. the internal capacitan ce of the crystal oscilla- tor is 15 pf. alternatively, a si gnal can be injected into the xtal pin from a signa l source. the signal should be ac coupled via a series capacitor at a level of approximately 600 mv pp . the xtal pin is illustrated in figure 2-1. figure 2-1: block diagram of xtal pin the pll consists of a phase-frequency detector, charge pump, voltage-contro lled oscillator (vco), and fixed divide-by-16 (rfrxd0420) or divide-by-32 (rfrxd0920) divider. the rfrxd0420/0920 employs a charge pump pll that offers many advantages over the classical voltage phase de tector pll: infinite pull-in range and zero steady stat e phase error. the charge pump pll allows the use of pa ssive loop filters that are lower cost and minimize noise. charge pump plls have reduced flicker noise th us limiting phase noise. an external loop filter is connected to pin lf (pin 29). the loop filter controls the dynamic behavior of the pll, primarily lock time an d spur levels. the applica- tion determines the loop filter requirements. the vco gain for the rfrxd0420/0920 receivers are listed in table 2-2. the lf pin is illust rated in figure 2-2. figure 2-2: block diagram of loop filter pin 2.3 low noise amplifier the low-noise amplifier (lna) is a high-gain amplifier whose primary purpose is to lower the overall noise figure of the entire receiver thus enhancing the receiver sensitivity. the lna is an open-collector cascode design. the benefits of a cascode design are: high gain with low noise high-frequency wide bandwidth low effective input capacitance with stable input impedance high output resistance high reverse isolation th at provides improved stability and reduces lo leakage table 2-1: bias circuitry control enrx (1) description 0 standby mode 1 receiver enabled note 1: enrx has internal pull-down to vss xtal 26 40 a v ss v ss v ss 30 pf 30 pf 50 k ? v dd v dd v dd table 2-2: pll parameters device k vco (1) i cp (1) divider rfrxd0420 250 mhz/v at 433 mhz 60 a16 rfrxd0920 300 mhz/v at 868 mhz 60 a32 note 1: typical value lf 29 v ss v ss v ss 4 pf 200 ? 400 ? v dd
rfrxd0420/0920 ds70090a-page 6 preliminary ? 2003 microchip technology inc. approximate lna noise figures are listed in table 2-3. lna in (pin 31) has an input impedance of approxi- mately 26 ? || 2 pf single-ended. lna out (pin 3) has an open-collector output and is pulled up to v dd via a tuned circuit. important: to ensure lna stability the v ss pin (pin 1) must be connected to a low impedance ground. the lna pins are illu strated in figure 2-3. figure 2-3: block diagram of lna pins the gain of the lna can be selected between high and low gain modes by the lna gain pin (pin 2). lna gain is a cmos input with hysteresis. table 2-4 summarizes the voltage levels and modes for lna gain. in the high gain mode the lna operates normally. in low gain mode the gain of the lna is reduced approx- imately 25 db, reduces total supply current, and increases maximum input sign al levels (see electrical characteristics section for values). 2.4 mixer1 and if preamp mixer1 performs down-conversion of the rf signal to the intermediate frequency (if) and is followed by an if preamplifier. 1if in (pin 4) has an approximately 33 ? single-ended input impedance. the 1if in pin is illustrated in figure 2- 4. the 1if+ (pin 6) and 1if- (p in 7) are bias connections to the mixer1 balanced collectors. both pins are open-collector outputs and ar e individually pulled up to v dd by a load resistor. the mixer1 bias pins are illus- trated in figure 2-5. 1if out (pin 9) has an approximately 330 ? single- ended output impedance. the 330 ? impedance provides a direct match to low cost ceramic if filters. the 1if out pins is illustrated in figure 2-6. figure 2-4: block diagram of mixer1 pin figure 2-5: block diagram of mixer1 bias pins figure 2-6: block diagram of if preamp pin 2.5 if limiting amplifier with rssi the if limiting amplifier am plifies and limits the if signal at the 2if in pin (pin 11). it also generates the received signal strength indicator (rssi) signal (pin 21). 2.5.1 if limiting amplifier magnitude control circuitry is used in the last stage of the receiver to keep the sig nal constant for demodula- tion. it can consist of a limiting or automatic gain control (agc) amplifier. a limiting amplifier is table 2-3: lna noise figures device noise figure (1) rfrxd0420 tbd rfrxd0920 tbd note 1: approximate value table 2-4: lna gain control lna gain description < 0.8 v high gain mode > 1.4 v low gain mode lna lna 31 3 in out v ss 1 v ss v ss v ss 5 k ? v dd 0.8v 1.6v v dd 1if 4 in v ss v ss 13 ? 13 ? v dd 500 a 1if+ 6 500 a 1if- 7 500 a v ss v ss v ss v ss 20 pf 20 pf v dd v dd 1if 9 out 230 a v ss v ss 130 ? 6.8 k ? v dd v dd v dd
? 2003 microchip technology inc. preliminary ds70090a-page 7 rfrxd0420/0920 employed in this design beca use it can handle a larger dynamic range while consuming less power with simple circuitry than agc circuitry. the internal resist ance of the 2if in pin is approximately 2.2 k ? . in order to terminate ceramic if filters whose output impedance is 330 ? , a 390 ? resistor can be paralleled to the 2if in and fbc2 pins. fbc1 (pin 12) and fbc2 (pin 13) are connected to external feedback capacitors. the if limiting amplifie r pins are illustrated in figures 2-7 and 2-8. figure 2-7: block diagram of if limiting amplifier input pins figure 2-8: block diagram of if limiting amplifier output pin 2.5.2 received signal strength indicator (rssi) the rssi signal is proportional to the log of the signal at 2if in . the 2if in input rssi range is approximately 40 v to 160 mv. the slope of the rssi output is approximately 26 mv/db of rf signal. the rssi output has an internal 36 k ? resister to vss fed by a current source. this resistor converts the rssi current to voltage. for amplitude shift keying (ask) demodulation, rssi is compared to a reference voltage (static or dynamic). post detector filtering is easily implemented by connecting a capacitor to gr ound from the rssi pin effectively creating an rc filter with the internal 36 k ? resistor. for fsk and fm demodulation, the rssi represents the received signal strength of the incoming rf signal. the rssi pin is illustrated in figure 2-9. figure 2-9: block diagram of rssi pin 2.6 demodulator the demodulator (demod) se ction consists of a phase detector (mixer2) and ampl ifier creating a quadrature detector (also known as a ph ase coincidence detector) to demodulate the if signal in fsk and fm modulation applications. the quadrature detector provides all the if functions required fo r fsk and fm demodulation with only a few external parts. the in-phase signal comes di rectly from the output of the if limiting amplifier to mixer2. the quadrature signal is created by an extern al tuned circuit from the output of the if limiting amplifier (2if out , pin 15) ac- coupled to the mixer2 dem in (pin 16) input. the input impedance of the dem in pin is approximately 47 k ? . the external tuned circuit can be constructed from sim- ple inductor-capacitor (lc) components but will require one of the elements to be tunable. a no-tune solution can be constructed with a ceramic discriminator. the output voltage of the demod amplifier (demout+ and demout-, pins 23 and 24) depends on the peak deviation of the fsk or fm signal and the q of the external tuned circuit. demout+ and demout- are high impedance outputs with only a 20 a current capability. the demodulator pins are i llustrated in figures 2-10 and 2-11. figure 2-10: block diagram of demodulator input pin 2if 11 in 200 a fbc2 13 fbc1 12 v ss vss v ss v ss 2.2 k ? 2.2 k ? v dd v dd v dd 2if 15 out 40 a v ss v ss v dd v dd rssi 21 i (pi) v ss v ss 50 ? 36 k ? v dd dem 16 in v ss 47 k ? v dd v dd v dd
rfrxd0420/0920 ds70090a-page 8 preliminary ? 2003 microchip technology inc. figure 2-11: block diagram of demodulator outptut pins 2.7 operational amplifier the internal operational amplifier (opa) can be configured as a comparator for ask or fsk or as a filter for fm modulation applications. the op amp pins are illust rated in figures 2-12 and 2-13. figure 2-12: block diagram of op amp input pins figure 2-13: block diagram of op amp output pin dem 23 out+ dem 24 out- v ss v ss v ss v ss v ss v ss 50 ? 50 ? v dd 20 a 20 a v dd 20 a 20 a opa- 19 opa+ 20 20 a v ss v ss 50 ? 50 ? v dd v dd v dd opa 18 v ss v ss 50 ? v dd v dd
? 2003 microchip technology inc. preliminary ds70090a-page 9 rfrxd0420/0920 3.0 application circuits this section provides gene ral information on applica- tion circuits for the rfrxd0420/0920 receiver. the following connections and external components provide starting points for de signs and list the minimum circuitry recommended for general purpose applications. performance of the radio system (transmitter and receiver) is affected by co mponent selection and the environment in which it opera tes. each system design has its own unique requirements. specifications for a particular design requires careful analysis of the appli- cation and compromises for a practical implementation. 3.1 general this subsection lists connections and components that are common between applications. the following subsections give specific circuit connections and components for ask, fsk and fm applications. 3.1.1 bypass capacitors bypass capacitors should be placed as physically close as possible to v dd pins 8, 14, 17, 27 and 32 respectively. additional by passing and board level low- pass filtering of the power supply may be required depending on the application. 3.1.2 frequency planning the rfrxd0420/0920 receive rs are single-conversion superheterodyne architecture with a single if frequency. the receive freque ncy is set by the crystal frequency (f xtal ) and intermediate frequency (f if ). for a majority of applications an external crystal is connected to xtal (pin 26). figure 3-1 illustrates an example circuit with an optional trim capacitor. figure 3-1: xtal example circuit with optional trim capacitor the crystal load capacitance should be specified to include the internal load capacitance of the xtal pin of 15 pf plus pcb stray capacitance (approximately 2 to 3 pf). a trim capacitor can be used to trim the crystal on frequency within the limi tations of the crystal?s trim sensitivity and pullability. figure 3-2 illustrates the effect the trim capacitor has on the receive frequency for the rfrxd0420 at 433. 92 mhz. keep in mind that this graph represents on e example circuit and the actual results depends on the crystal and pcb layout. figure 3-2: receive frequency vs. trim capacitance note that a 0 ? resistor, in the lower left of the graph, represents an infinite capa citance. this will be the lowest frequency obtainabl e for the crystal and pcb combination. calculation of the crystal frequency requires knowl- edge of the receive frequency (f rf ) and intermediate frequency (f if ). figure 3-3 is a worksheet to assist the designer in calculating the cr ystal frequency. table 3-1 lists crystal frequencies fo r popular receive frequen- cies. table 3-2 lists crystal parameters required for ordering crystals. for background information on crystal selection see appl ication note an826, crystal oscillator basics and crys tal selection for rfpic tm and picmicro ? devices. xtal 26 c trim (optional ) x1 table 3-1: crystal frequencies for popular receive frequencies receive frequency crystal frequency rfrxd0420 315 mhz 20.35625 mhz (2) 433.92 mhz 26.45125 mhz (1) rfrxd0920 868.3 mhz 26.8 mhz (1) 915 mhz 28.259375 mhz (1) (1) low-side injection (2) high-side injection table 3-2: crystal parameters parameter value frequency: (see figure 3-1) mode: fundamental load capacitance: 15-20 pf esr: 60 ? maximum these values are for design guidance only. 433.75 433.80 433.85 433.90 433.95 434.00 434.05 434.10 0 ohms 82 pf 68 pf 56 pf 47 pf 39 pf 33 pf 27 pf 22 pf 18 pf 15 pf 12 pf 10 pf 5 pf trim capacitor (pf) receive frequency (mhz)
rfrxd0420/0920 ds70090a-page 10 preliminary ? 2003 microchip technology inc. figure 3-3: frequency planning worksheet step 1: identify receive (f rf ) and if frequency (f if ). step 2: calculate crystal frequencies for high- and lo w-side injection: high-side injection low-side injection step 3: calculate local oscillator (lo) frequencies (f lo ) using f xtal-high and f xtal-low : high-side injection low-side injection step 4: select high-side injection (f lo-high ) or low-side injection (f lo-low ) that corresponds to the lo frequency that is between the ranges of: step 5: from the chosen injection mode in step 4, write the selected crystal frequency (f xtal ) and circle injection mode. step 6: calculate image frequency (f rf-image ) for the injection mode chosen: if high-side injection if low-side injection note: image frequency should be sufficiently filtered by the preselector for the application. f rf = ____________________ f if = ____________________ f xtal-high = ( f rf + f if ) = ( _________ + _________ ) = _______________ pll divide ratio 16 if rfrxd0420 32 if rfrxd0920 f xtal-low = ( f rf - f if ) = ( _________ - _________ ) = _______________ pll divide ratio 16 if rfrxd0420 32 if rfrxd0920 f lo-high = f xtal-high x pll divide ratio = _________ x 16 if rfrxd0420 = _____________ 32 if rfrxd0920 f lo-low = f xtal-low x pll divide ratio = _________ x 16 if rfrxd0420 = _____________ 32 if rfrxd0920 device lo frequency range rfrxd0420 300 to 430 mhz rfrxd0920 800 to 915 mhz (circle one) f xtal = ___________________ _ high-side injection low-side injection f rf-image = f rf + (2 x f if ) = ___________ + ( 2 x _ __________ ) = ______________ f rf-image = f rf - (2 x f if ) = ___________ - ( 2 x ___________ ) = ______________ f rf f if f lo f xtal x pll divide ratio
? 2003 microchip technology inc. preliminary ds70090a-page 11 rfrxd0420/0920 3.1.3 pll loop filter an external pll loop filt er is connected to pin lf (pin 29). the loop filter controls the dynamic behavior of the pll, primarily lock time and spur levels. gener- ally, the pll lock time is a small fraction of the overall receiver start-up time (see electrical characteristics section). the crystal oscillato r is the largest contributor to start-up time. thus, for the majority of applications, design loop filter values fo r a wide loop bandwidth to suppress noise. figure 3-4 illustrates an example filter circuit for a wide frequency range suitable for a majority of applications. figure 3-4: pll loop filter example circuit 3.1.4 preselector receiver performance is he avily influenced by the preselector (also known as the front-end filter). the purpose of the preselector is to filter unwanted signals and noise from ente ring the receiver. the most important unwanted signal is the image frequency (f rf-image ). pay particular attention to the image frequency calculated in figure 3-3 as this will be the frequency that needs to be filtered out by the preselector. the preselector can be designed using a simple lc filter or a surface acoustic wave (saw) filter. a simple lc filter provides a low cost solution but will have the least effect filtering the im age frequency. a saw filter can effectively filter th e image frequency with a minimum of 40 db attenuation. the saw filter has the added advantage of filtering wide-band noise and impr oving the signal-to-noise ratio (snr) of the receiver. saw filters require impedance matching. refer to the manufacturers' data sheet and application notes for saw filter pinouts, specif ied impedances and recom- mended matching circuits . figure 3-5 shows a saw filter example circuit. a secondary purpose of the preselector is to provide impedance matching betwe en the antenna and lna in (pin 31). 3.1.5 antenna receiver performance and device packaging influence antenna selection. there ar e many third-party anten- nas to choose from. third-party antennas typically have an impedance of 50 ?. the preselector compo- nents should be chosen to ma tch the impedance of the antenna to the lna in (pin 31) impedance of 26 ? || 2 pf. the designer can chose to use a simple wire antenna. the length of the wire shoul d be one-quarter the wave- length ( ) of the receive frequency. for example, the wavelength of 433.92 mhz is: = c / f rf where c = 3 x 10 8 m/s = 3 x 10 8 m/s / 433.92 x 10 6 hz = 0.69 m therefore 0.25 = 17.3 cm or 6.8 inches finally, the wire ante nna should be impedance matched to the preselector. the typical impedance of a one-quarter wavelength wire antenna is 36 ?. 3.1.6 lna gain for a majority of applications, lna gain can be tied to vss (ground) enabling high gain mode. if the applica- tion requires short range communications, lna gain can be tied to v dd (pulled up) enabling low gain mode. more information on lna gain operation can be found in the circuit description section. figure 3-5: saw filter example circuit lf 29 10 k ? 1000 pf optional c1 r1 c2 lna in antenna c1 c2 l1 l2 input input gnd output output gnd 3478 case gnd saw filter f1 2 1 5 6 note: refer to saw filter manufacturer?s data sheet for pin outs and values for impedanc e matching components.
rfrxd0420/0920 ds70090a-page 12 preliminary ? 2003 microchip technology inc. 3.1.7 lna tuned circuit the lna out (pin 3) has an ope n-collector output. it is pulled up to v dd via a tuned circuit. it is also connected to 1if in (pin 4) via a series decoupling capacitor. the 1if in input impedance is approximately 33 ? || 1.5 pf. important: to ensure lna stability the v ss pin (pin 1) must be connected to a low impedance ground. as shown in figure 3-6, components c1 and l1 make up the tuned circuit and pr ovide collector current via pull-up. together with de coupling capacitor c2, they provided impedance matchi ng between the lna and mixer1. to a lesser extent, c1, l1, and c2 provide band-pass filtering at the receive frequency (f rf ). component values depend on the selected receive frequency. the challenge is to design the circuit with the fewest components setti ng q as high as possible as limited by component to lerances. for a majority of applications it is best to de sign a wide bandwidth tuned circuit to account for m anufacturing and component tolerances. the best approa ch is to design the tuned circuit using a filter simulation program. table 3-3 lists example component val ues for popular receive frequencies. figure 3-6: lna output to mixer1 example circuit. 3.1.8 mixer1 bias the 1if+ (pin 6) and 1if- (p in 7) are bias connections to the mixer1 balanced collectors. both pins are open-collector outputs and ar e individually pulled up to v dd by a load resistor. figure 3-7 shows a mixer1 bias example circuit. figure 3-7: mixer1 bias example circuit 3.1.9 intermediate frequency (if) filter the if filter defines the ov erall adjacent signal selectiv- ity of the receiver. for a ma jority of applications, low- cost 10.7 mhz ceramic if filters are used. these are available in a variety of bandwidths and packages. if filter bandwidth sele ction is a function of: modulation (ask, fsk or fm) signal bandwidth frequency and temperature tolerances of the transmitter and re ceiver components the typical input and out put impedance of ceramic filters is 330 ? . 1if out (pin 9) has an approximately 330 ? single-ended output im pedance and provides a direct match to the ceramic if filter. the internal resis- tance of the 2if in (pin 11) is approximately 2.2 k ? . in order to terminate ceramic if filters a 390 ? resistor can be paralleled to the 2if in and fbc2 (pin 13). figure 3-8 shows an example circuit schematic using a 10.7 mhz ceramic if filter. 3.1.10 if limiting amplifier external feedback capacitors fbc1 (pin 12) and fbc2 (pin 13) are connected to external feedback capacitors. figure 3-8 shows component values and connections for these capacitors. table 3-3: lna tuned circuit example component values f rf c1 l1 c2 315 mhz 7.0 pf 22 nh 6.0 pf 433.92 mhz 3.0 pf 15 nh 6.0 pf 868.3 mhz 2.0 pf 7.6 nh 3.0 pf 915 mhz 2.0 pf 6.8 nh 3.0 pf these values are for design guidance only. lna 1if 34 out in v dd c bypass c1 c2 l1 1if+ 1if- 7 6 v dd v dd r1 470 ? r2 470 ?
? 2003 microchip technology inc. preliminary ds70090a-page 13 rfrxd0420/0920 figure 3-8: if filter, limiting amplifier and demodulator block diagram 11 12 13 21 2if fbc1 fbc2 rssi 16 15 2if dem out+ out- 24 23 demod in out in dem dem if limiting amplifier mixer2 with rssi + + - - + - out 9 1if 1000 pf 1000 pf 33000 pf ceramic filter 10.7 mhz r1 50 ? r2 36 k ? 2.2 k ? 2.2 k ? 390 ? external feedback capacitors if preamp
rfrxd0420/0920 ds70090a-page 14 preliminary ? 2003 microchip technology inc. figure 3-9: ask application circuit lna lna lna 1if 31 34 1if+ 1if- 7 6 9 11 12 13 21 1if 2if fbc1 fbc2 rssi 20 19 18 opa+ opa- opa xtal lf 29 26 bias enrx 28 lna 2 opa 16 15 2if dem + + - - +- out+ out- 24 23 demod in out in out in gain out in v ss 1 v ss 5 v dd 8 v ss 10 v dd 14 v dd 17 v dd 32 v ss 30 27 v dd 25 v ss dem dem mixer1 if preamp if limiting amplifier mixer2 22 v ss with rssi +v +v +v +v +v +v +v +v ant rxdata c1 1800 pf c2 47000 pf c3 330 pf c4 330pf c7 330pf c9 optional c10 optional c11 1000pf c12 1000 pf c13 1000 pf c14 330 pf c16 330 pf c18 330 pf c8 33000 pf c15 c17 f2 10.7 mhz l3 r1 100 k ? r3 10 k ? r2 390 ? r4 470 ? r5 470 ? x1 loop filter capacitor nc nc to antenna matching network crystal trim capacitor crystal oscillator phase detector and charge pump voltage controlled oscillator fixed divide by frequency synthesizer 16: rfrxd0420 32: rfrxd0920 nc nc
? 2003 microchip technology inc. preliminary ds70090a-page 15 rfrxd0420/0920 3.2 amplitude shift keying (ask) figure 3-9 illustrates an ex ample ask applications cir- cuit. the if limiting amplifier wi th rssi is used as an ask detector. the rssi signal is post detector filtered and then compared to a referenc e voltage to determine if the incoming rf signal is a logical one or zero. the reference voltage can be configured as a dynamic voltage level determined by the incoming rf signal strength or by a predetermined fixed level. 3.2.1 rssi post detector filtering the rssi signal is low-passed filtered to remove high frequency and pulse noise to aid the decision making process of the comparator a nd increase the sensitivity of the receiver. the rssi sig nal low-pass filter is a rc filter created by the rs si output impedance of 36 k ? and capacitor c1. setting the time constant (rc = ) of the rc filter depends on the signal period and when the signal decision w ill be made. 3.2.1.1 signal period optimum sensitivity of the receiver with reasonable pulse distortion occurs when the rc filter time constant is between 1 and 2 times the signal period. if the time constant of the rc filter is se t too short, there is little noise filtering benefit. howeve r, if the time constant of the rc filter is set too long , the data pulses will become elongated causing inter- symbol interference. 3.2.1.2 signal decision if the bit decision occurs in the center of the signal period (such as k ee l oq decoders), then one or two times the rc filter time co nstant should be set at less than or equal to half the si gnal period. figure 3-10 illus- trates this method. the top trace represents the received on-off keying (ook) signal. the bottom trace shows the rssi signal after the rc low-pass filter. figure 3-10: center signal period decision rssi low-pass filtered if the bit decision occurs ne ar the end of the signal period, then the time cons tant should be set at less than or equal to the sig nal period. figure 3-11 illustrates this method. once the signal decision time and time period of the signal period are known, then capacitor c1 can be selected. once c1 is selected, the designer should observe the rssi signal with an oscilloscope and perform operational and/or bit error rate testing to confirm receiver performance. figure 3-11: near end of the signal period decision rssi low- pass filtered 3.2.2 comparator the internal operational ampl ifier is configured as a comparator. the rssi signal is applied to opa+ (pin 20) and compared with a reference voltage on opa- (pin 19) to determine the logic level of the received signal. the reference voltag e can be dynamic or static. the choice of dynamic versus static reference voltage depends in part on the ra tio of logical ones versus zeros of the data (this can a lso be thought of as the ac content of the data). pro vided the ratio has an even number of logical ones versus zeros, a dynamic refer- ence voltage can be genera ted with a simple low-pass filter. the advantage of the dynamic reference voltage is the increased receiver sen sitivity compared to a fixed reference voltage. however, the comparator will output random data. the decoder (for example, a pro- grammed picmicro mcu or k ee l oq decoder) must distinguish between ran dom noise and valid data. the choice of a static refere nce voltage depends in part on the dc content of the data. that is, the data has an uneven number of logical ones versus zeros. the disadvantage of the static reference voltage is decreased receiver sensitivity compared to a dynamic reference voltage. in this case, the comparator will output data without random noise. signal period 1 to 2 signal decision ook signal rssi signal signal period 1 to 2 signal decision ook signal rssi signal
rfrxd0420/0920 ds70090a-page 16 preliminary ? 2003 microchip technology inc. 3.2.2.1 dynamic reference voltage a dynamic reference voltage can be derived by averag- ing the received signal with a low-pass filter. the exam- ple ask application circuit shown in figure 3-9, the low-pass filter is formed by r1 and c2. the output of the low-pass filter is then fed to opa-. the setting of the r1-c2 ti me constant depends on the ratio of logical ones vers us zeros and a trade off in stability versus receiver re action time. if the received signal has an even number of logical ones versus zeros, the time constant can be set relatively short. thus the reference volt age can react quickly to changes in the received si gnal amplitude and differ- ences in transmitters. howeve r, it may not be as stable and can fluctuate with the ratio of logical ones and zeros. if the time constant is set long, the reference voltage will be more stab le. however, the receiver cannot react as quickly upon the reception of a received signal. selection of component values for r1 and c2 is an iterative process. first st art with a time constant between 10 to 100 times the signal rate. second, view the reference voltage against the rssi signal to determine if the values ar e suitable. figure 3-12 is an oscilloscope screen capture of an incoming rf square wave modulated signal (ask on-off keying). the top trace is the data output of opa (pin 18). the two bottom traces are the rssi signal (pin 21, bottom square wave) and generated reference voltage (pin 19, bottom trace centered in the rssi square wave). the goal is to select values fo r r1 and c2 such that the reference voltage is in the middle of the rssi signal. this reference voltage level provides the optimum data comparison of the incoming data signal. 3.2.2.2 static reference voltage a static reference voltage ca n be derived by a voltage divider network. figure 3-12: rssi and reference voltage comparison opa (pin 18) opa- (pin 19) rssi (pin 21)
? 2003 microchip technology inc. preliminary ds70090a-page 17 rfrxd0420/0920 figure 3-13: fsk application circuit lna lna lna 1if 31 34 1if+ 1if- 7 6 9 11 12 13 21 1if 2if fbc1 fbc2 rssi 20 19 18 opa+ opa- opa xtal lf 29 26 bias enrx 28 lna 2 opa 16 15 2if dem + - +- out+ out- 24 23 demod in out in out in gain out in v ss 1 v ss 5 v dd 8 v ss 10 v dd 14 v dd 17 v dd 32 v ss 30 27 v dd 25 v ss dem dem mixer1 if preamp if limiting amplifier mixer2 22 v ss with rssi +v +v +v +v +v +v +v +v rssi ant rxdata c1 10-47 pf c2 10-47 pf c3 330 pf c4 330 pf c7 330 pf c9 optional c10 optional c11 1000 pf c12 1000 pf c13 1000 pf c14 330 pf c16 330 pf c18 330 pf c30 330 pf c32 680 pf c8 33000 pf c15 c17 c31 10-12 pf c33 1.0 pf f2 10.7 mhz f3 l3 r3 10 k ? r2 390 ? r4 470 ? r5 470 ? x1 to antenna matching network note: demodulator output low-pass capacitors dependent on signal rate crystal oscillator phase detector and charge pump voltage controlled oscillator fixed divide by frequency synthesizer 16: rfrxd0420 32: rfrxd0920 loop filter capacitor crystal trim capacitor
rfrxd0420/0920 ds70090a-page 18 preliminary ? 2003 microchip technology inc. 3.3 frequency shift keying (fsk) figure 3-13 illustrates an example fsk application circuit. 3.3.1 if filter considerations as mentioned in the section 3.1 above, if filter band- width selection is a function of: modulation (ask, fsk or fm) signal bandwidth frequency and temperature tolerances of the transmitter and receiver components the occupied bandwidth of binary fsk signals is 2 times the peak frequency de viation plus 2 times the signal bandwidth. for example, if the data rate is 2400 bits per second manchest er encoded, the signal band- width is 4800 baud or 1200 hz, and if the peak frequency deviation is 24 kh z, the minimum bandwidth of the if filter is: add to this value the frequency and temperature tolerances of the transmitte r and receiver components. fsk signals are more sensit ive to group delay varia- tions of the if filter. therefor e, a filter with a low group delay variation should be used. as an alternative, a filter with wider than required bandwidth can be used because the group delay variat ion in the center of the bandpass will be relatively constant. 3.3.2 fsk detector the demodulator (demod) section consists of a phase detector (mixer2) and amp lifier creating a quadrature detector (also known as a phase coincidence detector) to demodulate the if signal in fsk and fm modulation applications. the in-phase signal comes directly from the output of the if limiti ng amplifier to mixer2. the quadrature signal is created by an external tuned circuit from the output of the if limiting amplifier (2if out , pin 15) ac-coupled to the mixer2 dem in (pin 16) input. 3.3.2.1 lc discriminator the external tuned circui t can be constructed from simple inductor-capacitor (lc) components. this type circuit produces and excell ent output. however, one of the elements (l or c) must be tunable. figure 3-14 illustrates an example lc d iscriminator circuit using a tunable capacitor. a similar ci rcuit with a tunable induc- tor is also possible. resistor r1 = 4.7 k ? reduces the q of the circuit so that freq uency deviations of up to 75 khz can be demodulated. figure 3-14: lc discriminator example circuit 3.3.2.2 ceramic discriminator a no-tune solution can be constructed with a ceramic discriminator. figure 3-15 illustrates an example ceramic discriminator circuit. the ceramic discriminator acts as a parallel tuned circuit at the if frequency (f or example, 10.7 mhz). the parallel capacitor c3 tunes the ceramic resonator. the high q of this circuit enables higher output of the detec- tor for small frequency devia tions. however, smaller frequency deviations require better frequency tolerances at the transmitter and receiver. in order to detect wider deviation or off-frequency signals, the detector bandwi dth has to be increased. this can be accomplished by reducing the q of the tuned circuit. one method is to parallel a resistor across the ceramic discriminator. a second is to increase the value of the coupling capacitor c1 increasing the load on the detector. the result of reducing the q of the discri minator will be that the detector output will be smaller. figure 3-15: ceramic discriminator example circuit if bw min = (2 x 2400) + (2 x 24000) if bw min = 52800 hz 16 15 2if dem out in c2 680 pf c1 1.0 pf 0-56 pf c3 3.3 h l1 r1 4.7 k ? 16 15 2if dem out in c2 680 pf c1 1.0 pf c3 10-12 pf f1 ceramic discriminator
? 2003 microchip technology inc. preliminary ds70090a-page 19 rfrxd0420/0920 3.3.3 post detector filtering care should be taken in sele cting the values of capac- itors c1 and c2 (figure 3-13) so that the output of the detector is not distorte d and receiver sensitivity improved. these values ar e chosen depending on the data signal rate. generally, if the data signal rate is fast then the filter time constant can be set shor t. conversely, if the signal rate is slow, the filter time constant can be set long. the designer should observe the output of the detector with an oscilloscope and perform operational and/or bit error rate testing to confirm receiver performance. 3.3.4 comparator the output of the demod amplifier (dem out + and dem out -, pins 23 and 24 ) depends on the peak deviation of the fsk or fm signal and the q of the external tuned circuit. de mout+ and demout- are high impedance outputs with only a 20 a current capability. the capacitance on these pins limit the maximum data signal rate. the nominal outpu t voltage of these pins is 1.23v.
rfrxd0420/0920 ds70090a-page 20 preliminary ? 2003 microchip technology inc. figure 3-16: fm application circuit lna lna lna 1if 31 34 1if+ 1if- 7 6 9 11 12 13 21 1if 2if fbc1 fbc2 rssi 20 19 18 opa+ opa- opa xtal lf 29 26 bias enrx 28 lna 2 opa 16 15 2if dem + + - - +- out+ out - 24 23 demod in out in out in gain out in v ss 1 v ss 5 v dd 8 v ss 10 v dd 14 v dd 17 v dd 32 v ss 30 27 v dd 25 v ss dem dem mixer1 if preamp if limiting amplifier mixer2 22 v ss with rssi +v +v +v +v +v +v +v +v rxaudio ant rssi c1 330 pf c3 330 pf c4 330 pf c4 330 pf c9 optional c11 1000 pf c12 1000 pf c13 1000 pf c14 330 pf c16 330 pf c18 optional c30 330 pf c32 680 pf c34 100 pf c35 100 pf c8 33000 pf c15 c17 c31 10-12 pf c33 1.0 pf f1 10.7 mhz f3 l3 r3 10 k ? r30 6.8 k ? r31 12 k ? r32 33 k ? r33 33 k ? r2 390 ? r4 470 ? r5 470 ? x1 loop filter capacitor to antenna matching network nc crystal oscillator phase detector and charge pump voltage controlled oscillator fixed divide by frequency synthesizer 16: rfrxd0420 32: rfrxd0920 crystal trim capacitor
? 2003 microchip technology inc. preliminary ds70090a-page 21 rfrxd0420/0920 3.4 frequency modulation (fm) figure 3-16 illustrates an example fm application circuit. 3.4.1 fsk detector fm demodulation is perform ed in the same manner as described in the fsk section above. 3.4.2 operational amplifier the internal operational ampl ifier is configured as an active low-pass filter. fm audio is typically de- emphasized. it is recom- mended that de-emphasis circuitry be connected at the output of the operational amplifier rather than the output of the detector.
rfrxd0420/0920 ds70090a-page 22 preliminary ? 2003 microchip technology inc. 4.0 electrical characteristics absolute maximum ratings supply voltage............. .................................. .................................. ................................ ..................................0 to +7.0v input voltage................ .................................. .................................. .............................. .........................-0.3 to v cc +0.3v input rf level ........ ........................................ .................................. ............................... .......................... ..............10dbm storage temperature .......................... ............................................. ..................................... ........................ -40 to +125c ? notice: stresses above those list ed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional oper ation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. expo sure to maximum rating conditions for extended periods may af fect device reliability.
? 2003 microchip technology inc. preliminary ds70090a-page 23 rfrxd0420/0920 4.1 dc characteristics: rfrxd0420 (industrial) * these parameters are characterized but not tested. ? data in ?typ? column is at 3v, 23c unless otherwise stated. these parameters ar e for design guidance only and are not tested. 4.2 ac characteristics: rfrxd0420 (industrial) * these parameters are characterized but not tested. ? data in ?typ? column is at 3v, 23c, f rf = 433.6 mhz, if = 10.7 mhz unles s otherwise stated. these parameters are for design guidance only and are not tested. note 1: dependant on ask detector time constant. 2: if bandwidth = 40 khz, ? f = +/- 15 khz, ber <= 3 x 10 -3 3: if bandwidth = 150 khz, ? f = +/- 50 khz, ber <= 3 x 10 -3 4: if bandwidth = 40 khz, ber <= 3 x 10 -3 5: if bandwidth = 150 khz, ber <= 3 x 10 -3 dc characteristics standard operating conditions (unless otherwise stated) operating temperature -40c t a +85c param no. sym characteristic min typ ? max units conditions v cc supply voltage 2.5 ? 5.5 v f rf < 400 mhz 2.7 ? 5.5 v f rf > 400 mhz i stby standby current 100 na enrx = 0 i cc supply current 5.0 6.5 8.0 ma lna gain = 1 6.5 8.2 10.0 ma lna gain = 0 v opa op amp input voltage offset -20 ? 20 mv i opa op amp input current offset -50 ? 50 na i bias op amp input bias current -100 100 na v rssi rssi voltage 0.5 1.0 1.5 v lna gain = 1 1.25 1.9 2.45 v lna gain = 0 ac characteristics standard operating conditions (unless otherwise stated) operating temperature -40c t a +85c param no. sym characteristic min typ ? max units conditions t fsk start-up time - fsk/fm 0.9 ms enrx = 0 to 1 t ask start-up time - ask r1xc1 +t fsk ms note 1 sensitivity - narrowband fsk -111 dbm note 2 sensitivity - wideband fsk -104 dbm note 3 sensitivity - narrowband ask -109 dbm note 4 sensitivity - wideband ask -106 dbm note 5 input rf level maximum fsk/ fm 0 dbm lna gain = 1 input rf level maximum ask -10 dbm lna gain = 1
rfrxd0420/0920 ds70090a-page 24 preliminary ? 2003 microchip technology inc. 4.3 dc characteristics: rfrxd0920 (industrial) * these parameters are characterized but not tested. ? data in ?typ? column is at 3v, 23c unless otherwise st ated. these parameters are for design guidance only and are not tested. 4.4 ac characteristics: rf rxd0920 (industrial) * these parameters are characterized but not tested. ? data in ?typ? column is at 3v, 23c, f rf = 433.6 mhz, if = 10.7 mhz unless otherwise stated. these parameters are for design guidance only and are not tested. note 1: dependant on ask detector time constant. 2: if bandwidth = 40 khz, ? f = +/- 15 khz, ber <= 3 x 10 -3 3: if bandwidth = 150 khz, ? f = +/- 50 khz, ber <= 3 x 10 -3 4: if bandwidth = 40 khz, ber <= 3 x 10 -3 5: if bandwidth = 150 khz, ber <= 3 x 10 -3 dc characteristics standard operating conditions (unless otherwise stated) operating temperature -40c t a +85c param no. sym characteristic min typ ? max units conditions v cc supply voltage 2.5 ? 5.5 v f rf < 900 mhz 3.3 ? 5.5 v f rf > 900 mhz i stby standby current 100 na enrx = 0 i cc supply current 6.0 7.5 9.0 ma lna gain = 1 7.5 9.2 11.0 ma lna gain = 0 v opa op amp input voltage offset -20 ? 20 mv i opa op amp input current offset -50 ? 50 na i bias op amp input bias current -100 100 na v rssi rssi voltage 0.5 1.0 1.5 v lna gain = 1 1.25 1.9 2.45 v lna gain = 0 ac characteristics standard operating condition s (unless otherwise stated) operating temperature -40c t a +85c param no. sym characteristic min typ ? max units conditions t fsk start-up time - fsk/fm 0.9 ms enrx = 0 to 1 t ask start-up time - ask r1xc1 + t fsk ms note 1 sensitivity - narrowband fsk -109 dbm note 2 sensitivity - wideband fsk -102 dbm note 3 sensitivity - narrowband ask -108 dbm note 4 sensitivity - wideband ask -104 dbm note 5 input rf level maximum fsk/ fm 0dbmlna gain = 1 input rf level maximum ask -10 dbm lna gain = 1
? 2003 microchip technology inc. preliminary ds70090a-page 25 rfrxd0420/0920 5.0 packaging information 5.1 package marking information legend: xx...x customer specific information* y year code (last digi t of calendar year) yy year code (last 2 digi ts of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code note : in the event the full microchip part num ber cannot be marked on one line, it will be carried over to the next line thus lim iting the number of available characters for customer specific information. * standard picmicro device marking consists of m icrochip part number, y ear code, week code, and traceability code. for picmicro de vice marking beyond this, certain price adders apply. please check with your microchip sales office. for qtp device s, any special marking adders are included in qtp price. 32-lead lqfp xxxxxxxxxxxx xxxxxxxxxxxx xxxxxxxxxxxx yywwnnn example rfrxd0420 02123abc
rfrxd0420/0920 ds70090a-page 26 preliminary ? 2003 microchip technology inc. 5.2 package details the following section gives the te chnical details of the package. 32-lead plastic low profile quad flat package (lq) 7 x 7 x 1.4 mm body not available at this time.
? 2003 microchip technology inc. preliminary ds70090a-page 27 rfrxd0420/0920 systems information and upgrade hot line the systems information and upgrade line provides system users a listing of th e latest versions of all of microchip's development systems software products. plus, this line provides in formation on how customers can receive the most curren t upgrade kits.the hot line numbers are: 1-800-755-2345 for u.s. an d most of canada, and 1-480-792-7302 for the rest of the world. on-line support microchip provides on-line support on the microchip world wide web site. the web site is used by microchip as a means to make files and information easily available to customers. to view the site, the user must have access to the internet and a web browser, such as netscape ? or microsoft ? internet explorer. files are also available for ftp download from our ftp site. connecting to the microchip internet web site the microchip web site is available at the following url: www.microchip.com the file transfer site is available by using an ftp service to connect to: ftp://ftp.microchip.com the web site and file transfer site provide a variety of services. users may downlo ad files for the latest development tools, data sheets, application notes, user's guides, articles an d sample programs. a vari- ety of microchip specific bu siness information is also available, including listings of microchip sales offices, distributors and factory r epresentatives. other data available for consideration is: latest microchip press releases technical support section with frequently asked questions design tips device errata job postings microchip consultant program member listing links to other useful web sites related to microchip products conferences for products, development systems, technical information and more listing of seminars and events 092002
rfrxd0420/0920 ds70090a-page 28 preliminary ? 2003 microchip technology inc. reader response it is our intention to provide yo u with the best documentation possible to en sure successful use of your microchip prod- uct. if you wish to provide your comm ents on organization, clarity, subject matt er, and ways in which our documentation can better serve you, please fax your comments to the technical publications manager at (480) 792-4150. please list the following information, and use this outline to provide us wi th your comments about this document. 1. what are the best features of this document? 2. how does this document meet your ha rdware and software development needs? 3. do you find the organization of this document easy to follow? if not, why? 4. what additions to the document do you th ink would enhance the structure and subject? 5. what deletions from the document could be made without affecting the overall usefulness? 6. is there any incorrect or mislead ing information (what and where)? 7. how would you improve this document? to : technical publications manager re: reader response total pages sent ________ from: name company address city / state / zip / country telephone: (_______) _________ - _________ application (optional): would you like a reply? y n device: literature number: questions: fax: (______) _ ________ - _________ ds70090a rfrxd0420/0920
? 2003 microchip technology inc. preliminary ds70090a-page29 rfrxd0420/0920 product identification system to order or obtain information, e.g., on pricing or deliver y, refer to the factory or the listed sales office. sales and support data sheets products supported by a preliminary data sheet may have an erra ta sheet describing minor operational differences and recom- mended workarounds. to determine if an errata sheet exists for a particular devic e, please contact one of the following: 1. your local microchip sales office 2. the microchip corporate literatu re center u.s. fax: (480) 792-7277 3. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon a nd data sheet (include literature #) you are using. new customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products. part no. x /xx xxx pattern package temperature range device device rfrxd0420-i/lq uhf ask/fsk/fm receiver rfrxd0920-i/lq uhf as k/fsk/fm receiver rfrxd0420t-i/lq uhf ask/fsk/fm receiver (tape & reel) rfrxd0920t-i/lq uhf ask/fsk/fm receiver (tape & reel) temperature range i = -40 c to +85 c package lq = lqfp32 pattern special requirements examples: a) rfrxd0420-i/lq = industrial temp, lqfp package b) rfrxd0920-i/lq = industrial temp, lqfp package
rfrxd0420/0920 ds70090a-page30 preliminary ? 2003 microchip technology inc. notes:
? 2003 microchip technology inc. preliminary ds70090a - page 31 information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. no representation or warranty is gi ven and no liability is assumed by microchip technology incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. use of microchip?s products as critical components in life support systems is not authorized except with express written approval by microchip. no licenses are conveyed, implicitly or otherwise, under any intellectual property rights. trademarks the microchip name and logo, the microchip logo, k ee l oq , mplab, pic, picmicro, picstart, pro mate and powersmart are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, micro id , mxdev, mxlab, picmaster, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. accuron, dspic, dspicdem.net, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, microport, migrat able memory, mpasm, mplib, mplink, mpsim, picc, pickit, picdem, picdem.net, powercal, powerinfo, powertool, rfpic, select mode, smartsensor, smartshunt, smarttel and total endurance are trademarks of microchip technology incorporated in the u.s.a. and other countries. serialized quick turn programming (sqtp) is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned her ein are property of their respective companies. ? 2003, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. microchip received qs-9000 quality system certification for its worldwide headquarters, design and wafer fabricat ion facilities in chandler and tempe, arizona in july 1999 and mountain view, california in march 2002. the company?s quality system processes and procedures are qs-9000 compliant for its picmicro ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeprom s, microperipherals, non-volatile memory and analog products. in addition, microchip?s qu ality system for the design and manufacture of development systems is iso 9001 certified. note the following details of the cod e protection feature on microchip devices: microchip products meet the specification contained in their particular microchip data sheet. microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal me thods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip products in a manner outsi de the operating specifications contained in microchip's data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconductor manufacturer can guarantee the security of thei r code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted wo rk, you may have a right to sue for relief under that act.
ds70090a-page 32 preliminary ? 2003 microchip technology inc. americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: 480-792-7627 web address: http://www.microchip.com rocky mountain 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7966 fax: 480-792-4338 atlanta 3780 mansell road, suite 130 alpharetta, ga 30022 tel: 770-640-0034 fax: 770-640-0307 boston 2 lan drive, suite 120 westford, ma 01886 tel: 978-692-3848 fax: 978-692-3821 chicago 333 pierce road, suite 180 itasca, il 60143 tel: 630-285-0071 fax: 630-285-0075 dallas 4570 westgrove drive, suite 160 addison, tx 75001 tel: 972-818-7423 fax: 972-818-2924 detroit tri-atria office building 32255 northwestern h ighway, suite 190 farmington hills, mi 48334 tel: 248-538-2250 fax: 248-538-2260 kokomo 2767 s. albright road kokomo, indiana 46902 tel: 765-864-8360 fax: 765-864-8387 los angeles 18201 von karman, suite 1090 irvine, ca 92612 tel: 949-263-1888 fax: 949-263-1338 san jose microchip technology inc. 2107 north first street, suite 590 san jose, ca 95131 tel: 408-436-7950 fax: 408-436-7955 toronto 6285 northam drive, suite 108 mississauga, ontario l4v 1x5, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific australia microchip technology australia pty ltd suite 22, 41 rawson street epping 2121, nsw australia tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing microchip technology consulting (shanghai) co., ltd., beijing liaison office unit 915 bei hai wan tai bldg. no. 6 chaoyangmen beidajie beijing, 100027, no. china tel: 86-10-85282100 fax: 86-10-85282104 china - chengdu microchip technology consulting (shanghai) co., ltd., chengdu liaison office rm. 2401-2402, 24th floor, ming xing financial tower no. 88 tidu street chengdu 610016, china tel: 86-28-86766200 fax: 86-28-86766599 china - fuzhou microchip technology consulting (shanghai) co., ltd., fuzhou liaison office unit 28f, world trade plaza no. 71 wusi road fuzhou 350001, china tel: 86-591-7503506 fax: 86-591-7503521 china - hong kong sar microchip technology hongkong ltd. unit 901-6, tower 2, metroplaza 223 hing fong road kwai fong, n.t., hong kong tel: 852-2401-1200 fax: 852-2401-3431 china - shanghai microchip technology consulting (shanghai) co., ltd. room 701, bldg. b far east international plaza no. 317 xian xia road shanghai, 200051 tel: 86-21-6275-5700 fax: 86-21-6275-5060 china - shenzhen microchip technology consulting (shanghai) co., ltd., shenzhen liaison office rm. 1812, 18/f, bui lding a, united plaza no. 5022 binhe road , futian district shenzhen 518033, china tel: 86-755-82901380 fax: 86-755-82966626 china - qingdao rm. b503, fullhope plaza, no. 12 hong kong central rd. qingdao 266071, china tel: 86-532-5027355 fax: 86-532-5027205 india microchip technology inc. india liaison office divyasree chambers 1 floor, wing a (a3/a4) no. 11, o?shaugnessey road bangalore, 560 025, india tel: 91-80-2290061 fax: 91-80-2290062 japan microchip technology japan k.k. benex s-1 6f 3-18-20, shinyokohama kohoku-ku, yokohama-shi kanagawa, 222-0033, japan tel: 81-45-471- 616 6 fax: 81-45-471-6122 korea microchip technology korea 168-1, youngbo bldg. 3 floor samsung-dong, kangnam-ku seoul, korea 135-882 tel: 82-2-554-7200 fax: 82-2-558-5934 singapore microchip technology singapore pte ltd. 200 middle road #07-02 prime centre singapore, 188980 tel: 65-6334-8870 fax: 65-6334-8850 taiwan microchip technology (barbados) inc., taiwan branch 11f-3, no. 207 tung hua north road taipei, 105, taiwan tel: 886-2-2717-7175 fax: 886-2-2545-0139 europe austria microchip technology austria gmbh durisolstrasse 2 a-4600 wels austria tel: 43-7242-2244-399 fax: 43-7242-2244-393 denmark microchip technology nordic aps regus business centre lautrup hoj 1-3 ballerup dk-2750 denmark tel: 45 4420 989 5 fax: 45 4420 9910 france microchip technology sarl parc d?activite du moulin de massy 43 rue du saule trapu batiment a - ler etage 91300 massy, france tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany microchip technology gmbh steinheilstrasse 10 d-85737 ismaning, germany tel: 49-89-627-144 0 fax: 49-89-627-144-44 italy microchip technology srl centro direzionale colleoni palazzo taurus 1 v. le colleoni 1 20041 agrate brianza milan, italy tel: 39-039-65791-1 fax: 39-039-6899883 united kingdom microchip ltd. 505 eskdale road winnersh triangle wokingham berkshire, england rg41 5tu tel: 44 118 921 5869 fax: 44-118 921-5820 12/05/02 w orldwide s ales and s ervice

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