1/10 january 2002 STP11NC40, STP11NC40fp n-channel 400v - 0.44 w - 9.5a to-220/to-220fp powermesh?ii power mosfet n typical r ds (on) = 0.44 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ?. the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor driver ordering information type v dss r ds(on) i d pw STP11NC40 STP11NC40fp 400 v 400 v < 0.55 w < 0.55 w 9.5 a 9.5 a(*) 120 w 30 w sales type marking package packaging STP11NC40 p11nc40 to-220 tube STP11NC40fp p11nc40fp to-220fp tube to-220 to-220fp 1 2 3 internal schematic diagram
STP11NC40, STP11NC40fp 2/10 absolute maximum ratings ( l ) pulse width limited by safe operating area (1) i sd 9.5a, di/dt 100a/s, v dd v (br)dss , t j t jmax. (*) limited only by maximum temperature allowed thermal data avalanche characteristics electrical characteristics (tcase =25c unless otherwise specified) on/off symbol parameter value unit STP11NC40 STP11NC40fp v ds drain-source voltage (v gs = 0) 400 v v dgr drain-gate voltage (r gs = 20 k w ) 400 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 9.5 9.5 (*) a i d drain current (continuos) at t c = 100c 6 6 (*) a i dm ( l ) drain current (pulsed) 38 38 (*) a p tot total dissipation at t c = 25c 120 30 w derating factor 0.96 0.24 w/c dv/dt (1) peak diode recovery voltage slope 3.5 v/ns v iso insulation withstand voltage (dc) - 2500 v t j t stg operating junction temperature storage temperature -55 to 150 -55 to 150 c c to-220 to-220fp rthj-case thermal resistance junction-case max 1.04 4.1 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 9.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 300 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 400 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 5 a 0.44 0.55 w
3/10 STP11NC40, STP11NC40fp electrical characteristics (tcase =25c unless otherwise specified) dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 5 a 8.6 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 995 172 25 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 200 v, i d = 5 a r g = 4.7 w v gs = 10 v (resistive load see, figure 3) 15 18 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 320v, i d = 10 a, v gs = 10v 32.5 6 15 45.5 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 320 v, i d = 5 a r g =4.7 w v gs = 10 v (resistive load see, figure 3) 43 15 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 320v, i d = 10 a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 7.5 14 23 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 9.5 38 a a v sd (1) forward on voltage i sd = 9.5 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9.5 a, di/dt = 100a/s v dd = 100v, t j = 150c (see test circuit, figure 5) 315 2100 13.6 ns nc a safe operating area for to-220fp safe operating area for to-220
STP11NC40, STP11NC40fp 4/10 output characteristics thermal impedance for to-220 static drain-source on resistance thermal impedance for to-220fp transfer characteristics transconductance
5/10 STP11NC40, STP11NC40fp normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature capacitance variations gate charge vs gate-source voltage normalized bvdss vs temperature
STP11NC40, STP11NC40fp 6/10 maximum avalanche energy vs temperature id vs temperature
7/10 STP11NC40, STP11NC40fp fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
STP11NC40, STP11NC40fp 8/10 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
9/10 STP11NC40, STP11NC40fp l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
STP11NC40, STP11NC40fp 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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