a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1202 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c none symbol test conditions minimum typical maximum units bv ceo i c = 5.0 ma 10 v bv cer i c = 1.0 ma r be = 100 ? 18 v bv cbo i c = 1.0 ma 20 v i ceo v ce = 5.0 v 1.0 ma i ces v ce = 10 v 100 a i ebo v eb = 3.0 v 1.0 ma h fe v ce = 5.0 v i c = 100 ma i c = 300 ma 40 --- f t v ce = 5.0 v i c = 300 ma f = 100 mhz 1.0 2.0 ghz c ob v cb = 5.0 v f = 1.0 mhz 4.0 pf npn silicon high frequency transistor bft51f.a description: the asi bft51f.a is designed for high frequency amplifier applications. maximum ratings i c 500 ma v ce 20 v p diss 3.0 w @ t c = 25 o c t j -65 o c to +175 o c t stg -65 o c to +175 o c jc 50 o c/w package style to- 126
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