document number 7777 issue 1 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk 2N6660CSM4 n?channel enhancement mode mos transistor features ? switching regulators ? converters ? motor drivers ? jan level screening options ? cecc screening options ? space quality level options v ds drain ? source voltage v gs gate ? source voltage i d drain current @ t case = 25c i d drain current @ t case = 100c i dm pulsed drain current * p d power dissipation @ t case = 25c p d power dissipation @ t case = 100c t j operating junction temperature range t stg storage temperature range t l lead temperature ( from case for 10 sec.) 60v 40v 1.1a 0.8a 3a 6.25w 2.5w ?55 to 150c ?55 to 150c 300c mechanical data dimensions in mm (inches) absolute maximum ratings (t case = 25c unless otherwise stated) underside view lcc3 package (mo-041ba) pin 1 ? drain pin 2 ? n/c pin 3 ? source pin 4 ? gate 1 2 3 4 5.59 0.13 (0.22 0.005) 0.23 (0.009) rad. 1.02 0.20 (0.04 0.008) 2.03 0.20 (0.08 0.008) 1.40 0.15 (0.055 0.006) 0.25 0.03 (0.01 0.001) 0.23 (0.009) min. 1.27 0.05 (0.05 0.002) 3.81 0.13 (0.15 0.005) 0.64 0.08 (0.025 0.003) 1 ? 16 * pulse width limited by maximum junction temperature
document number 7777 issue 1 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk 2N6660CSM4 electrical characteristics (t case = 25c unless otherwise stated) v gs = 0v i d = 10 a v ds = v gs i d = 1.0ma v gs = 15v v ds = 0v t case = 125c v ds = 60v v gs = 0v v ds = 48v v gs = 0v t case = 125c v ds =>2v v gs = 10v v gs = 5v i d = 0.3a v gs = 10v i d = 1.0a t case = 125c v gs = 5v i d = 0.3a v gs = 10v i d = 1a v ds = 25v i d = 0.5a v ds = 25v v gs = 0v f = 1mhz v dd = 25v i d = 1.0a r l = 23 r g = 25 modified mospower symbol showing the integral pn juncion rectifier i s = -1.1a v gs = 0v t case = 125c v (br)dss drain ? source breakdown voltage v gs(th) gate threshold voltage i gss gate ? body leakage current i dss zero gate voltage drain current i d(on)* on?state drain current r ds(on)* drain ? source on resistance v ds(on)* drain ? source on voltage g fs* forward transconductance c iss input capacitance c oss output capacitance c rss reverse transfer capacitance t on turn?on time t off turn?off time i s continuous source current (body diode) i sm source current 1 (body diode) v sd diode forward voltage 1 60 100 0.8 1.5 2 100 500 10 500 1.5 1.7 4.7 5 2.7 3 3.9 4.2 1.4 1.5 2.7 3 170 195 35 50 33 40 210 810 810 -1.1 -3 -0.9 v na a a v ms pf ns a v * pulse test: t p 80 s , ? 1% parameter min. typ. max. unit r ja thermal resistance, junction to ambient 210 c /w r jc thermal resistance, junction to case 20 c /w parameter test conditions min. typ. max. unit dynamic characteristics switching characteristics body-drain diode characteristics static characteristics
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