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| industrial & multimarket data sheet 2.0, 2011-03-18 final optimos? BSB013NE2LXI n-channel power mosfet
optimos? power-mosfet BSB013NE2LXI final data sheet 1 2.0, 2011-03-18 1 description optimos?25v products are class leading power mosfets for highest power density and energy efficient solutions. ult ra low gate and output charges together with lowest on state resistance in small footprint packages make optimos? 25v the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applicati ons. super fast switching control fets together with low emi sync fets provide solutions that are easy to design in. optimos? products are available in high performance packages to tackle your most challenging applic ations giving full flexibility in optimizing space, efficiency and cost. optimos? products are designed to meet and exceed the energy efficiency and power density requiremen ts of the sharpened next generation voltage regulation standards in computing applications. features ? optimized syncfet for high performance buck converters ? 100% avalanche tested ? qualified according to jedec 1) for target applications ? integrated monolithic schottky like diode ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 ? double.sided cooling ? compatible with directfet? pa ckage mx footprint and outline 2) ?100% rg tested ? low profile (<0.7 mm) applications ? on board power for server ? power managment for high performance computing ? synchronous rectification ? high power density point of load converters 1) j-std20 and jesd22 2) canpak uses directfet ? technology licensed from internat ional rectifier corporation. directfet ? is a registered trademark of international rectifier corporation. table 1 key performance parameters parameter value unit related links v ds 25 v ifx optimos webpage r ds(on),max 1.3 m ifx optimos product brief i d 163 a ifx optimos spice models q oss 39 nc ifx design tools q g . typ 62 type package marking BSB013NE2LXI mg-wdson-2 02e2 optimos? power-mosfet BSB013NE2LXI final data sheet 2 2.0, 2011-03-18 2 maximum ratings at t j = 25 c, unless otherwise specified. 3 thermal characteristics table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current i d --163 a v gs =10 v, t c =25 c --103 v gs =10 v, t c =100 c --36 v gs =10 v, t a =25 c, r thja =45 k/w) 1) 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70, thick) copper area for drain conneciton. pcb is vertical in still air pulsed drain current 2) 2) see figure 3 for more detailed information i d,pulse --400 t c =25 c avalanche current, single pulse 3) 3) see figure 13 for mo re detailed information i as --40 avalanche energy, single pulse e as --130 mj i d =40 a, r gs =25 gate source voltage v gs -20 - 20 v power dissipation p tot --57 w t c =25 c --2.8 t a =25 c, r thja =45 k/w operating and storage temperature t j , t stg -40 - 150 c iec climatic category; din iec 68-1 - table 3 thermal characteristics parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - 1.0 - k/w bottom -- 2.2 top device on pcb r thja -- 45 6 cm 2 cooling area 1) 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (o ne layer, 70, thick) copper area for drain conneciton. pcb is vertical in still air. optimos? power-mosfet BSB013NE2LXI electrical characteristics final data sheet 3 2.0, 2011-03-18 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified. table 4 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 25 - - v v gs =0 v, i d =10 ma breakdown voltage temperature coefficien dv (br)dss /dt j -15- mv/k i d =10 ma, reference to 25c gate threshold voltage v gs(th) 1- 2.2 v ds = v gs , i d =250 a zero gate voltage drain current i dss - 25 500 a v ds =20 v, v gs =0 v, t j =25 c -4- ma v ds =20 v, v gs =0 v, t j =125 c gate-source leakage current i gss - 10 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) -1.41.8m v gs =4.5 v, i d =30a -1.11.3 v gs =10 v, i d =30 a gate resistance r g -0.6- transconductance g fs 85 170 - s | v ds |>2| i d | rds(on)max , i d =30 a table 5 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss -4400- pf v gs =0 v, v ds =12 v, f =1 mhz output capacitance c oss -1900- reverse transfer capacitance c rss -190- turn-on delay time t d(on) -5.4- ns v dd =12v, v gs =10 v, i d =30 a, r g =1.6 rise time t r -6.4- turn-off delay time t d(off) -32- fall time t f -4.8- optimos? power-mosfet BSB013NE2LXI electrical characteristics final data sheet 4 2.0, 2011-03-18 table 6 gate charge characteristics 1) 1) see figure 16 for gate charge parameter definition parameter symbol values unit note / test condition min. typ. max. gate to source charge q gs -10.5- nc v dd =12 v, i d =30 a, v gs =0 to 4.5 v gate charge at threshold q g(th) -7.1- gate to drain charge q gd -7.3- switching charge q sw -10.7- gate charge total q g -30- gate plateau voltage v plateau -2.4- v gate charge total q g -62- nc v dd =12 v, i d =30 a, v gs =0 to 10v gate charge total, sync. fet q g(sync) -26- v ds =0.1 v, v gs =0 to 4.5 v output charge q oss -39- v dd =12 v, v gs =0 v table 7 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode continuous forward current i s -- 57a t c =25 c diode pulse current i s,pulse -- 228 diode forward voltage v sd -0.550.7v v gs =0 v, i f =12 a, t j =25 c reverse reco very charge q rr -5- nc v r =15 v, i f = i s , d i f /d t =400 a/s optimos? power-mosfet BSB013NE2LXI electrical characteristics diagrams final data sheet 5 2.0, 2011-03-18 5 electrical characteristics diagrams table 8 1 power dissipation 2 drain current p tot = f( t c ) i d =f(t c ); parameter :v gs table 9 3 safe operating area t c =25 c 4 max. transient thermal impedance i d =f( v ds ); t j =25 c; d=0; parameter: t p z (thjc) =f( t p ); parameter: d= t p / t optimos? power-mosfet BSB013NE2LXI electrical characteristics diagrams final data sheet 6 2.0, 2011-03-18 table 10 5 typ. output characteristics t c =25 c 6 typ. drain-source on-state resistance i d =f( v ds ); t j =25 c; parameter: v gs r ds(on) =f( i d ); t j =25 c; parameter: v gs table 11 7 typ. transfer characteristics 8 typ. forward transconductance i d =f(vgs); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c optimos? power-mosfet BSB013NE2LXI electrical characteristics diagrams final data sheet 7 2.0, 2011-03-18 table 12 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =10 ma table 13 11 typ. capacitances 12 forward characteristics of reverse diode c=f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ); parameter: t j optimos? power-mosfet BSB013NE2LXI electrical characteristics diagrams final data sheet 8 2.0, 2011-03-18 table 14 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ; parameter: t j(start) v gs =f( q gate ); i d =30 a pulsed; parameter: v dd table 15 15 typ drain-source leakage current 16 gate charge waveforms i dss =f( v ds ); v gs =0 v optimos? power-mosfet BSB013NE2LXI package outlines final data sheet 9 2.0, 2011-03-18 6 package outlines figure 1 outlines mg-wdson-2, dimensions in mm/inches optimos? power-mosfet BSB013NE2LXI package outlines final data sheet 10 2.0, 2011-03-18 7 package outlines figure 2 outlines mg-wdson-2, dimensions in mm/inches optimos? power-mosfet BSB013NE2LXI package outlines final data sheet 11 2.0, 2011-03-18 8 package outlines figure 3 outlines mg-wdson-2, dimensions in mm/inches optimos? power-mosfet BSB013NE2LXI revision history final data sheet 12 2.0, 2011-03-18 9 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2011-03-18 published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. with respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including wit hout limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for in formation on the types in question, please contact the neares t infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applicat ions or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protec t human life. if they fail, it is reason able to assume that the health of the user or other persons may be endangered. revision history: 2011-03-18, 2.0 previous revision: revision subjects (major ch anges since last revision) 0.1 release of target data sheet 2.0 release final version |
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