e b c ds30054 rev. 9 - 2 1 of 3 mmbta55 / mmbta56 www.diodes.com diodes incorporated mmbta55 / mmbta56 pnp small signal surface mount transistor epitaxial planar die construction complementary npn types available (mmbta05 / mmbta06) ideal for medium power amplification and switching lead free/rohs compliant (note 3) qualified to aec-q101 standards for high reliability characteristic symbol mmbta55 mmbta56 unit collector-base voltage v cbo -60 -80 v collector-emitter voltage v ceo -60 -80 v emitter-base voltage v ebo -4.0 v collector current - continuous (note 1) i c -500 ma power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient (note 1) r ja 417 c/w operating and storage and temperature range t j ,t stg -55 to +150 c maximum ratings @ t a = 25 c unless otherwise specified a e j l top view m b c c b e h g d k mechanical data case: sot-23 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: solderable per mil-std-202, method 208 lead free plating (matte tin finish annealed over alloy 42 leadframe). mmbta55 marking (see page 2): k2h mmbta56 marking (see page 2): k2g ordering & date code information: see page 2 weight: 0.008 grams (approximate) electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage mmbta55 mmbta56 v (br)cbo -60 -80 v i c = -100 a, i e = 0 collector-emitter breakdown voltage mmbta55 mmbta56 v (br)ceo -60 -80 v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -4.0 v i e = -100 a, i c = 0 collector cutoff current mmbta55 mmbta56 i cbo -100 na v cb = -60v, i e = 0 v cb = -80v, i e = 0 collector cutoff current mmbta55 mmbta56 i cex -100 na v ce = -60v, i bo = 0v v ce = -80v, i bo = 0v on characteristics (note 2) dc current gain h fe 100 i c = -10ma, v ce = -1.0v i c = -100ma, v ce = -1.0v collector-emitter saturation voltage v ce(sat) -0.25 v i c = -100ma, i b = -10ma base-emitter saturation voltage v be(sat) -1.2 v i c = -100ma, v ce = -1.0v small signal characteristics current gain-bandwidth product f t 50 mhz v ce = -1.0v, i c = -100ma, f = 100mhz sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad la yout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. short duration test pulse used to minimize self-heating effect. 3. no purposefully added lead. features lead-free
ds30054 rev. 9 - 2 2 of 3 mmbta55 / mmbta56 www.diodes.com month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key k2x = product type marking code, ex: k2h = mmbta55 ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september k2x ym marking information notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping MMBTA55-7-F mmbta56-7-f sot-23 3000/tape & reel ordering information (note 4) year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) fig. 1, max power dissipation vs ambient tem p erature a 150 200 250 300 350 0 0 0.05 0.10 0.15 0.20 0 . 2 5 110 100 1000 v , collector to emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 2, collector emitter saturation voltage vs. collector current c i c i b =10 t = -50c a t = 25c a t = 150c a
ds30054 rev. 9 - 2 3 of 3 mmbta55 / mmbta56 www.diodes.com 1 0.1 0.1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) fi g . 4 base emitter volta g e vs. collector current c 0.2 0.3 0.4 0.6 0.5 0.8 0.7 0.9 1 . 0 v=5v ce t = 25c a t = -50c a t = 150c a 10 1000 100 1 10 1000 100 h , dc current gain (normalized) fe i , collector current (ma) fig. 3, dc current gain vs collector current c t = -50c a t = 25c a t = 150c a v=5v ce 1 10 100 1 10 100 i , collector current (ma) fi g . 5 gain bandwidth product vs. collector current c f , gain bandwidth product (mhz) t v=5v ce important notice life support www.diodes.com diodes, inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. diodes, inc. does not assume any liability arising out of the application or use of any product described herei n; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. the products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of diodes incorporated.
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