semiconductors summary n-channel v (br)dss = 60v; r ds(on) = 0.300 ;i d = 1.8a p-channel v (br)dss = -60v; r ds(on) = 0.425 ;i d = -1.5a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on - resistance ? fast switching speed ? low threshold ? low gate drive ? low profile soic package applications ? motor drive device marking ? zxmh c6a07 zxmhc6a07t8 provisional issue e - march 2004 1 complementary 60v enhancement mode mosfet h-bridge device reel size tape width quantity per reel zxmhc6a07t8ta 7 ?? 12mm 1000 units zxmhc6a07t8tc 13?? 12mm 4000 units ordering information g 2 d, 1 d 2 d, 3 d 4 g 3 s 2 s 3 s 1 s 4 g 1 g 4 pinout diagram sm8 top view
zxmhc6a07t8 provisional issue e - march 2004 2 semiconductors parameter symbol v alue unit junction to ambient (a)(d) r ja 96 c/w junction to ambient (b)(d) r ja 73 c/w thermal resistance notes (a) for a device surface mounted on 50mm x 50mm fr4 pcb with high coverage of single sided 2oz copper, in still air conditions. (b) for a device surface mounted on fr4 pcb measured 1.6mm at t 10sec. (c) repetitive rating - 50mm x 50mm x 1.6mm fr4 pcb, d = 0.2, pulse width 300 s pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. (d) for device with one active die. parameter symbol n-channel p-channel unit drain-source voltage v dss 60 -60 v gate-source voltage v gs 20 20 v continuous drain current@v gs =10v; t a =25 c (b)(d) @v gs =10v; t a =70 c (b)(d) @v gs =10v; t a =25 c (a)(d) i d 1.8 1.4 1.6 -1.5 -1.2 -1.3 a a pulsed drain current (c) i dm 8.7 -7.5 a continuous source current (body diode) (b) i s 2.3 -2.1 a pulsed source current (body diode) (c) i sm 8.7 -7.5 a power dissipation at ta=25c (a)(d) linear derating factor p d 1.3 10.4 w mw/c power dissipation at ta=25c (b)(d) linear derating factor p d 1.7 13.6 w mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings.
zxmhc6a07t8 provisional issue e - march 2004 3 semiconductors typical characteristics
zxmhc6a07t8 provisional issue e - march 2004 semiconductors 4 parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 60 v i d =250a, v gs =0v zero gate voltage drain current i dss 1av ds =60v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) 1 3.0 v i d =250a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.300 0.450 ? ? v gs =10v, i d =1.8a v gs =4.5v, i d =1.3a forward transconductance (1)(3) g fs 2.3 s v ds =15v,i d =1.8a dynamic (3) input capacitance c iss 166 pf v ds =40v, v gs =0v, f=1mhz output capacitance c oss 19.5 pf reverse transfer capacitance c rss 8.7 pf switching (2) (3) turn-on delay time t d(on) 1.8 ns v dd =30v, i d =1.8a r g ? 6.0 ? ,v gs =10v rise time t r 1.4 ns turn-off delay time t d(off) 4.9 ns fall time t f 2.0 ns gate charge q g 1.65 nc v ds =30v,v gs =5v, i d =1.8a total gate charge q g 3.2 nc v ds =30v,v gs =10v, i d =1.8a gate-source charge q gs 0.67 nc gate-drain charge q gd 0.82 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =0.45a, v gs =0v reverse recovery time (3) t rr 20.5 ns t j =25c, i f =1.8a, di/dt= 100a/s reverse recovery charge (3) q rr 21.3 nc n-channel electrical characteristics (at t amb = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
zxmhc6a07t8 provisional issue e - march 2004 5 semiconductors parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss -60 v i d =-250a, v gs =0v zero gate voltage drain current i dss -1 av ds =-60v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 v i d =-250a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.425 0.630 ? ? v gs =-10v, i d =-0.9a v gs =-4.5v, i d =-0.8a forward transconductance (1)(3) g fs 1.8 s v ds =-15v,i d =-0.9a dynamic (3) input capacitance c iss 233 pf v ds =-30 v, v gs =0v, f=1mhz output capacitance c oss 17.4 pf reverse transfer capacitance c rss 9.6 pf switching (2) (3) turn-on delay time t d(on) 1.3 ns v dd =-30v, i d =-1a r g ? 6.0 ? ,v gs =-10v rise time t r 21.3 ns turn-off delay time t d(off) 5.3 ns fall time t f 11.6 ns gate charge q g 2.4 nc v ds =-30v,v gs =-5v, i d =-0.9a total gate charge q g 5.1 nc v ds =-30v,v gs =-10v, i d =-0.9a gate-source charge q gs 0.7 nc gate-drain charge q gd 0.7 nc source-drain diode diode forward voltage (1) v sd -0.85 -0.95 v t j =25c, i s =-0.8a, v gs =0v reverse recovery time (3) t rr 22.6 ns t j =25c, i f =-0.9a, di/dt= 100a/s reverse recovery charge (3) q rr 23.2 nc p-channel electrical characteristics (at t amb = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
zxmhc6a07t8 provisional issue e - march 2004 6 semiconductors n-channel typical characteristics
zxmhc6a07t8 provisional issue e - march 2004 7 semiconductors n-channel typical characteristics
zxmhc6a07t8 provisional issue e - march 2004 8 semiconductors p-channel typical characteristics
zxmhc6a07t8 provisional issue e - march 2004 9 semiconductors p-channel typical characteristics
zxmhc6a07t8 provisional issue e - march 2004 10 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquaters zetex plc fields new road, chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2004 sczxmhc6a07t8dse semiconductors dim millimetres inches min typ max min typ max a ? ? 1.7 ? ? 0.067 a1 0.02 ? 0.1 0.0008 ? 0.004 b ? 0.7 ? ? 0.028 ? c 0.24 ? 0.32 0.009 ? 0.013 d 6.3 ? 6.7 0.248 ? 0.264 e 3.3 ? 3.7 0.130 ? 0.145 e1 ? 4.59 ? ? 0.180 ? e2 ? 1.53 ? ? 0.060 ? he 6.7 ? 7.3 0.264 ? 0.287 lp 0.9 ? ? 0.035 ? ? ? ? 15 ? ? 15 ? 10 ? ? 10 ?
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