? 2010 ixys corporation, all rights reserved ds100256(03/10) ixfh52n50p2 IXFT52N50P2 polarp2 tm hiperfet tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 52 a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c52 a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss , t j 150c 15 v/ns p d t c = 25 c 960 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-247 6 g to-268 4 g v dss = 500v i d25 = 52a r ds(on) 120m advance technical information features z international standard packages z fast intrinsic rectifier z avalanche rated z low r ds(on) and q g z low package inductance advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 4ma 2.5 4.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 15 a t j = 125 c 1.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 120 m g = gate d = drain s = source tab = drain to-268 (ixft) s g d (tab) to-247 (ixfh) g s d (tab) d
ixys reserves the right to change limits, test conditions, and dimensions. ixfh52n50p2 IXFT52N50P2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 outline terminals: 1 - gate 2 - drain 3 - source 4 - drain symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 30 48 s c iss 6800 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 695 pf c rss 76 pf t d(on) 22 ns t r 10 ns t d(off) 46 ns t f 8 ns q g(on) 113 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 30 nc q gd 43 nc r thjc 0.13 c/w r thcs 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 52 a i sm repetitive, pulse width limited by t jm 208 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 250 ns i rm 14 a q rm 1.27 c i f = 26a, -di/dt = 100a/ s v r = 85v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external)
? 2010 ixys corporation, all rights reserved ixfh52n50p2 IXFT52N50P2 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0123456 v ds - volts i d - amperes v gs = 10v 7v 6 v 5 v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 5 v 6 v 7 v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 40 45 50 55 0246810121416 v ds - volts i d - amperes 4 v 5v 6v v gs = 10v 7v fig. 4. r ds(on) normalized to i d = 26a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 52a i d = 26a fig. 5. r ds(on) normalized to i d = 26a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 10 20 30 40 50 60 70 80 90 100 110 120 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 55 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfh52n50p2 IXFT52N50P2 ixys ref: f_52n50p2(8j-n45)03-22-10 fig. 13. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 12. maximum transient thermal impedance 0.30 fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 3.03.54.04.55.05.56.06.57.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 102030405060708090 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110120 q g - nanocoulombs v gs - volts v ds = 250v i d = 26a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss
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