2N6794LCC4 document number 2947 issue 2 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v gs gate ? source voltage i d continuous drain current (v gs = 10v , t case = 25c) i d continuous drain current (v gs = 10v , t case = 100c) i dm pulsed drain current 1 p d power dissipation @ t case = 25c linear derating factor e as single pulse avalanche energy 2 dv/dt peak diode recovery 3 t j , t stg operating and storage temperature range r jc thermal resistance junction to case r jca thermal resistance junction-to-ambient 20v 1.5a 1a 6.5a 20w 0.16w/c 0.11mj 3.5v/ns -55 to +150c 6.25c/w 175c/w mechanical data dimensions in mm (inches) n?channel power mosfet absolute maximum ratings (t case = 25c unless otherwise stated) features hermetically sealed dynamic dv/dt rating avalanche energy rating simple drive requirements notes 1) pulse test: pulse width 300 s, ? 2% 2) @ v dd = 50v , l 570 h , r g = 25 ? , peak i l = 14a , starting t j = 25c 3) @ i sd 14a , di/dt 140a/ s , v dd bv dss , t j 150c , suggested r g = 7.5 ? v dss 500v i d(cont) 1.5a r ds(on) 3.0 ? ? lcc4 ceramic surface mount package underside view pads 6, 7, 8, 9, 10, 11, 12, 13. source pads 4,5 gate pads 1,2,15,16,17,18 drain pads 3,14 not connected 1.39 (0.055) 1.15 (0.045) 0.76 (0.030) 0.51 (0.020) 1.39 (0.055) 1.02 (0.040) 15 16 13 12 14 3 4 5 6 7 17 18 1 2 11 10 8 9 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) 2.16 (0.085) 7.62 (0.300) 7.12 (0.280) 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) 0.08 (0.003) 0.43 (0.017) 0.18 (0.007 rad. rad.
2N6794LCC4 document number 2947 issue 2 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. parameter test conditions min. typ. max. unit v gs = 0 i d = 1ma reference to 25c i d = 1ma v gs = 10v i d = 1a v gs = 10v i d = 1.5a v ds = v gs i d = 250 a v ds 15v i ds = 1a v gs = 0 v ds = 0.8bv dss t j = 125c v gs = 20v v gs = ?20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v i d = 1.5a v ds = 0.5bv ds i d =1.5a v ds = 0.5bv ds v dd = 250v i d = 1.5a r g = 7.5 ? i s = 1.5a t j = 25c v gs = 0 i f = 1.5a t j = 25c d i / d t 100a/ sv dd 50v electrical characteristics (t amb = 25c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on?state resistance gate threshold voltage forward transconductance zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain (?miller?) charge turn?on delay time rise time turn?off delay time fall time continuous source current pulse source current 2 diode forward voltage reverse recovery time reverse recovery charge forward turn?on time 500 0.43 3 3.45 24 1 25 250 100 ?100 350 80 35 7.3 16.7 0.1 3 3.7 8.7 40 30 60 30 1.5 6.5 1.2 900 5.9 negligible 5.0 15.0 v v/c ? v s ( ? a na pf nc nc ns a v ns c nh bv dss ? bv dss ? t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr t on l d l s static electrical ratings notes 1) pulse test: pulse width 300 s, ? 2% 2) repetitive rating ? pulse width limited by maximum junction temperature. dynamic characteristics source ? drain diode characteristics internal drain inductance (from centre of drain pad to die) internal source inductance (from centre of source pad to end of source bond wire) package characteristics ( ? )
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