a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/2 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv cbo i c = 15 ma 48 v bv cer i c = 15 ma r be = 10 ? 48 v bv ebo i e = 1.5 ma 3.5 v i ces v ce = 28 v v be = 28 v 1.5 ma h fe v ce = 5.0 v i c = 1.0 a 30 300 --- npn silicon rf power transistor AM81214-015 description: the asi AM81214-015 is an npn silicon bipolar transistor designed for l-band pulsed radar applications. it utilizes internal matching and gold metalization for high reliability and good vswr capability. features: ? 1.2 to 1.4 ghz operation ? internal input/output matching network ? p g = 8.5 db at 14.5 w/1400 mhz ? omnigold ? metalization system ? 5:1 vswr capability rated at conditions maximum ratings i c 1.8 a v cc 32 v p diss 37.5 w @ t c = 25 c t j -65 c to +250 c t stg -65 c to +200 c jc 4.0 c/w package style .250 2l flg common base
a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 2/2 error! reference source not found. specifications are subjec t to change without notice. AM81214-015 characteristics t c = 25 c symbol none test conditions minimum typical maximum units p g c v cc = 28 v p out = 15 w f = 1.2 to 1.4 ghz p in = 2.0 w 8.5 48 db % pulse width = 1000 sec, duty cycle = 10% impedance data freq z in ( ? ) z cl ( ? ) 1.2 ghz 3.0 + j6.5 16 + j3.0 1.3 ghz 3.5 + j7.5 13 + j6.0 1.4 ghz 5.0 + j7.0 11 + j5.0
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