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MRF377HR3 1 rf device data freescale semiconductor rf power field - effect transistor n - channel enhancement - mode lateral mosfet designed for broadband commercial and industrial applications with frequen- cies from 470 to 860 mhz. the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 32 volt digital television transmitter equipment. ? typical broadband dvbt ofdm performance @ 470 - 860 mhz, 32 volts, i dq = 2000 ma, 8k mode, 64 qam output power ? 45 watts avg. power gain 16.7 db drain efficiency 21% acpr - 58 dbc ? typical broadband atsc 8vsb performance @ 470 - 860 mhz, 32 volts, i dq = 2000 ma output power ? 80 watts avg. power gain 16.5 db drain efficiency 27.5% imd - 31.3 dbc ? capable of handling 10:1 vswr, @ 32 vdc, 860 mhz, 45 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? device designed for push - pull operation only ? integrated esd protection ? excellent thermal stability ? lower thermal resistance package ? low gold plating thickness on leads, 40 nominal. ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc drain current - continuous i d 17 adc total device dissipation @ t c = 25 c derate above 25 c p d 648 3.7 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c cw operation @ t c = 25 c derate above 25 c cw 235 1.38 w w/ c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 81 c, 105 w cw case temperature 77 c, 45 w cw r jc 0.27 0.29 c/w 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf. select documentation/application notes - an1955. document number: mrf377h rev. 2, 3/2009 freescale semiconductor technical data 470 - 860 mhz, 45 w avg., 32 v lateral n - channel rf power mosfet case 375g - 04, style 1 ni - 860c3 MRF377HR3 ? freescale semiconductor, inc., 2006, 2009. all rights reserved.
2 rf device data freescale semiconductor MRF377HR3 table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model 7 (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain - source breakdown voltage (4) (v gs = 0 vdc, i d =10 a) v (br)dss 65 ? ? vdc zero gate voltage drain current (4) (v ds = 32 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc gate threshold voltage (v ds = 10 vdc, i d = 200 a) v gs(th) ? 2.8 ? vdc on characteristics gate quiescent voltage (3) (v ds = 32 vdc, i d = 2000 madc) v gs(q) 2.5 3.5 4.5 vdc drain - source on - voltage (1) (v gs = 10 vdc, i d = 3 a) v ds(on) ? 0.27 ? vdc dynamic characteristics (1,2) reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 3.2 ? pf functional tests (3) (in dvbt ofdm single - channel, narrowband fixture, 50 ohm system) common source power gain (v dd = 32 vdc, p out = 45 w avg., i dq = 2000 ma, f = 860 mhz) g ps 16.5 18.2 ? db drain efficiency (v dd = 32 vdc, p out = 45 w avg., i dq = 2000 ma, f = 860 mhz) d 21 22.9 ? % adjacent channel power ratio (v dd = 32 vdc, p out = 45 w avg., i dq = 2000 ma, f = 860 mhz) acpr ? - 59.2 -57 dbc typical performances (3) (in dvbt ofdm single - channel, broadband fixture, 50 ohm system) common source power gain (v dd = 32 vdc, p out = 45 w avg., i dq = 2000 ma) f = 470 mhz f = 560 mhz f = 660 mhz f = 760 mhz f = 860 mhz g ps ? ? ? ? ? 17.6 17.6 17.4 17.4 16.8 ? ? ? ? ? db 1. each side of device measured separately. 2. part is internally matched both on input and output. 3. measurement made with device in push - pull configuration. 4. drains are tied together internally as this is a total device value. (continued)
MRF377HR3 3 rf device data freescale semiconductor table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit drain efficiency (v dd = 32 vdc, p out = 45 w avg., i dq = 2000 ma) f = 470 mhz f = 560 mhz f = 660 mhz f = 760 mhz f = 860 mhz d ? ? ? ? ? 23.5 25.8 23.0 22.7 21.3 ? ? ? ? ? % adjacent channel power ratio (v dd = 32 vdc, p out = 45 w avg., i dq = 2000 ma) f = 470 mhz f = 560 mhz f = 660 mhz f = 760 mhz f = 860 mhz acpr ? ? ? ? ? - 59.3 - 59.3 - 58.7 - 58.7 - 58.1 ? ? ? ? ? dbc typical performances (1) (in atsc 8vsb single - channel, broadband fixture, 50 ohm system) common source power gain (v dd = 32 vdc, p out = 80 w avg., i dq = 2000 ma) f = 470 mhz f = 560 mhz f = 660 mhz f = 760 mhz f = 860 mhz g ps ? ? ? ? ? 17.5 17.5 17.2 17.2 16.6 ? ? ? ? ? db drain efficiency (v dd = 32 vdc, p out = 80 w avg., i dq = 2000 ma) f = 470 mhz f = 560 mhz f = 660 mhz f = 760 mhz f = 860 mhz d ? ? ? ? ? 31.0 34.3 30.1 29.6 27.8 ? ? ? ? ? % intermodulation distortion (v dd = 32 vdc, p out = 80 w avg., i dq = 2000 ma) f = 470 mhz f = 560 mhz f = 660 mhz f = 760 mhz f = 860 mhz imd ? ? ? ? ? 31.7 32.7 32.9 34.2 35.4 ? ? ? ? ? dbc 1. measurement made with device in push - pull configuration.
4 rf device data freescale semiconductor MRF377HR3 table 5. 845 - 875 mhz narrowband test circuit component designations and values part description part number manufacturer b1, b2 ferrite beads, surface mount, 11 (0805) 2508051107y0 fair - rite balun 1, balun 2 0.8 - 1ghz xinger balun 3a412 anaran c1 33 pf chip capacitor (0805) 08055j330jbs avx c2 2.7 pf chip capacitor (0603) 06035j2r7bbs avx c3 12 pf chip capacitor (0805) 08051j120gbs avx c4, c5 6.8 pf chip capacitors (0805) 08051j6r8bbs avx c6 2.7 pf chip capacitor (0805) 0805j2r7bbs avx c7, c8, c9, c10 3.3 pf chip capacitors (0805) 08051j3r3bbs avx c11, c12 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c13, c14, c15, c16 0.01 f, 100 v chip capacitors c1825c103j1gac kemet c17, c18 0.56 f, 50 v chip capacitors c1825c564j5rac kemet c19, c20 10 f, 50 v tantalum chip capacitors t491d106k050at kemet c21, c22, c23, c24 47 f, 16 v tantalum chip capacitors t491d476k016at kemet c25, c26 470 f, 63 v electrolytic capacitors emvy630gtr471mmh0s nippon chemi - con l1 12 nh inductor (0603) 0603hc- 12nxjb coilcraft l2 7.15 nh inductor 1606 - 7 coilcraft l3, l4 10 nh inductors (0603) 0603hc- 10nxjb coilcraft r1, r2 24 , 1/4 w, chip resistors crcw120624r0fkea vishay c10 c9 r1 c2 l1 c21 c22 c14 balun 1 c3 wb2 wb1 l3 v gg b1 b2 c11 c1 r2 l4 v gg c24 c23 c12 c13 c15 c26 c18 balun 2 c4 c5 c6 wb4 wb3 c25 v dd c16 c20 c17 l2 c8 c7 figure 1. 845 - 875 mhz narrowband test circuit component layout mrf377 gate mrf377 drain c19 v dd ds1152?a rev 0 ds1152?b rev 0 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
MRF377HR3 5 rf device data freescale semiconductor typical narrowband characteristics 2200 ma 100 16 19 10 g ps p out , output power (watts) pep figure 2. two - tone power gain versus output power g ps , power gain (db) v dd = 32 vdc i dq = 2000 ma f1 = 859.95 mhz, f2 = 860.05 mhz 18.5 18 17.5 17 16.5 100 ?70 ?20 10 i dq = 1400 ma p out , output power (watts) pep figure 3. third order intermodulation distortion versus output power intermodulation distortion (dbc) imd, v dd = 32 vdc f1 = 859.95 mhz, f2 = 860.05 mhz ?30 ?40 ?50 ?60 1600 ma 1800 ma 2000 ma 100 ?80 ?20 10 7th order p out , output power (watts) pep figure 4. intermodulation distortion products versus output power intermodulation distortion (dbc) imd, v dd = 32 vdc i dq = 2000 ma f1 = 859.95 mhz, f2 = 860.05 mhz ?30 ?40 ?50 ?60 ?70 5th order 3rd order d 100 5 45 10 p out , output power (watts) pep figure 5. two - tone drain efficiency versus output power v dd = 32 vdc i dq = 2000 ma f1 = 859.95 mhz, f2 = 860.05 mhz 40 35 30 25 20 15 10 d 100 12 19 10 ?80 60 g ps imd p out , output power (watts) pep figure 6. power gain, efficiency and imd versus output power g ps , power gain (db) intermodulation distortion (dbc) imd, v dd = 32 vdc i dq = 2000 ma f1 = 859.95 mhz, f2 = 860.05 mhz 18 40 17 20 16 0 15 ?20 14 ?40 13 ?60 d , drain efficiency (%) d , drain efficiency (%)
6 rf device data freescale semiconductor MRF377HR3 f mhz z source z load 845 860 875 4.66 - j5.90 3.93 - j5.33 4.38 - j5.64 8.59 - j4.22 9.36 - j4.95 9.39 - j6.06 v dd = 32 v, i dq = 2000 ma, p out = 45 w avg., dvbt ofdm z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network ? ?+ + figure 7. 845 - 875 mhz narrowband series equivalent source and load impedance z o = 10 f = 845 mhz f = 875 mhz f = 845 mhz f = 875 mhz z load z source
MRF377HR3 7 rf device data freescale semiconductor table 6. 470?860 mhz broadband test circuit component designations and values part description part number manufacturer b1, b2 ferrite beads, surface mount, 30 (0603) 2506033007y0 fair - rite balun 1, balun 2 rogers 3.006, r = 6.06, 1 oz cu c1 12 pf chip capacitor (0603) 06035j120gbs avx c2, c5 12 pf chip capacitors (0805) 08051j120gbs avx c3 3.9 pf chip capacitor (0805) 08051j3r9bbs avx c4, c7, c12, c15, c17 8.2 pf chip capacitors (0805) 08051j8r2bbs avx c6 3.3 pf chip capacitor (0805) 08051j3r3bbs avx c8 0.4 - 2.5 pf variable capacitor 27283pc gigatronics c9, c10 3.3 pf chip capacitors (0603) 06035j3r3bbs avx c11, c14 10 pf chip capacitors (0805) 08051j100gbs avx c13 4.7 pf chip capacitor (0805) 08051j4r7bbs avx c16 2.2 pf chip capacitor (0603) 06035j2r2bbs avx c18 2.2 pf chip capacitor (0805) 08051j2r2bbs avx c19, c20, c21, c22 47 f, 16 v tantalum chip capacitors t491d476k016at kemet c23, c26 2.2 f, 50 v ceramic chip capacitors c1825c225j5rac kemet c24, c25, c27, c29 0.01 f, 100 v ceramic chip capacitors c1825c103j1gac kemet c28, c30 0.56 f, 50 v ceramic chip capacitors c1825c564j5gac kemet c31, c32 10 f, 50 v chip capacitors t491d106k010at kemet c33, c34 470 f, 63 v electrolytic capacitors emvy630gtr471mmh0s united chemi - con l1, l2 15 nh inductors (0603) l0603150ggw003 avx l3, l4 12 nh inductors (0603) 0603hc- 12nhjbu coilcraft l5, l6 8 nh coil inductors a03t - 5 coilcraft l7 22 nh coil inductor b07t - 5 coilcraft l8 18.5 nh coil inductor a05t - 5 coilcraft r1, r2 12.1 , 1/16 w, chip resistors crcw060312r1fkea vishay
8 rf device data freescale semiconductor MRF377HR3 figure 8. 470 - 860 mhz broadband test circuit component layout c27 c30 c29 c25 c26 c23 c7 l5 balun 2 v dd c18 c34 c17 v dd c31 c32 l7 l6 c28 c13 c11 c14 c12 c15 l1 c22 balun 1 v gg b2 c21 l2 v gg c24 c19 c20 c10 l4 c1 c4 c5 c2 c6 c3 b1 c9 l3 r2 r1 c33 c8 l8 ds1047 rev 4 ds1047 rev 4 c16 multilayer balun mounting detail topside view upside down view freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
MRF377HR3 9 rf device data freescale semiconductor typical dvbt ofdm broadband characteristics 900 9 19 420 ?65 40 18 35 17 30 16 25 15 20 14 ?40 13 ?45 12 ?50 11 ?55 10 ?60 480 540 600 660 720 780 840 f, frequency (mhz) figure 9. single - channel dvbt ofdm broadband performance g ps , power gain (db) acpr, adjacent channel power ratio d g ps acpr v dd = 32 vdc, p out = 45 w (avg.), i dq = 2000 ma 8k mode dvbt ofdm 64 qam data carrier modulation 5 symbols 50 16 19 2 p out , output power (watts) avg. figure 10. single - channel dvbt ofdm broadband performance power gain versus output power g ps , power gain (dbc) 30 10 468 18.5 18 17.5 17 16.5 470 mhz v dd = 32 vdc, i dq = 2000 ma 8k mode ofdm 64 qam data carrier modulation 5 symbols 660 mhz 560 mhz 860 mhz 760 mhz 100 0 30 470 mhz p out , output power (watts) avg. figure 11. single - channel dvbt ofdm broadband performance drain efficiency versus output power v dd = 32 vdc i dq = 2000 ma 8k mode ofdm 64 qam data carrier modulation 5 symbols 10 25 20 15 10 5 660 mhz 560 mhz 860 mhz 760 mhz 100 ?68 ?56 10 470 mhz p out , output power (watts) avg. figure 12. single - channel dvbt ofdm broadband performance adjacent channel power ratio versus output power acpr, adjacent channel power ratio (dbc) v dd = 32 vdc i dq = 2000 ma 8k mode dvbt ofdm 64 qam data carrier modulation 5 symbols ?58 ?60 ?62 ?64 ?66 660 mhz 860 mhz 560 mhz 760 mhz 5 ?20 ?5 7.61 mhz f, frequency (mhz) figure 13. 8k mode dvbt ofdm spectrum ?30 ?40 ?50 ?90 ?70 ?80 ?100 ?110 ?60 ?4 ?3 ?2 ?1 0 1 2 3 4 4 khz bw 4 khz bw (db) d , drain efficiency (%) d , drain efficiency (%)
10 rf device data freescale semiconductor MRF377HR3 typical atsc 8vsb broadband characteristics d 900 8 18 420 ?45 45 g ps f, frequency (mhz) figure 14. single - channel atsc 8vsb broadband performance g ps , power gain (db) v dd = 32 vdc p out = 80 w (avg.) i dq = 2000 ma atsc 8vsb acpr, adjacent channel power ratio 17 40 16 35 15 30 14 25 13 ?15 12 ?20 11 ?25 10 ?30 9 ?35 480 540 600 660 720 780 840 acpr 100 16 19 p out , output power (watts) avg. figure 15. single - channel atsc 8vsb broadband performance power gain versus output power g ps , power gain (dbc) v dd = 32 vdc i dq = 2000 ma atsc 8vsb 470 mhz 660 mhz 560 mhz 860 mhz 760 mhz 18.5 18 17.5 17 16.5 10 100 0 40 p out , output power (watts) avg. figure 16. single - channel atsc 8vsb broadband performance drain efficiency versus output power 470 mhz v dd = 32 vdc i dq = 2000 ma atsc 8vsb 660 mhz 560 mhz 860 mhz 760 mhz 35 30 25 20 15 10 5 10 100 ?50 ?25 10 860 mhz p out , output power (watts) avg. figure 17. single - channel atsc 8vsb broadband performance adjacent channel power ratio versus output power acpr, adjacent channel power ratio (dbc) v dd = 32 vdc i dq = 2000 ma atsc 8vsb 560 mhz 760 mhz 660 mhz 470 mhz ?30 ?35 ?40 ?45 imru 4.0 ?100 ?10 0 imrl f, frequency (mhz) figure 18. atsc 8vsb spectrum reference point ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 0.8 ?0.8 1.6 2.4 3.2 ?4.0 ?3.2 ?2.4 ?1.6 3.25 mhz offset 3.25 mhz offset (db) d , drain efficiency (%) d , drain efficiency (%)
MRF377HR3 11 rf device data freescale semiconductor 6.57 - j4.03 660 figure 19. 470?860 mhz broadband series equivalent source and load impedance f mhz z source z load 470 560 5.79 - j2.40 6.63 - j2.63 6.21 - j1.69 5.66 - j1.12 6.76 - j1.00 optimized for v dd = 32 v, i dq = 2000 ma, p out = 45 w avg., dvbt ofdm z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network ? ?+ + z o = 10 f = 470 mhz f = 860 mhz f = 860 mhz f = 470 mhz z load z source 760 860 5.34 - j6.28 6.67 - j4.55 6.57 - j1.91 7.37 - j5.45 z o = 10
12 rf device data freescale semiconductor MRF377HR3 package dimensions case 375g - 04 issue g 1 2 34 5 d q g l k 2x h e f c seating plane notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. dimension h to be measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.140 (28.96) based on 3m screw. 4x b a t dim a min max min max millimeters 1.335 1.345 33.91 34.16 inches b 0.380 0.390 9.65 9.91 c 0.180 0.224 4.57 5.69 d 0.325 0.335 8.26 8.51 e 0.060 0.070 1.52 1.78 f 0.004 0.006 0.10 0.15 g h 0.097 0.107 2.46 2.72 k 0.135 0.165 3.43 4.19 l n 0.851 0.869 21.62 22.07 q 0.118 0.138 3.00 3.30 r 0.395 0.405 10.03 10.29 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source 1.100 bsc 0.425 bsc 27.94 bsc 10.8 bsc j 0.2125 bsc 5.397 bsc m 0.852 0.868 21.64 22.05 s 0.394 0.406 10.01 10.31 bbb 0.010 ref 0.25 ref ccc 0.015 ref 0.38 ref m a m bbb b m t m a m bbb b m t b (flange) 4x m a m bbb b m t m a m ccc b m t r (lid) s (insulator) j m a m bbb b m t m a m ccc b m t n (lid) m (insulator) a 4 ni - 860c3
MRF377HR3 13 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 2 mar. 2009 ? data sheet revised to reflect part status change, removing mrf377hr5. refer to pcn13170. (see rev. 1 data sheet for mrf377hr5.) ? updated part numbers in tables 5 and 6, component designations and values, to rohs compliant part numbers, p. 4, 7 ? added revision history, p. 13
14 rf device data freescale semiconductor MRF377HR3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006, 2009. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf377h rev. 2, 3/2009

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