? semiconductor components industries, llc, 2006 march, 2006 ? rev. 12 1 publication order number: 2n5191/d 2N5190, 2n5191, 2n5192 silicon npn power transistors silicon npn power transistors are for use in power amplifier and switching circuits, ? excellent safe area limits. complement to pnp 2n5194, 2n5195. features ? esd ratings: machine model, c; > 400 v human body model, 3b; > 8000 v ? epoxy meets ul 94 v?0 @ 0.125 in. ? pb?free packages are available* maximum ratings rating symbol value unit collector?emitter voltage 2N5190 2n5191 2n5192 v ceo 40 60 80 vdc collector?base v oltage 2N5190 2n5191 2n5192 v cbo 40 60 80 vdc emitter?base voltage v ebo 5.0 vdc collector current i c 4.0 adc base current i b 1.0 adc total device dissipation @ t c = 25 c derate above 25 c p d 40 320 w mw/ c operating and storage junction temperature range t j , t stg ? 65 to + 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 3.12 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com device package shipping ? 2N5190 to?225aa 500 units/box 4.0 amperes npn silicon power transistors 40, 60, 80 volts ? 40 watts y = year ww = work week 2n519x = device code x = 0, 1, or 2 g = pb?free package 2n5191g to?225aa (pb?free) 500 units/box 2n5192 to?225aa 500 units/box to?225aa case 77 style 1 marking diagram yww 2 n519xg 3 2 1 2n5191 to?225aa 500 units/box ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. 2n5192g to?225aa (pb?free) 500 units/box 2N5190g to?225aa (pb?free) 500 units/box
2N5190, 2n5191, 2n5192 http://onsemi.com 2 electrical characteristics* (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (note 1) (i c = 0.1 adc, i b = 0) 2N5190 2n5191 2n5192 v ceo(sus) 40 60 80 ? ? ? vdc collector cutoff current (v ce = 40 vdc, i b = 0) 2N5190 (v ce = 60 vdc, i b = 0) 2n5191 (v ce = 80 vdc, i b = 0) 2n5192 i ceo ? ? ? 1.0 1.0 1.0 madc collector cutoff current (v ce = 40 vdc, v eb(off) = 1.5 vdc) 2N5190 (v ce = 60 vdc, v eb(off) = 1.5 vdc) 2n5191 (v ce = 80 vdc, v eb(off) = 1.5 vdc) 2n5192 (v ce = 40 vdc, v eb(off) = 1.5 vdc, t c = 125 c) 2N5190 (v ce = 60 vdc, v eb(off) = 1.5 vdc, t c = 125 c) 2n5191 (v ce = 80 vdc, v eb(off) = 1.5 vdc, t c = 125 c) 2n5192 i cex ? ? ? ? ? ? 0.1 0.1 0.1 2.0 2.0 2.0 madc collector cutoff current (v cb = 40 vdc, i e = 0) 2N5190 (v cb = 60 vdc, i e = 0) 2n5191 (v cb = 80 vdc, i e = 0) 2n5192 i cbo ? ? ? 0.1 0.1 0.1 madc emitter cutoff current (v be = 5.0 vdc, i c = 0) i ebo ? 1.0 madc on characteristics (note 1) dc current gain (i c = 1.5 adc, v ce = 2.0 vdc) 2N5190/2n5191 2n5192 (i c = 4.0 adc, v ce = 2.0 vdc) 2N5190/2n5191 2n5192 h fe 25 20 10 7.0 100 80 ? ? ? collector?emitter saturation voltage (i c = 1.5 adc, i b = 0.15 adc) (i c = 4.0 adc, i b = 1.0 adc) v ce(sat) ? ? 0.6 1.4 vdc base?emitter on voltage (i c = 1.5 adc, v ce = 2.0 vdc) v be(on) ? 1.2 vdc dynamic characteristics current?gain ? bandwidth product (i c = 1.0 adc, v ce = 10 vdc, f = 1.0 mhz) f t 2.0 ? mhz *jedec registered data. 1. pulse test: pulse width 300 s, duty cycle 2.0%.
2N5190, 2n5191, 2n5192 http://onsemi.com 3 v ce , collector?emitter voltage (volts) figure 1. dc current gain i c , collector current (amp) 10 0.1 0.004 7.0 5.0 1.0 0.7 0.5 0.3 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 4.0 v ce = 2.0 v v ce = 10 v figure 2. collector saturation region i b , base current (ma) 2.0 0 0.05 1.6 1.2 0.8 0.4 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 500 i c = 10 ma 2.0 3.0 t j = 150 c ?55 c 25 c 3.0 2.0 0.2 h fe , dc current gain (normalized) 5.0 7.0 20 30 50 70 100 200 300 100 ma 1.0 a 3.0 a t j = 25 c 2.0 0.005 i c , collector current (amp) 0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0 1.6 1.2 0.8 0.4 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 figure 3. ?on? voltages 0.1 0.5 3.0 v be @ v ce = 2.0 v +2.5 figure 4. temperature coefficients i c , collector current (amp) t j = ?65 c to +150 c v , temperature coefficients (mv/ c) +2.0 +1.5 +0.5 0 ?0.5 ?1.0 ?1.5 ?2.0 ?2.5 v for v be * v for v ce(sat) *applies for i c /i b h fe @v ce 2.0v 2 +1.0 0.005 0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0 0.1 0.5 3.0
2N5190, 2n5191, 2n5192 http://onsemi.com 4 r be , external base?emitter resistance (oh m 10 3 ?0.4 figure 5. collector cut?off region v be , base?emitter voltage (volts) 10 2 10 1 10 0 10 ?1 10 ? 2 10 ? 3 ?0.3 ?0.2 ?0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 v ce = 30 v t j = 150 c 100 c 25 c reverse forward i ces 10 7 20 figure 6. effects of base?emitter resistance t j , junction temperature ( c) 40 60 80 100 120 140 16 0 10 6 10 5 10 4 10 3 10 2 v ce = 30 v i c = 10 x i ces i c = 2 x i ces i c i ces (typical i ces values obtained from figure 5) figure 7. switching time equivalent test circuit approx +11 v turn?on pulse v in t 1 v eb(off) turn?off pulse v in t 3 t 2 approx +11 v v cc scope r b c jd < 2N5190, 2n5191, 2n5192 http://onsemi.com 5 10 1.0 figure 11. rating and thermal data active?region safe operating area v ce , collector?emitter voltage (volts) 5.0 2.0 1.0 0.5 0.1 2.0 5.0 10 20 50 10 0 secondary breakdown limit thermal limit at t c = 25 c bonding wire limit 0.2 i c , collector current (amp) curves apply below rated v ceo t j = 150 c dc 1.0ms 100 s 2n5191 2n5192 5.0ms there are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 11 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 12. thermal response t, time or pulse width (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 r(t), effective transient thermal resistance (normalized) 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100 200 1000 500 jc(max) = 3.12 c/w 2N5190?92 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 design note: use of transient thermal resistance data t p p p p p t 1 1/f duty cycle, d = t 1 f ? t 1 t p peak pulse power = p p figure a a train of periodical power pulses can be represented by the model shown in figure a. using the model and the device thermal response, the normalized effective transient thermal resistance of figure 12 was calculated for various duty cycles. to find jc (t), multiply the value obtained from figure 12 by the steady state value jc . example: the 2N5190 is dissipating 50 watts under the following conditions: t 1 = 0.1 ms, t p = 0.5 ms. (d = 0.2). using figure 12, at a pulse width of 0.1 ms and d = 0.2, the reading of r(t 1 , d) is 0.27. the peak rise in function temperature is therefore: t = r(t) x p p x jc = 0.27 x 50 x 3.12 = 42.2 c
2N5190, 2n5191, 2n5192 http://onsemi.com 6 package dimensions to?225aa case 77?09 issue z style 1: pin 1. emitter 2. collector 3. base notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 077?01 thru ?08 obsolete, new standard 077?09. ?b? ?a? m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 ??? 1.02 ??? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n5191/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
|
