the information in this document is subject to change without notice. ? 1998 mos field effect transistor 2sK2984 switching n-channel power mos fet industrial use document no. d12356ej1v0ds00 (1st edition) date published october 1998 ns cp (k) printed in japan data sheet description this product is n-channel mos field effect transistor designed for high current switching application. features low on-resistance r ds(on)1 = 10 m w ( max.) (v gs = 10 v, i d = 20 a) r ds(on)2 = 15 m w ( max.) (v gs = 4.5 v, i d = 20 a) low c iss c iss = 2850 pf typ. built-in gate protection diode ordering information part number package 2sK2984 to-220ab 2sK2984-s to-262 2sK2984-zj to-263 absolute maximum ratings (t a = 25 c) drain to source voltage note1 v dss 30 v gate to source voltage note2 v gss 20 v drain current (dc) i d(dc) 40 a drain current (pulse) note3 i d(pulse) 160 a total power dissipation (t a = 25c) p t 1.5 w total power dissipation (t c = 25c) p t 60 w channel temperature t ch 150 c storage temperature t stg - 55 to +150 c notes.1 v gs = 0 v 2 v ds = 0 v 3 pw 10 m s, duty cycle 1 % .
2 2sK2984 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit r ds(on)1 v gs = 10 v, i d = 20 a 6.5 10 m w drain to source on-state resistance r ds(on)2 v gs = 4.5 v, i d = 20 a 8.5 13 m w gate to source cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.0 1.5 2.0 v forward transfer admittance | y fs |v ds = 10 v, i d = 20 a 18 36 s drain leakage current i dss v ds = 30 v, v gs = 0 v 10 m a gate to source leakage current i gss v gs = 20 v, v ds = 0 v 10 m a input capacitance c iss 2600 pf output capacitance c oss 1150 pf reverse transfer capacitance c rss v ds = 10 v v gs = 0 v f = 1 mhz 500 pf turn-on delay time t d(on) 70 ns rise time t r 1100 ns turn-off delay time t d(off) 210 ns fall time t f i d = 20 a v gs(on) = 10 v v dd = 15 v r g = 10 w 310 ns total gate charge q g 65 nc gate to source charge q gs 9.5 nc gate to drain charge q gd i d = 40 a v dd = 24 v v gs = 10 v 12.5 nc body diode forward voltage v f(s-d) i f = 40 a, v gs = 0 v 0.8 v reverse recovery time t rr 50 ns reverse recovery charge q rr i f = 40 a, v gs = 0 v di/dt = 100 a / m s 100 nc test circuit 1 switching time test circuit 2 gate charge pg. r g 0 v gs d.u.t. r l v dd t = 1 s m duty cycle 1 % v gs wave form i d wave form v gs 10 % 90 % v gs(on) 10 % 0 i d 90 % 90 % t d(on) t r t d(off) t f 10 % t r g = 10 w i d 0 t on t off pg. 50 w d.u.t. r l v dd i g = 2 ma
3 2sK2984 typical characteristics (t a = 25 c) forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a 1 derating factor of forward bias safe operating area t c - case temperature - ?c dt - percentage of rated power - % total power dissipation vs. case temperature t c - case temperature - ?c p t - total power dissipation - w 0 20 0 20 40 60 80 100 120 140 160 20 40 60 80 100 40 60 80 100 120 140 160 70 60 50 40 30 20 10 1 0.1 10 100 1000 1 10 100 t c = 25 ?c single pulse 0 1.0 1.5 2.0 100 10 100 1000 pulsed 125 0.5 0 pulsed 2 v gs =10 v 4 t ch = -25 ?c 25 ?c 125 ?c 68 1 ms power dissipation limited dc 100 ms i d(dc) 10 ms i d(pulse) v ds = 10 v 75 50 v gs = 4.5 v r ds(on) limited (at vgs =10 v)
4 2sK2984 transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ?c /w forward transfer admittance vs. drain current i d - drain current - a | y fs | - forward transfer admittance - s drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m w 05 drain to source on-state resistance vs. drain current gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cut-off voltage - v i d - drain current - a r ds(on) - drain to source on-state resistance - m w 20 1 10 0.001 0.01 0.1 1 100 1 000 1 m 10 m 100 m 1 10 100 1 000 10 100 v ds = 10 v pulsed 1 10 10 100 1000 100 1000 10 10 15 pulsed 30 10 100 pulsed 0 v ds = 10 v i d = 1 ma - 50 0 50 100 150 0 1 single pulse 1.0 2.0 30 20 v gs =10 v v gs = 4.5 v 1.5 0.5 10 t ch = -25 ?c 25 ?c 75 ?c 125 ?c r th(ch-a) = 83.3 ?c/w r th(ch-c) = 2.08 ?c/w i d = 20 a t c = 25 ?c mm
5 2sK2984 1.0 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - m w i sd - diode forward current - a capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1 0.1 0 - 50 5 0 50 100 150 i d = 20 a 10 0.1 100 1000 10000 1 10 100 v gs = 0 v f = 1 mhz 10 100 1000 1 10 100 v gs - gate to source voltage - v reverse recovery time vs. drain current i f - diode current - a t rr - reverse recovery time - ns di/dt = 100 a/ m s v gs = 0 v 1 0.1 10 1 10 100 v dd = 15 v v gs = 10 v r g = 10 w dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 0 20 40 60 80 10 20 30 40 2 4 6 8 0 10 20 15 c iss c oss c rss v dd = 24 v 15 v 6 v v ds t f 1000 100 12 14 10 i d = 40 a v gs v gs = 10 v v gs = 4.5 v 0 1.5 t r t d(on) t d(off) v sd - source to drain voltage - v 0.5 pulsed v gs = 0 v source to drain diode forward voltage 0.1 1 10 100
6 2sK2984 package drawings (unit : mm) 1)to-220ab (mp-25) 2)to-262 (to-220 fin cut:mp-25s) 3)to-263 (jedec type:mp-25zj) equivalent circuit remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. source body diode gate protection diode gate drain 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 3.60.2 4 3.00.3 1.30.2 0.750.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.30.2 0.50.2 2.80.2 f 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 (10) 4 1.30.2 0.750.3 2.54 typ. 2.54 typ. 8.50.2 12.7 min. 1.30.2 0.50.2 2.80.2 1.00.5 (10) 1.40.2 1.00.5 2.54 typ. 2.54 typ. 8.50.2 123 5.70.4 4 2.80.2 4.8 max. 1.30.2 0.50.2 (0.5r) (0.8r) 1.gate 2.drain 3.source 4.fin (drain) 0.70.2
7 2sK2984 [memo]
2sK2984 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96. 5
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