UMX1N dual npn general purpose transistors elektronische bauelemente 12-jul-2010 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? two 2sc2412k chips in a package. ? mounting possible with sot-363 automatic mounting machines. ? transistor elements are independent, eliminating interference. ? mounting cost and area can be cut in half. equivalent circuit marking x1 absolute maximum ra tings at ta = 25 c parameter symbol value unit collector-base voltage v (br)cbo 60 v collector-emitter voltage v (br)ceo 50 v emitter-base voltage v (br)ebo 7 v collector current i c 150 ma collector power dissipation p c 150 mw junction & storage temperature t j , t stg 150, -55 ~ 150 absolute maximum ratings and electr ical characteristics at ta = 25 c parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 60 - - v i c = 50 ? a, i e =0 collector-emitter breakdown voltage v (br)ceo 50 - - i c = 1ma , i b = 0 emitter-base breakdown voltage v (br)ebo 7 - - v i e = 50 ? a , i c = 0 collector cut-off current i cbo - - 0.1 ? a v cb = 60v, i e =0 emitter cut-off current i ebo - - 0.1 ? a v eb = 7v, i c = 0 dc current gain h fe 120 - 560 v ce = 6v, i c = 1ma collector-emitter saturation voltage v ce(sat) - - 0.4 v i c = 50ma, i b = 5ma transition frequency f t - 180 - mhz v ce = 12v, i c = 2ma, f=100mhz collector output capacitance c ob - 2.0 3.5 pf v cb = 12v, i e = 0, f=1mhz ref. millimete r ref. millimete r min. max. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 sot-363 b l f h c j d g k a e 1 2 3 6 5 4 (3) (2) (1) (4) (6) (5) tr 2 tr 1
UMX1N dual npn general purpose transistors elektronische bauelemente 12-jul-2010 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
UMX1N dual npn general purpose transistors elektronische bauelemente 12-jul-2010 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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