UPS560E3 5 a schottk y barrier rectifier description this UPS560E3 in the powermite3 ? package is a high efficiency schottky rectifier that is also rohs compliant offering high current/power capabilities previously found only in much larger packages. they are ideal for smd applications that operate at high frequencies. in addition to its size advantages, the powermite3 ? package includes a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly and a unique locking tab act as an efficient h eat path to the heat-sink mounting. its innovative design makes this device i deal for use with automatic insertion equipment. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com absolute maximum ratings at 25o c (unless otherwise specified) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 60 v rms reverse voltage v r (rms) 42 v average rectified output current i o 5 a non-repetitive peak forward surge current 8.3ms single half sine wave superimposed on rated load@ t c =90 oc i fsm 100 a storage temperature t stg -55 to +150 oc junction temperature t j -55 to +125 oc note: 1 short duration test pulse used to minimize self ? heating effect. thermal characteristics thermal resistance junction-to-case (bottom) r jc 3.2 oc/ watt junction to ambient (1) r ja 65 oc/ watt (1) when mounted on fr-4 pc board using 2 oz copper with recommended minimum foot print powermite 3? key features ? very low thermal resistance package ? rohs compliant wi th e3 suffix part number ? guard-ring-die construction for transient protection ? efficient heat path with integral locking bottom metal tab ? low forward voltage ? full metallic bottom eliminates flux entrapment ? compatible with automatic insertion ? low profile-maximum height of 1mm applicati ons/benefits ? switching and regulating power supplies. ? silicon schottky (hot carrier) rectifier for minimal reverse voltage recovery ? elimination of reverse-recovery oscillations to reduce need for emi filtering ? charge pump circuits ? reduces reverse reco very loss with low i rm ? small foot print 190 x 270 mils (1:1 actual size) see mounting pad details on pg 3 mechanical & packaging ? case: void-free transfer molded thermosetting epoxy compound meeting ul94v-0 ? finish: annealed matte-tin plating over copper and readily solderable per mil- std-750 method 2026 (consult factory for tin-lead plating) ? polarity: see figure (left) ? marking: s560? ? weight: 0.072 gram (approx.) ? package dimension on last page ? tape & reel option: 16 mm tape per standard eia-481-b, 5000 on 13? reel www. microsemi . com u u p p s s 5 5 6 6 0 0 e e 3 3 microsemi copyright ? 2007 10-15-2007 rev e page 1
UPS560E3 5 a schottk y barrier rectifier www. microsemi . com graphs electrical parameters @ 25 c (unless otherwise specified) parameter symbol conditions min typ. max units forward voltage (note 1) v fm i f = 5 a , t j = 25 oc i f = 5 a , t j = 125 oc i f = 8 a , t j = 25 oc i f = 8 a , t j = 125 oc 0.65 0.56 0.74 0.64 0.69 0.60 0.78 0.68 v reverse break down voltage (note 1) v br i r = 0.2 ma 60 v reverse current (note1) i rm v r = 60 v, t j = 25oc v r = 60 v, t j =125 oc 2 0.6 200 20 a ma capacitance c t v r = 4 v; f = 1 mh z 150 pf u u p p s s 5 5 6 6 0 0 e e 3 3 microsemi copyright ? 2007 10-15-2007 rev e page 2
microsemi page 3 UPS560E3 5 a schottk y barrier rectifier www. microsemi . com note 1: t a = t c at case bottom where r jc =2.5o c/w and r ca = 0o c/w (infinite heat sink). note 2: device mounted on getek substrate, 2" x 2" , 2 oz. copper , double-sided , cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". r ja in range of 20-35 c/w. note 3: device mounted on fra-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout r ja in range of 65c/w. see package & mounting pad dimensions (inches) u u p p s s 5 5 6 6 0 0 e e 3 3 copyright ? 2007 10-15-2007 rev e
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