advance product information april 25, 2005 1 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com q-band power amplifier TGA4043 key features ? frequency range: 40-45 ghz ? 29 dbm nominal pout @ p1db ? 10 db nominal gain ? 0.25 um phemt technology ? bias 7v @ 500 ma ? chip dimensions 3.08 mm x 3.14 x 0.10 mm (0.121 x 0.124 x 0.004 in) primary applications ? point to point radio ? point to multipoint radio ? military communications measured fixtured data bias conditions: vd = 7v, id = 500ma 25 26 27 28 29 30 31 32 40 40.5 41 41.5 42 42.5 43 43.5 44 44.5 45 frequency (ghz) p1db (dbm) product description the triquint TGA4043 is a compact high power amplifier mmic for q-band applications. the part is designed using triquints proven standard 0.25 um gate power phemt production process. the TGA4043 provides a nominal 28 dbm of output power at 1 db gain compression from 40-45 ghz with a small signal gain of 10 db. the part is ideally suited for low cost emerging markets such as point-to-point radio and point-to-multi point communications. the TGA4043 is 100% dc and rf tested on-wafer to ensure performance compliance. -15 -12 -9 -6 -3 0 3 6 9 12 15 30 32 34 36 38 40 42 44 46 48 50 frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 5 10 15 20 25 return loss (db) input output gain note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice.
advance product information april 25, 2005 2 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 8 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 960 ma 2/ | i g | gate supply current 56 ma p in input continuous wave power 27 dbm 2/ p d power dissipation 4.6 w 2/, 3/ t ch operating channel temperature 150 c 4/, 5 / t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ current is defined under no rf drive conditions. combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this power dissipation with a base plate temperature of 70 c, the median life is 1 e+6 hours. 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ these ratings apply to each individual fet. TGA4043 table ii dc probe test (t a = 25 c, nominal) symbol parameter minimum maximum unit i dss, q1 saturated drain current 40 188 ma g m, q1 transconductance 88 212 ms v p, q1,2, 3-6, 7, 8, 9-12 pinch-off voltage -1.5 -0.5 v v bvgd, q1,2 breakdown voltage gate- drain -30 -8 v v bvgs, q1 breakdown voltage gate- source -30 -8 v
advance product information april 25, 2005 3 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com table iii rf characterization table (t a = 25 c, nominal) vd = 7v, id = 500 ma symbol parameter test condition typical limits units gain small signal gain f = 40-45 ghz 10 db irl input return loss f = 40-45 ghz 14.5 db orl output return loss f = 40-45 ghz 12.5 db p 1db output power @ 1db gain compression f = 40-45 ghz 29 dbm table iv thermal information* parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) vd = 7 v i d = 500 ma pdiss = 3.5 w 130 17.3 5.9 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. TGA4043
advance product information april 25, 2005 4 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com 25 26 27 28 29 30 31 32 40 40.5 41 41.5 42 42.5 43 43.5 44 44.5 45 frequency (ghz) p1db (dbm) measured fixtured data bias conditions: vd = 7v, id = 500ma 15 17 19 21 23 25 27 29 31 6 8 10 12 14 16 18 20 22 24 input power (dbm) output power (dbm) 40 ghz 41 ghz 42 ghz 43 ghz 44 ghz 45 ghz -15 -12 -9 -6 -3 0 3 6 9 12 15 30 32 34 36 38 40 42 44 46 48 50 frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 5 10 15 20 25 return loss (db) input output gain 0 2 4 6 8 10 12 14 16 6 8 10 12 14 16 18 20 22 24 input power (dbm) pae (%) 40 ghz 41 ghz 42 ghz 43 ghz 44 ghz 45 ghz TGA4043
advance product information april 25, 2005 5 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com mechanical characteristics gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. %rqg3dg 5),qsxw %rqg3dg 9j %rqg3dg 9g %rqg3dg 9j %rqg3dg 9g %rqg3dg %\sdvv %rqg3dg 5)2xwsxw %rqg3dg %\sdvv %rqg3dg 9g %rqg3dg 9j %rqg3dg 9g %rqg3dg 9j 8qlwv ploolphwhuv lqfkhv 7klfnqhvv uhihuhqfhrqo\ &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurierqgsdg &klsvl]hwrohudqfh *1',6%$&.6,'(2)00,& [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ TGA4043
advance product information april 25, 2005 6 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram note: we recommend 1f caps on the bias lines to suppress possible low frequency oscillations. 100pf 100pf 100pf 100pf 0.01 p f 0.01 p f vd = 7v vg 1 p f vg 10 : vd = 7v 1 p f10 : TGA4043
advance product information april 25, 2005 7 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. TGA4043
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