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| inchange semiconductor product specification silicon npn power transistors BU500 description ? with to-3 package ? low collector saturation voltage applications ? designed for use in large screen color deflection circuits. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current 6 a i cm collector current-peak 16 a i b base current 4 a p t total power dissipation t c =25 ?? 75 w t j junction temperature -65~150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.66 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU500 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.5a; i b =0;l=10mh 700 v v (br)ebo emitter-base breakdown voltage i e =100ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =4.5a;i b =2a 1.0 v v be base-emitter on voltage i c =4.5a;v ce =5v 1.3 v i cbo collector cut-off current v ce =1000v;v be =-2v 0.02 ma i cex collector cut-off current v ce =1500v;v be =-2v 1.0 ma i ebo emitter cut-off current v eb =4v; i c =0 10 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 36 h fe-2 dc current gain i c =4.5a ; v ce =5v 3.0 switching times t s storage time 1.2 | s t f fall time i c =4.5a ;i b1 =-i b2 =1.5a v cc =100v ; 1.0 | s inchange semiconductor product specification 3 silicon npn power transistors BU500 package outline fig.2 outline dimensions |
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