? semiconductor components industries, llc, 2006 august, 2006 ? rev. 6 1 publication order number: 2N6394/d 2N6394 series preferred device silicon controlled rectifiers reverse blocking thyristors designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. features ? glass passivated junctions with center gate geometry for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability ? blocking voltage to 800 v ? pb?free packages are available* maximum ratings ? (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off?state voltage (note 1) (t j = ?40 to 125 c, sine wave, 50 to 60 hz, gate open) 2N6394 2n6395 2n6397 2n6399 v drm, v rrm 50 100 400 800 v on-state rms current (180 conduction angles; t c = 90 c) i t(rms) 12 a peak non-repetitive surge current (1/2 cycle, sine wave, 60 hz, t j = 90 c) i tsm 100 a circuit fusing (t = 8.3 ms) i 2 t 40 a 2 s forward peak gate power (pulse width 1.0 s, t c = 90 c) p gm 20 w forward average gate power (t = 8.3 ms, t c = 90 c) p g(av) 0.5 w forward peak gate current (pulse width 1.0 s, t c = 90 c) i gm 2.0 a operating junction temperature range t j ?40 to +125 c storage temperature range t stg ?40 to +150 c maximum ratings ? (t j = 25 c unless otherwise noted) rating symbol max unit thermal resistance, junction?to?case r jc 2.0 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c ?indicates jedec registered data stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com scrs 12 amperes rms 50 thru 800 volts k g a preferred devices are recommended choices for future use and best overall value. pin assignment 1 2 3 anode gate cathode 4 anode see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information to?220ab case 221a style 3 1 2 3 4 2n639x = device code x = 4, 5, 7, or 9 g = pb?free package a = assembly location y = year ww = work week marking diagram 2n639xg ayww
2N6394 series http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics ?peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25 c t j = 125 c i drm , i rrm ? ? ? ? 10 2.0 a ma on characteristics ?peak forward on?state voltage (note 2) (i tm = 24 a peak) v tm ? 1.7 2.2 v ?gate tri gger current (continuous dc) (v d = 12 vdc, r l = 100 ohms) i gt ? 5.0 30 ma ? gate tri gger v oltage (continuous dc) (v d = 12 vdc, r l = 100 ohms) v gt ? 0.7 1.5 v gate non?tri gger v oltage (v d = 12 vdc, r l = 100 ohms, t j = 125 c) v gd 0.2 ? ? v ? holding current (v d = 12 vdc, initiating current = 200 ma, gate open) i h ? 6.0 50 ma turn-on time (i tm = 12 a, i gt = 40 madc, v d = rated v drm ) t gt ? 1.0 2.0 s turn-off time (v d = rated v drm )(i tm = 12 a, i r = 12 a) (i tm = 12 a, i r = 12 a, t j = 125 c) t q ? ? 15 35 ? ? s dynamic characteristics critical rate?of?rise of off-state voltage exponential (v d = rated v drm , t j = 125 c) dv/dt ? 50 ? v/ s ?indicates jedec registered data 2. pulse test: pulse width 300 sec, duty cycle 2%. + current + voltag e v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state) c t , maximum allowable case temperature ( c) 6.0 120 90 100 110 130 60 = 30 0 1.0 2.0 3.0 8.0 = conduction angle i t(av) , average on-state forward current (amps) 90 4.0 5.0 7.0 180 dc 125 95 105 115 figure 1. current derating p , average power (watts) (av) 12 0 4.0 8.0 20 t j 125 c i t(av) , average on-state current (amps) 7.0 0 1.0 2.0 3.0 8.0 = conduction angle 10 2.0 6.0 18 14 16 4.0 5.0 6.0 60 = 30 90 180 dc figure 2. maximum on?state power dissipation
2N6394 series http://onsemi.com 3 100 1.2 1.0 60 surge is preceded and followed by rated current t j = 125 c f = 60 hz number of cycles 70 80 90 100 2.0 3.0 4.0 6.0 8.0 10 0.1 0.4 50 0.2 0.3 0.5 0.7 7.0 5.0 1.0 2.0 10 50 3.0 20 30 70 v th , instantaneous on?state voltage (volts) 2.8 4.4 3.6 5.2 6.0 2.0 i , peak surge current (amp) tsm tm i , instantaneous on?state current (amps) t j = 25 c 125 c 1 cycle 55 65 75 85 95 figure 3. on?state characteristics figure 4. maximum non?repetitive surge curren t 1.0 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.2 0.3 0.5 1.0 2.0 0.1 z jc(t) = r jc ? r(t) 20 0.01 t, time (ms) 3.0 5.0 30 50 100 200 300 500 2.0 k 10 3.0 k 5.0 k 10 1.0 k figure 5. thermal response
2N6394 series http://onsemi.com 4 i , holding current (ma) h typical characteristics 140 120 100 80 60 40 0 ?60 30 ?20 ?40 20 t j , junction temperature ( c) 20 10 3.0 3.0 1.0 0.7 0.5 0.3 5.0 2.0 off-state voltage = 12 v off-state voltage = 12 v 30 50 20 10 5.0 70 7.0 140 120 100 80 60 40 0 ?20 ?40 20 t j , junction temperature ( c) 200 100 50 20 10 5.0 0.2 1.0 0.5 2.0 pulse width ( s) i gtm i gt v gt 140 120 100 80 60 40 0 ?60 1.0 ?20 ?40 20 t j , junction temperature ( c) 0.8 0.6 0.4 0.5 , peak gate current (ma) 3.0 100 200 300 160 , g ate tri gg er v o lta g e (v o lt s ) 0.7 1.1 0.9 off-state voltage = 12 v off-state voltage = 12 v 7.0 t j = ?40 c 25 c 100 c , gate trigger current (normalized) figure 6. typical gate trigger current versus pulse width figure 7. typical gate trigger current versus temperature figure 8. typical gate trigger voltage versus temperature figure 9. typical holding current versus temperature ordering information device package shipping ** 2N6394 to?220ab 500 units / bulk 2N6394g to?220ab (pb?free) 500 units / bulk 2n6395 to?220ab 500 units / bulk 2n6395g to?220ab (pb?free) 500 units / bulk 2n6397 to?220ab 500 units / bulk 2n6397g to?220ab (pb?free) 500 units / bulk 2n6399 to?220ab 500 units / bulk 2n6399g to?220ab (pb?free) 500 units / bulk **for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
2N6394 series http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j to?220ab case 221a?09 issue ad style 3: pin 1. cathode 2. anode 3. gate 4. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 2N6394/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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