DMBT9012 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for low frequency amplifier applications. characteristic symbol rating unit collector-base voltage vcbo -40 v collector-emitter voltage vceo -20 v emitter-base voltage vebo -5 v collector current ic -500 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 pinning 1 = base 2 = emitter 3 = collector rank l h range 120~200 200~350 classification of hfe1 characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -40 - - v ic=-100ma, ie=0 collector-emitter breakdown voltage bvceo -20 - - v ic=-1ma, ib=0 emitter-base breakdown volatge bvebo -5 - - v ie=-100ma, ic=0 collector cutoff current icbo - - -0.1 ma vcb =-25v, ie=0 emitter cutoff current iebo - - -0.1 ma veb =-3v, ic=0 collector-emitter saturation voltage (1) vce(sat) - - -0.6 v ic=-500ma, ib=-50ma base-emitter saturation voltage (1) vbe(sat) - - -1.2 v ic=-500ma, ib=-50ma dc current gain(1) hfe1 120 - 350 - ic=-50ma, vce=-1v hfe2 40 - - - ic=-500ma, vce=-1v electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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