vishay siliconix sup90n06-6m0p document number: 69536 s09-0703-rev. b, 27-apr-09 www.vishay.com 1 n-channel 60-v (d-s) mosfet features ? trenchfet ? power mosfet ? 175 c junction temperature ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? power supply - secondary synchronous rectification ? industrial product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 60 0.006 at v gs = 10 v 90 d 78.5 t o -220ab t op v i e w gd s ordering information: sup90n06-6m0p-e3 (lead (pb)-free) n-channel mosfet g d s notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 90 d a t c = 70 c 90 d pulsed drain current i dm 240 avalanche current i as 50 single avalanche energy a l = 0.1 mh e as 125 mj maximum power dissipation a t c = 25 c p d 272 b w t a = 25 c c 3.75 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 0.55 rohs complian t
www.vishay.com 2 document number: 69536 s09-0703-rev. b, 27-apr-09 vishay siliconix sup90n06-6m0p notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = 250 a 60 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a v ds = 60 v, v gs = 0 v, t j = 125 c 50 v ds = 60 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds 10 v, v gs = 10 v 70 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.005 0.006 v gs = 10 v, i d = 20 a, t j = 125 c 0.008 0.010 forward transconductance a g fs v ds = 15 v, i d = 20 a 58 s dynamic b input capacitance c iss v gs = 0 v, v ds = 30 v, f = 1 mhz 4700 pf output capacitance c oss 620 reverse transfer capacitance c rss 250 total gate charge c q g v ds = 30 v, v gs = 10 v, i d = 50 a 78.5 120 nc gate-source charge c q gs 28 gate-drain charge c q gd 20.6 gate resistance r g f = 1 mhz 1.2 2.4 tu r n - o n d e l ay t i m e c t d(on) v dd = 30 v, r l = 0.6 i d ? 50 a, v gen = 10 v, r g = 1 16 30 ns rise time c t r 10 20 turn-off delay time c t d(off) 25 40 fall time c t f 815 source-drain diode ratings and characteristics t c = 25 c b continuous current i s 85 a pulsed current i sm 240 forward voltage a v sd i f = 20 a, v gs = 0 v 0.83 1.5 v reverse recovery time t rr i f = 75 a, di/dt = 100 a/s 62 100 ns peak reverse recovery current i rm(rec) 3.8 5.7 a reverse recovery charge q rr 118 180 nc
vishay siliconix sup90n06-6m0p document number: 69536 s09-0703-rev. b, 27-apr-09 www.vishay.com 3 typical characteristics 25 c, unless otherwise noted output characteristics transconductance on-resistance vs. gate-to-source voltage 0 20 40 60 8 0 100 120 012345 v ds ) v ( e g a t l o v e c r u o s - o t - n i a r d - 6 v v gs = 10 v thr u 7 v - drain c u rrent (a) i d 25 c 0 24 4 8 72 96 120 0 1224364 8 60 - transcond u ctance (s) g fs t c = - 55 c 125 c i d - drain c u rrent (a) 0.00 0.01 0.02 0.03 0.04 0.05 4567 8 910 v gs - gate-to-so u rce v oltage ( v ) - on-resistance ( ) r ds(on) i d = 20 a 25 c 150 c transfer characteristics on-resistance vs. drain current capacitance 0 20 40 60 8 0 100 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 25 c - 55 c t c = 125 c 0.0045 0.0047 0.0049 0.0051 0.0053 0.0055 0204060 8 0 100 v gs = 10 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) c rss 0 1200 2400 3600 4 8 00 6000 01224364 8 60 v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c iss c oss
www.vishay.com 4 document number: 69536 s09-0703-rev. b, 27-apr-09 vishay siliconix sup90n06-6m0p typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature gate charge source-drain diode forward voltage 0 2 4 6 8 10 0 1734516 88 5 - gate-to-so u rce v oltage ( v ) q g v gs i d = 50 a v ds = 15 v - total gate charge (nc) v ds = 45 v v ds = 30 v 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 25 c 150 c v sd - so u rce-to-drain v oltage ( v ) 0.001 0.01 0.1 1.0 10 100 - so u rce c u rrent (a) i s 5 8 61 64 67 70 73 76 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) i d = 1 ma v ds (normalized) threshold voltage on-resistance vs. junction temperature maximum drain current vs. case temperature 0.5 0. 8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) i d = 20 a ( n ormalized) - on-resistance r ds(on) v gs = 10 v - 2.2 - 1.6 - 1.0 - 0.4 0.2 0. 8 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a v ariance ( v ) v gs(th) t j - j u nction temperat u re (c) i d = 5 ma t a v (s) 100 10 1 25 c 150 c 0.0001 0.01 0.001 1.0 1 . 0 1 0 0 0 0 . 0 i da v (a)
vishay siliconix sup90n06-6m0p document number: 69536 s09-0703-rev. b, 27-apr-09 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69536 . single pulse avalanche current capability vs. time 0 37 74 111 14 8 1 8 5 0 25 50 75 100 125 150 175 t c - case temperat u re (c) - drain c u rrent (a) i d package limited safe operating area 1000 10 0.1 1 10 100 0.1 100 t c = 25 c single p u lse - drain c u rrent (a) i d 1 100 ms dc 10 ms 1 ms v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified limited b y r * ds(on) normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance
document number: 71195 www.vishay.com revison: 01-nov-10 1 package information vishay siliconix to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm * m 3 2 1 l l(1) d h(1) q ? p a f j(1) b (1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x10-0416-rev. m, 01-nov-10 dwg: 5471
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