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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD819 description high collector-base breakdown voltage- : v (br)cbo = 1500v (min.) low collector saturation voltage- high switching speed applications designed for color tv horiz ontal output applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 5 v i c collector current-continuous 3.5 a i e emitter current-continuous -3.5 a p c collector power dissipation @t c =25 50 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD819 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.8a b 8.0 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 0.8a b 1.5 v i cbo collector cutoff current v cb = 500v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe dc current gain i c = 0.5a; v ce = 5v 8 c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 95 pf f t current-gain?bandwidth product i c = 0.1a; v ce = 10v 3 mhz t f fall time i cp = 3a; i b1( end) = 0.8a 1.0 s isc website www.iscsemi.cn |
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