QS6M3 transistors rev.b 1/7 2.5v drive nch+pch mosfet QS6M3 z structure silicon n-channel / p-channel mosfet z features 1) low on-resistance. 2) built-in g-s pr otection diode. 3) small surface mount package (tsmt6). z application power switching, dc / dc converter. z dimensions (unit : mm) each lead has same dimensions tsmt6 0.4 (1) (5) (3) (6) (2) (4) 1pin mark 2.8 1.6 1.9 2.9 0.95 0.95 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 abbreviated symbol : m03 z packaging specifications package code taping basic ordering unit (pieces) QS6M3 tr 3000 type z absolute maximum ratings (ta=25 c) parameter v dss symbol v gss i d i dp i s i sp p d c tch c tstg tr1 : nch tr2 : pch limits unit ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board drain-source voltage gate-source voltage drain current total power dissipation channel temperature storage temperature continuous pulsed continuous source current (body diode) pulsed ? 1 v 30 v 12 a 1.5 a 6.0 a 0.8 a 6.0 w / total ? 20 12 1.5 6.0 ? 0.75 ? 6.0 ? 1 ? 2 w / element 150 ? 55 to + 150 1.25 0.9 z equivalent circuit z thermal resistance rth (ch-a) 100 parameter symbol limits unit channel to ambient c / w / total 139 c / w / element ? ? mounted on a ceramic board (1) tr1 (nch) gate (2) tr2 (pch) source (3) tr2 (pch) gate (4) tr2 (pch) drain (5) tr1 (nch) source (6) tr1 (nch) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 2 ? 1 ? 1 (1) (6) (3) (4) (2) (5)
QS6M3 transistors rev.b 2/7 n-ch z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs = 12v, v ds = 0v v dd 15v 30 ?? vi d = 1ma, v gs = 0v ?? 1 av ds = 30v, v gs = 0v 0.5 ? 1.5 v v ds = 10v, i d = 1ma ? 170 230 i d = 1.5a, v gs = 4.5v ? 180 245 m ? i d = 1.5a, v gs = 4.0v ? 260 360 i d = 1.0a, v gs = 2.5v 1.0 ?? si d = 1.0a, v ds = 10v ? 80 ? pf v ds = 10v ? 25 15 ? pf v gs = 0v ? 7 ? pf f = 1mhz v gs = 4.5v r l = 15 ? r g = 10 ? ? 18 ? ns ? 15 ? ns ? 15 ? ns ? 1.6 ? ns ? 0.5 ? nc ? 0.9 ? nc v gs = 4.5v r l = 10 ? r g = 10 ? ?? nc i d = 1.5a ? ? ? ? ? ? ? ? ? i d = 1a, v dd 15v z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 3.2a, v gs = 0v parameter symbol min. typ. max. unit conditions ? forward voltage ? pulsed
QS6M3 transistors rev.b 3/7 p-ch z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs = 12v, v ds = 0v v dd ? 15v ? 20 ?? vi d = ? 1ma, v gs = 0v ??? 1 av ds = ? 20v, v gs = 0v ? 0.7 ?? 2.0 v v ds = ? 10v, i d = 1ma ? 155 215 i d = ? 1.5a, v gs = ? 4.5v ? 170 235 m ? i d = ? 1.5a, v gs = ? 4.0v ? 310 430 i d = ? 0.75a, v gs = ? 2.5v 1.0 ?? si d = ? 0.75a, v ds = ? 10v ? 270 ? pf v ds = ? 10v ? 40 35 ? pf v gs = 0v ? 10 ? pf f = 1mhz v gs = ? 4.5v r l = 20 ? r g = 10 ? ? 12 ? ns ? 45 ? ns ? 20 ? ns ? 3.0 ? ns ? 0.8 ? nc ? 0.85 ? nc v gs = ? 4.5v ?? nc i d = ? 1.5a i d = ? 0.75a, v dd ? 15v r l = 10 ? r g = 10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ??? 1.2 v i s = ? 0.75a, v gs = 0v parameter symbol min. typ. max. unit conditions forward voltage
QS6M3 transistors rev.b 4/7 n-ch z electrical characteristic curves 1 10 100 1000 0.01 0.1 1 10 100 drain-source voltage : v ds (a) capacitance : c (pf) ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 1 10 100 1000 0.01 0.1 1 10 drain current : i d (a) switching time : t (ns) ta = 25 c v dd = 15v v gs = 4.5v r g = 10 ? pulsed fig.2 switching characteristics t r t f t d (off) t d (on) 0 0.5 1 1.5 2 total gate charge : qg (nc) 0 1 2 3 4 5 6 gate-source voltage : v gs (v) ta = 25 c v dd = 15v i d = 1.5a r g = 10 ? pulsed fig.3 dynamic input characteristics 0.0 0.5 1.0 1.5 2.0 2.5 0.001 0.01 0.1 1 10 gate-source voltage : v gs (v) drain current : i d (a) fig.4 typical transfer characteristics v ds = 10v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0123456789 gate-source voltage : v gs (v) 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 static drain-source on-state resistance : r ds (on) ( m ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = 0.75a i d = 1.5a 0.01 0.1 1 10 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 1 10 0.1 0.01 0.1 1 10 drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.7 static drain-source on-state resistance vs. drain current ( ) v gs = 4.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 1 10 0.1 0.01 0.1 1 10 drain current : i d (a) v gs = 4.0v pulsed static drain-source on-state resistance : r ds (on) ( m ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 1 10 0.1 0.01 0.1 1 10 v gs = 2.5v pulsed drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c
QS6M3 transistors rev.b 5/7 p-ch z electrical characteristic curves 10 100 1000 10 0.01 0.1 1 10 100 drain-source voltage : ? v ds (v) capacitance : c (pf) ta = 25 c f = 1mhz v gs = 0v c iss c rss c oss fig.1 typical capacitance vs. drain-source voltage 1 10 100 1000 0.01 0.1 1 10 drain current : ? i d (a) switching time : t (ns) ta = 25 c v dd = ? 15v v gs = ? 4.5v r g = 10 ? pulsed t d (off) t d (on) t r t f fig.2 switching characteristics ta = 25 c v dd = ? 15v i d = ? 1.5a r g = 10 ? pulsed 0 0.5 1 1.5 2 2.5 3 3.5 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 gate-source voltage : ? v gs (v) fig.3 dynamic input characteristics 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 gate-source voltage : ? v gs (v) 0.001 0.01 0.1 1 10 drain current : ? i d (a) v ds = ? 10v pulsed fig.4 typical transfer characteristics ta = 75 c ta = ? 25 c ta = 25 c ta = 125 c 024681012 gate-source voltage : ? v gs (v) 0 100 200 300 400 500 static drain-source on-state resistance : r ds (on) ( m ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = ? 1.5a i d = ? 0.75a 0.0 0.5 1.0 1.5 2.0 source-drain voltage : ? v sd (v) 0.01 0.1 1 10 reverse drain current : ? i s (a) fig.6 source current vs. source-drain voltage ta = 25 c v gs = 0v pulsed 10 100 1000 10000 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) 0.1 1 10 fig.7 static drain-source on-state resistance vs. drain current ( ) v gs = ? 4.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 10 100 1000 10000 0.1 1 10 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) v gs = ? 4v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 10 100 1000 10000 0.1 1 10 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? ) v gs = ? 2.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c
QS6M3 transistors rev.b 6/7 n-ch z measurement circuit fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) tf t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd
QS6M3 transistors rev.b 7/7 p-ch z measurement circuit fig.3-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.3-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) tf t d(off) fig.4-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.4-2 gate charge waveform v g v gs charge q g q gs q gd
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / eupope / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2007 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21, saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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