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| jmnic product specification silicon pnp power transistors 2SA957 2sa958 description ? with to-220 package ? high breakdown voltage ? high power dissipation applications ? for general purpose applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2SA957 -150 v cbo collector-base voltage 2sa958 open emitter -200 v 2sa95 7 -150 v ceo collector-emitter voltage 2sa958 open base -200 v v ebo emitter-base voltage open collector -6 v i c collector current -2.0 a i b base current -1.0 a p t total power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA957 2sa958 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SA957 -150 v ceo(br) collector-emitter breakdown voltage 2sa958 i c =-25ma ,i b =0 -200 v v cesat collector-emitter saturation voltage i c =-0.7a; i b =-0.07a -1.5 v 2SA957 v cb =-150v; i e =0 i cbo collector cut-off current 2sa958 v cb =-200v; i e =0 -100 | a i ebo emitter cut-off current v eb =-6v; i c =0 -1.0 ma h fe dc current gain i c =-0.7a ; v ce =-10v 40 f t transition fre quency i c =-0.2a ; v ce =-12v 20 mhz switching times resistive load t r rise time 0.4 | s t s storage time 1.5 | s t f fall time i c =-1.0a i b1 =- i b2 =-0.1a r l =20 |? ;v cc =-20v 0.5 | s jmnic product specification 3 silicon pnp power transistors 2SA957 2sa958 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) |
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