CZD5103 npn epitaxial planar silicon transistor elektronische bauelemente 23-apr-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? description the CZD5103 is designed for high speed switching applications. features ? low saturation voltage, typically v ce(sat) = 0.15v at i c /i b = 3a/0.15a ? high speed switching, typically t f = 0.1 ? s at i c = 3a ? wide soa ? complements to czd1952 marking switching time test circuit absolute maximum ratings (t a = 25 c) parameter symbol ratings unit collector to base voltage v cbo 100 v collector to emitter voltage v ceo 60 v emitter to base voltage v ebo 5 v collector current (dc) i c 6 a collector current (pulse) i c 20 a total device dissipation (t a =25c) p d 1 w total device dissipation (t c =25c) p d 10 w junction temperature t j 150 storage temperature t stg -55 ~ 150 ref. millimete r ref. millimete r min. max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 a c d n o p g e f h k j m b d-pack (to-252) 5103 ???? ? 1 date code
CZD5103 npn epitaxial planar silicon transistor elektronische bauelemente 23-apr-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 100 - - v i c =50 a, i e =0 collector-emitter breakdown voltage v (br)ceo 60 - - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 5 - - v i e =50 a, i c =0 collector cut-off current i cbo - - 10 a v cb =100v, i e =0 emitter cut-off current i ebo - - 10 a v eb =5v, i c =0 collector-emitter sa turation voltage *v ce(sat) 1 - 0.15 0.3 v i c =3a, i b =0.15a *v ce(sat) 2 - - 0.5 v i c =4a, i b =0.2a base-emitter saturation voltage *v be(sat) 1 - - 1.2 v i c =3a, i b =0.15a *v be(sat) 2 - - 1.5 v i c =4a, i b =0.2a *dc current gain *h fe 1 120 - 270 v ce =2v, i c =1a *h fe 2 40 - - v ce =2v, i c =3a transition frequency f t - 210 - mhz v cb =10v, i e =-0.5a, f=30mhz output capacitance c ob - 80 - pf v ce =10v, i e =0, f=1mhz turn-on time t on - - 0.3 ? s i c =3a, r l =10 ? , i b1 =-i b2 =0.15a, v cc =30v storage time t stg - - 1.5 fall time t f - 0.1 0.3 *measured under pulse condition. pulse width Q 300 s, duty cycle Q 2%
CZD5103 npn epitaxial planar silicon transistor elektronische bauelemente 23-apr-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
CZD5103 npn epitaxial planar silicon transistor elektronische bauelemente 23-apr-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
