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vishay siliconix si4340ddy document number: 67583 s11-0860-rev. a, 02-mar-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual n-channel 20 v (d-s) mo sfet with schottky diode features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc converters, synchronous buck converters - game stations - notebook pc logic product summary v ds (v) r ds(on) ( ? ) i d (a) a q g (typ.) channel-1 20 0.0085 at v gs = 10 v 14.8 8.1 0.0115 at v gs = 4.5 v 12.8 channel-2 20 0.0070 at v gs = 10 v 22 8.4 0.0095 at v gs = 4.5 v 18.9 schottky product summary v ds (v) v sd (v) diode forward voltage i f (a) 20 0.55 v at 2.5 a 2 d 1 s 1 d 1 s 1 g 1 d 2 g 2 d 2 so-14 11 12 13 14 top view 2 3 4 1 s 2 d 2 s 2 d 2 s 2 d 2 8 9 10 5 6 7 ordering information: SI4340DDY-T1-GE3 (lead (pb)-free and halogen-free) g 1 s 1 d 1 n-channel 1 mosfet g 2 s 2 d 2 n-channel 2 mosfet schottky diode notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions for chann el 1 is 110 c/w and channel 2 is 87 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol channel-1 channel-2 unit drain-source voltage v ds 20 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 14.8 22 a t c = 70 c 11.8 17.6 t a = 25 c 12.1 b, c 16.3 b, c t a = 70 c 9.7 b, c 13 b, c pulsed drain current (t = 300 s) i dm 50 60 source-drain current diode current t c = 25 c i s 2.5 4.5 t a = 25 c 1.7 b, c 2.5 b, c single pulse avalanche current l = 0.1 mh i as 15 single pulse avalanche energy e as 11.25 mj maximum power dissipation t c = 25 c p d 35.4 w t c = 70 c 1.9 3.5 t a = 25 c 2 b, c 3 b, c t a = 70 c 1.3 b, c 1.9 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient b, d t ? 10 s r thja 53 62.5 35 42 c/w maximum junction-to-foot (drain) steady state r thjf 35 42 18 23
www.vishay.com 2 document number: 67583 s11-0860-rev. a, 02-mar-11 vishay siliconix si4340ddy this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 20 v v gs = 0 v, i d = 250 a ch-2 20 v ds temperature coefficient ? v ds /t j i d = 250 a ch-1 20 mv/c i d = 25 ma ch-2 22 v gs(th) temperature coefficient ? v gs(th) /t j i d = 250 a ch-1 - 4.4 i d = 25 ma ch-2 - 4.6 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1 2.5 v v ds = v gs , i d = 250 a ch-2 1 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na v ds = 0 v, v gs = 20 v ch-2 100 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v ch-1 1 a v ds = 20 v, v gs = 0 v ch-2 100 v ds = 20 v, v gs = 0 v, t j = 85 c ch-1 15 v ds = 20 v, v gs = 0 v, t j = 85 c ch-2 10 000 on-state drain current b i d(on) v ds ?? 5 v, v gs = 10 v ch-1 20 a v ds ?? 5 v, v gs = 10 v ch-2 30 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 11.5 a ch-1 0.0065 0.0085 ? v gs = 10 v, i d = 15.2 a ch-2 0.0060 0.0070 v gs = 4.5 v, i d = 10 a ch-1 0.0091 0.0115 v gs = 4.5 v, i d = 14 a ch-2 0.0077 0.0095 forward transconductance b g fs v ds = 10 v, i d = 11.5 a ch-1 28 s v ds = 10 v, i d = 15.2 a ch-2 44 dynamic a input capacitance c iss channel-1 v ds = 10 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 10 v, v gs = 0 v, f = 1 mhz ch-1 862 pf ch-2 956 output capacitance c oss ch-1 280 ch-2 363 reverse transfer capacitance c rss ch-1 116 ch-2 120 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 12 a ch-1 17.4 26 nc v ds = 10 v, v gs = 10 v, i d = 12 a ch-2 17.8 27 channel-1 v ds = 10 v, v gs = 4.5 v, i d = 12 a channel-2 v ds = 10 v, v gs = 4.5 v, i d = 12 a ch-1 8.1 12.5 ch-2 8.4 12.5 gate-source charge q gs ch-1 2.2 ch-2 2.6 gate-drain charge q gd ch-1 2.4 ch-2 2.5 gate resistance r g f = 1 mhz ch-1 2.2 4.4 ? ch-2 2.6 5.2
document number: 67583 s11-0860-rev. a, 02-mar-11 www.vishay.com 3 vishay siliconix si4340ddy this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 10 v, r l = 1 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? channel-2 v dd = 10 v, r l = 1 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? ch-1 18 35 ns ch-2 20 40 rise time t r ch-1 37 70 ch-2 34 65 turn-off delay time t d(off) ch-1 19 35 ch-2 21 40 fall time t f ch-1 10 20 ch-2 10 20 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 10 v, r l = 1 ? i d ? 10 a, v gen = 10 v, r g = 1 ? channel-2 v dd = 10 v, r l = 1 ? i d ? 10 a, v gen = 10 v, r g = 1 ? ch-1 9 18 ch-2 9 18 rise time t r ch-1 13 26 ch-2 13 26 turn-off delay time t d(off) ch-1 16 32 ch-2 15 30 fall time t f ch-1 8 16 ch-2 8 16 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 2.5 a ch-2 4.5 pulse diode forward current a i sm ch-1 50 ch-2 60 body diode voltage v sd i s = 5 a ch-1 0.76 1.2 v i s = 2.5 a ch-2 0.43 0.55 body diode reverse recovery time t rr channel-1 i f = 9.2 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 2.5 a, di/dt = 100 a/s, t j = 25 c ch-1 18 36 ns ch-2 18 36 body diode reverse recovery charge q rr ch-1 7 14 nc ch-2 7 14 reverse recovery fall time t a ch-1 8 ns ch-2 10 reverse recovery rise time t b ch-1 9 ch-2 9
www.vishay.com 4 document number: 67583 s11-0860-rev. a, 02-mar-11 vishay siliconix si4340ddy this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 4 v v gs = 2 v v gs = 3 v 0.004 0.006 0.008 0.010 0.012 0.014 0 10 20 30 40 50 r ds(on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 4 8 12 16 20 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 10 v v ds = 15 v v ds = 5 v i d = 12 a transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.8 1.6 2.4 3.2 4.0 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 240 480 720 960 1200 0 4 8 12 16 20 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) -on-resistance (normalized) t j - junction temperature ( c) i d = 11.5 a v gs = 10 v v gs = 4.5 v
document number: 67583 s11-0860-rev. a, 02-mar-11 www.vishay.com 5 vishay siliconix si4340ddy this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c -0.8 -0.6 -0.4 -0.2 0.2 0.4 -50-250 255075100125150 v gs(th) - variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 0 on-resistance vs. gate-to-source voltage single pulse power 0.000 0.006 0.012 0.018 0.024 0.030 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 11.5 a 0 10 20 30 40 50 0.001 0.01 0.1 1 10 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied 100 s 100 ms limited by r ds(on) * 1 ms i dm limited t c = 25 c single pulse bvdss limited 10 ms 10 s 1 s dc i d limited
www.vishay.com 6 document number: 67583 s11-0860-rev. a, 02-mar-11 vishay siliconix si4340ddy this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 3 6 9 12 15 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) power derating, junction-to-foot 0.0 0.7 1.4 2.1 2.8 3.5 0 25 50 75 100 125 150 power (w) t c - case temperature ( c) power derating junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 power (w) t a - ambient temperature ( c)
document number: 67583 s11-0860-rev. a, 02-mar-11 www.vishay.com 7 vishay siliconix si4340ddy this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =110 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted normalized thermal transient impedance, junction-to-foot 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
www.vishay.com 8 document number: 67583 s11-0860-rev. a, 02-mar-11 vishay siliconix si4340ddy this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 12 24 36 48 60 0.0 0.5 1.0 1.5 2.0 2.5 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 4 v v gs = 2 v v gs = 3 v 0.005 0.006 0.007 0.008 0.009 0.010 0 12 24 36 48 60 r ds(on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 4 8 12 16 20 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 10 v v ds = 15 v v ds = 5 v i d = 12 a transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 5.0 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 300 600 900 1200 1500 0 4 8 12 16 20 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 -50-250 255075100125150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) i d = 15.2 a v gs = 10 v v gs = 4.5 v
document number: 67583 s11-0860-rev. a, 02-mar-11 www.vishay.com 9 vishay siliconix si4340ddy this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage reverse current vs. junction temperature 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 -50-250 255075100125150 i r - reverse current (a) t j -temperature ( c) 16v 20v on-resistance vs. gate-to-source voltage single pulse power 0.000 0.006 0.012 0.018 0.024 0.030 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 15.2 a 0 16 32 48 64 80 0.001 0.01 0.1 1 10 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied 100 s 100 ms limited by r ds(on) * 1 ms i dm limited t c = 25 c single pulse bvdss limited 10 ms 10 s 1 s dc i d limited
www.vishay.com 10 document number: 67583 s11-0860-rev. a, 02-mar-11 vishay siliconix si4340ddy this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power derating junction-to-foot 0.0 1.3 2.6 3.9 5.2 6.5 0 255075100125150 power (w) t c - case temperature ( c) power derating junction-to-ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 power (w) t a - ambient temperature ( c)
document number: 67583 s11-0860-rev. a, 02-mar-11 www.vishay.com 11 vishay siliconix si4340ddy this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67583 . normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 7 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted normalized thermal transient impedance, junction-to-foot 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
? all leads 0.101 mm 0.004 e d e b a 1 a h l c 0.25 (gage plane) 1234567 14 13 12 11 10 9 8 package information vishay siliconix document number: 71193 19-sep-05 www.vishay.com 1
dim min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.38 0.51 0.015 0.020 c 0.18 0.23 0.007 0.009 d 8.55 8.75 0.336 0.344 e 3.8 4.00 0.149 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.50 0.93 0.020 0.037 ? 0 8 0 8 ecn: t-05766?rev. f, 19-sep-05 dwg: 5499
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
application note 826 vishay siliconix document number: 72607 www.vishay.com revision: 21-jan-08 23 application note recommended minimum pads for so-14 recommended minimum pads for so-14 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.322 (8.179) return to index return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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