TFDU2201 vishay semiconductors rev. a1.0, 17-may-00 1 (7) www.vishay.com document number 82539 low profile transceiver module photo pin diode and infrared emitter description the miniaturized TFDU2201 is an ideal pin diode transmitter combination in a unique package for applications in telecommunications like mobile phones and pagers. the device is mechanically designed for lowest profile with a height of only 2.8 mm. the device is designed to be compatible to the irda standard when using an external receiver ic and ired driver. package features package dimension: l 7.1 mm x w 4.55 mm x h 2.75 mm smd side view fast pin photo diode for sir and fir detector with high efficiency and high speed at low bias voltage only 30 ma ired peak current during transmission for irda sir low power standard applications mobile phones, pagers, personal digital assistants (pda), handheld battery operated equipment
TFDU2201 vishay semiconductors rev. a1.0, 17-may-00 2 (7) www.vishay.com document number 82539 ordering information part number qty / reel description TFDU2201tr1 750 orientated in carrier tape for side view in mounting TFDU2201tr3 2250 orientated in carrier tape for side view in mounting pin description pin symbol description i/o active 1 ired gnd ired cathode, ground, to be used as heat sink 2 ired gnd ired cathode, ground, to be used as heat sink 3 ired anode ired anode, to be driven by a current source 4 nc 5 nc 6 nc 7 d anode detector anode 8 d cathode detector cathode TFDU2201 side view
TFDU2201 vishay semiconductors rev. a1.0, 17-may-00 3 (7) www.vishay.com document number 82539 absolute maximum ratings parameter test conditions symbol min. typ. max. unit remarks photo pin diode, reverse voltage range v r 0.3 12 v photo pin diode, reverse photo current 10 ma average ired current i ired (dc) 100 ma repetitive pulsed ired current i ired (rp) 550 ma <90 m s, t on <20% ired, reverse voltage range v rired 0.3 5 v power dissipation p tot 200 mw see figure 3 junction temperature t j 125 ? ?????? ????????? ???? ????????? ? ?? ? ? ? ??????? ????????? ???? ? ??? ? ? ? ????????? ????????? ? ? ? ??? ? ?? ?? ? ??? ????? ???? ?????? ???? ?????? ????? ???? ?????? ????? ????????? ????? ? ? ? ???????? ?? ????? ? ???????? ?? ??? M? ?? ??M? ???? ????? ???? ???? ?? ???? ?????? ??? ???? ?????????? ??????????????? ?????? ??? ??? ????????? ???????? ?? ? ? ????? ????????? ??????? ??????? ???? ?????????? ???? ??? ?? ?? ???? ????? ??????????? ??????? ???? ???? ???? ??? ??M ? ???? ?? ???????? ????? ??????? ?????????? a | ? ? ? ? ? ? l = 875 nm s 1.0 1.2 1.8 na/ (mw/m 2 ) bias voltage range, detector v rev 12 v reverse leakage current 0.2 na spectral bandwidth 800 950 nm max. operating irradiance | a | ? ? ? ?? ? ? ? ? ? ? ?? ?? ? ??? ??? ????? ? w v r = 2 v, = 875 nm t r 40 ns fall time @load: r = 50 w v r = 2 v, = 875 nm t r 40 ns emitter forward current operating condition for low power irda operation i e = 4 to 28 mw/sr in | a | ? ? ? ?? ? ? ??? ?????? ???????? ? ?? ? ? ? ? ? ??? ?? ?? ???? a | ? ? ? ?? ?? ? ? ??? ?? ?? ???? ??????? ??????? ? ? ? ? ? ? ?? ?? ? ??? ??????? ?????????? l p 880 900 nm spectral emission bandwidth 45 nm optical rise/ falltime 2 mhz square wave signal (duty cycle 1:1) 38 ns
TFDU2201 vishay semiconductors rev. a1.0, 17-may-00 4 (7) www.vishay.com document number 82539 recommended smd pad layout 0.5 7 x 0.8 8 0.8 1 2.3 transceiver leads to be soldered symmetrically on pads figure 1. pad layout recommended solder profile time ( s ) temperature ( c ) 14874 5 0 30 60 90 120 150 180 210 240 0 50 100 150 200 250 300 350 2 - 4 5 c/s 10 s max. @ 230 5 c 90 s max. 120 - 180 s 2 - 4 5 c/s figure 2. recommended solder profile current derating diagram 0 100 200 300 400 500 600 40 20 0 20 40 60 80 100 120 140 peak operating current ( ma ) temperature ( 5 c ) 14875 current derating as a function of the maximum forward current of ired. maximum duty cycle: 25%. figure 3. current derating diagram
TFDU2201 vishay semiconductors rev. a1.0, 17-may-00 5 (7) www.vishay.com document number 82539 TFDU2201 side view package (mechanical dimensions) 14484
TFDU2201 vishay semiconductors rev. a1.0, 17-may-00 6 (7) www.vishay.com document number 82539 revision history: a0.2, 07/07/1999: new draft edition, for internal use only a1.0, 17/05/2000: first released version pin diode switching characteristics conditions typos corrected
TFDU2201 vishay semiconductors rev. a1.0, 17-may-00 7 (7) www.vishay.com document number 82539 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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