document number: 67520 www.vishay.com s11-0400-rev. a, 14-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel 1.8 v (g-s) mosfet spice device model SI4403CDY vishay siliconix description the attached spice model desc ribes the typical electrical characteristics of the p-channel vertical dmos. the subcircuit model is extracted and optimized over the - 55 c to + 125 c temperature ranges under the pulsed 0 v to 5 v gate drive. the sa turated output impedanc e is best fit at the gate bias near the threshold voltage. a novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched c gd model. all model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. characteristics ? p-channel vertical dmos ? macro model (subcircuit model) ?level 3 mos ? apply for both linear and switching application ? accurate over the - 55 c to + 125 c temperature range ? model the gate charge, transient, and diode reverse recovery characteristics subcircuit model schematic note this document is intended as a spice modeling guideline and do es not constitute a commercial product datasheet. designers shoul d refer to the appropriate datasheet of the same number for guaranteed specification limits. d s dbd c gs m 1 g 3 r 1 m 2 gx r g c gd gy etcv + C
www.vishay.com document number: 67520 2 s11-0400-rev. a, 14-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 spice device model SI4403CDY vishay siliconix notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions simulated data measured data unit static gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a 0.50 - v drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 9 a 0.0133 0.0125 ? v gs = - 2.5 v, i d = - 6 a 0.0150 0.0155 forward transconductance a g fs v ds = - 10 v, i d = - 9 a 45 40 s diode forward voltage v sd i s = - 3 a - 0.65 - 0.66 v dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 2360 2380 pf output capacitance c oss 345 340 reverse transfer capacitance c rss 286 280 total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 5 a 50 60 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 5 a 30 36.5 gate-source charge q gs 3.1 3.1 gate-drain charge q gd 9.9 9.9
document number: 67520 www.vishay.com s11-0400-rev. a, 14-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 spice device model SI4403CDY vishay siliconix comparison of model with measured data t j = 25 c, unless otherwise noted note dots and squares represent measured data. i d - drain current (a) v d s - drain-to- s ource voltage (v ) i d - drain current (a) v gs - g ate-to- s ource voltage (v) i d - drain current (a) c - capacitance (pf) v d s - drain-to- s ource voltage (v) q g - total g ate charge (nc) v gs - g ate-to- s ource voltage (v) i s - s ource current (a) v s d - s ource-to-drain voltage (v) r d s (on) - on-re s i s tance ( ) 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 5 v, 3.5 v, 3 v, 2.5 v, 2 v v gs = 1.5 v 0.010 0.014 0.018 0.022 0.026 0.030 0.0 6.0 12.0 18.0 24.0 30.0 v gs = 2.5 v v gs = 4.5 v 0 2 4 6 8 0 1326395265 i d = 5 a v d s = 10 v v d s = 15 v 0 2 4 6 8 10 0.0 0.4 0.8 1.2 1.6 2.0 t j = 125 c t j = 25 c t j = - 55 c 0 900 1800 2700 3600 4500 0 4 8 121620 c i ss c o ss c r ss 0.001 0.01 0.1 1 10 100 0.00.20.40.60.81.01.2 t j = 150 c t j = 25 c
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
