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| inchange semiconductor product specification silicon npn power transistors BUV46 BUV46a description ? ? with to-220c package ? high voltage ? fast switching applications ? general purpose switching ? switch mode power supplies ? electronic ballasts for fluorescent lighting pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (tc=25 ?? ) symbol parameter conditions value unit BUV46 850 v cbo collector-base voltage BUV46a open emitter 1000 v BUV46 400 v ceo collector-emitter voltage BUV46a open base 450 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 5 a i b base current 3 a p tot total power dissipation t c =25 ?? 70 w t j max.operating junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-case thermal resistance junction case 1.76 ??/w
inchange semiconductor product specification 2 silicon npn power transistors BUV46 BUV46a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BUV46 400 v ceo(sus) collector-emitter sustaining voltage BUV46a i c =0.1a ;i b =0 450 v BUV46 i c =2.5a ;i b =0.5a v cesat-1 collector-emitter saturation voltage BUV46a i c =2a ;i b =0.4a 1.5 v BUV46 i c =3.5a ;i b =0.7a v cesat-2 collector-emitter saturation voltage BUV46a i c =3a ;i b =0.6a 5.0 v BUV46 i c =2.5a; i b =0.5a v besat base-emitter saturation voltage BUV46a i c =2a; i b =0.4a 1.3 v i cer collector cut-off current v ce =v cex; r be =10 ? t c =125 ?? 0.1 1.0 ma i cex collector cut-off current v ce =v cex ;v be = -2.5 v t c =125 ?? 0.3 2.0 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma switching times t on turn-on time 1.0 | s t s storage time 3.0 | s t f fall time for BUV46 i c =2.5a;i b1 =-i b2 =0.5a;v cc =150v for BUV46a i c =2a;i b1 =-i b2 =0.4a;v cc =150v 0.8 | s inchange semiconductor product specification 3 silicon npn power transistors BUV46 BUV46a package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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