SSG4801 -5 a, -30 v, r ds(on) 50 m ? dual-p enhancement mode power mosfet elektronische bauelemente 19-jan-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5v. the device is suitable for use as a load switch or in pwm applications. it may be used in a common drain arrangement to from a bidirectional blocking switch. features ? simple drive requirement ? lower on-resistance ? low gate charge marking package information package mpq leadersize sop-8 2.5k 13? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 12 v continuous drain current 1 t a = 25c i d -5 a t a = 70c -4.2 pulsed drain current 2 i dm -30 a total power dissipation 1 t a = 25c p d 2 w linear derating factor 0.016 w / c operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-ambient 1 (max.) r ja 62.5 c / w notes 1. surface mounted on fr4 board, t 10sec. Q 2. pulse width 300 s, duty cycle 2 QQ % sop-8 ref. millimete r ref. millimete r min. max. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. 4801ss ????? ? ? = date code s1 g1 g2 s2 d1 d1 d2 d2
SSG4801 -5 a, -30 v, r ds(on) 50 m ? dual-p enhancement mode power mosfet elektronische bauelemente 19-jan-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min typ max unit test condition drain-source breakdown voltage bv dss -30 - - v v gs =0v, i d = -250ua gate threshold voltage v gs(th) -0.5 - -1.0 v v ds =v gs , i d = -250ua forward transconductance 2 g fs - 11 - s v ds = -5v, i d = -5a gate-source leakage current i gss - - 100 na v gs = 12v drain-source leakage current t j =25c i dss - - -1 a v ds = -24v, v gs =0v t j =55c - - -5 a v ds = -24v, v gs =0v static drain-source on-resistance 2 r ds(on) - - 50 m ? v gs = -10v, i d = -5a - - 65 v gs = -4.5v, i d = -4a - - 120 v gs = -2.5v, i d = -1a total gate charge 2 q g - 9.5 - nc v ds = -15v, i d = -5a, v gs = -4.5v gate-source chagre q gs - 2.0 - gate-drain (?miller?) change q gd - 3.1 - turn-on delay time 2 t d(on) - 12 - ns v ds = -15v, v gs = -10v r l =3 ? , r g =6 ? rise time t r - 4 - turn-off delay time t d(off) - 37 - fall time t f - 12 - input capacitance c iss - 952 - pf v ds = -15v v gs =0v f=1.0mhz output capacitance c oss - 103 - reverse transfer capacitance c rss - 77 - source-drain diode forward on voltage 2 v sd - - -1.2 v i s = -1.7a, v gs =0v notes 1 surface mounted on fr4 board, t 10sec. Q 2. pulse width 300 s, duty cycle 2 QQ %
SSG4801 -5 a, -30 v, r ds(on) 50 m ? dual-p enhancement mode power mosfet elektronische bauelemente 19-jan-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
SSG4801 -5 a, -30 v, r ds(on) 50 m ? dual-p enhancement mode power mosfet elektronische bauelemente 19-jan-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
