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irG4PH50KD insulated gate bipolar transistor with ultrafast soft recovery diode e g n-channel c v ces = 1200v v ce(on) typ. = 2.77v @v ge = 15v, i c = 24a pd- 91575b to-247ac short circuit rated ultrafast igbt parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 45 i c @ t c = 100c continuous collector current 24 i cm pulsed collector current 90 a i lm clamped inductive load current 90 i f @ t c = 100c diode continuous forward current 16 i fm diode maximum forward current 90 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 200 p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbfin (1.1 nm) 7/7/2000 parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 0.64 r jc junction-to-case - diode ??? ??? 0.83 c/w r cs case-to-sink, flat, greased surface ??? 0.24 ??? r ja junction-to-ambient, typical socket mount ??? ??? 40 wt weight ??? 6 (0.21) ??? g (oz) thermal resistance absolute maximum ratings w features features features features features high short circuit rating optimized for motor control, t sc =10s, v cc = 720v , t j = 125 c, v ge = 15v combines low conduction losses with high switching speed tighter parameter distribution and higher efficiency than previous generations igbt co-packaged with hexfred tm ultrafast, ultrasoft recovery antiparallel diodes latest generation 4 igbt's offer highest power density motor controls possible hexfred tm diodes optimized for performance with igbts. minimized recovery characteristics reduce noise, emi and switching losses this part replaces the irgph50kd2 and irgph50md2 products for hints see design tip 97003 benefits www.irf.com 1 www.datasheet.co.kr datasheet pdf - http://www..net/
irG4PH50KD 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 180 270 i c = 24a q ge gate - emitter charge (turn-on) ? 25 38 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) ? 70 110 v ge = 15v t d(on) turn-on delay time ? 87 ? t r rise time ? 100 ? t j = 25 c t d(off) turn-off delay time ? 140 300 i c = 24a, v cc = 800v t f fall time ? 200 300 v ge = 15v, r g = 5.0 ? e on turn-on switching loss ? 3.83 ? energy losses include "tail" e off turn-off switching loss ? 1.90 ? mj and diode reverse recovery e ts total switching loss ? 5.73 7.9 see fig. 9,10,18 t sc short circuit withstand time 10 ?? s v cc = 720v, t j = 125 c v ge = 15v, r g = 5.0 ? t d(on) turn-on delay time ? 67 ? t j = 150 c, see fig. 10,11,18 t r rise time ? 72 ? i c = 24a, v cc = 800v t d(off) turn-off delay time ? 310 ? v ge = 15v, r g = 5.0 ?, t f fall time ? 390 ? energy losses include "tail" e ts total switching loss ? 8.36 ? mj and diode reverse recovery l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 2800 ? v ge = 0v c oes output capacitance ? 140 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 53 ?? = 1.0mhz t rr diode reverse recovery time ? 90 135 ns t j = 25 c see fig. ? 164 245 t j = 125 c 14 i f = 16a i rr diode peak reverse recovery current ? 5.8 10 a t j = 25 c see fig. ? 8.3 15 t j = 125 c 15 v r = 200v q rr diode reverse recovery charge ? 260 675 nc t j = 25 c see fig. ? 680 1838 t j = 125 c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 120 ? a/s t j = 25 c see fig. during t b ? 76 ? t j = 125 c 17 switching characteristics @ t j = 25c (unless otherwise specified) ns ns parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ?? vv ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.91 ? v/ cv ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 2.77 3.5 i c = 24a v ge = 15v ? 3.28 ? vi c = 45a see fig. 2, 5 ? 2.54 ? i c = 24a, t j = 150 c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -10 ? mv/ cv ce = v ge , i c = 250a g fe forward transconductance 13 19 ? sv ce = 100v, i c = 24a i ces zero gate voltage collector current ?? 250 a v ge = 0v, v ce = 1200v ?? 6500 v ge = 0v, v ce = 1200v, t j = 150 c v fm diode forward voltage drop ? 2.5 3.5 v i c = 16a see fig. 13 ? 2.1 3.0 i c = 16a, t j = 150 c i ges gate-to-emitter leakage current ?? 100 na v ge = 20v electrical characteristics @ t j = 25 c (unless otherwise specified) www.datasheet.co.kr datasheet pdf - http://www..net/
irG4PH50KD www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1 10 v , collector-to-emitter volta g e (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j t = 150 c j 1 10 100 5 6 7 8 9 10 11 12 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j t = 150 c j 0.1 1 10 100 0 5 10 15 20 25 30 f, frequency (khz) load current (a) for both: duty cycle: 50% t = 125 c t = 9 0 c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: 40 www.datasheet.co.kr datasheet pdf - http://www..net/
irG4PH50KD 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) maximum dc collector current(a) c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) -60 -40 -20 0 20 40 60 80 100 120 140 160 1.5 2.0 2.5 3.0 3.5 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 48 c i = a 24 c i = a 12 c www.datasheet.co.kr datasheet pdf - http://www..net/
irG4PH50KD www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 960v g ge cc i = a 48 c i = a 24 c i = a 12 c 0 10 20 30 40 50 5.4 5.8 6.2 6.6 7.0 r , gate resistance (ohm) total switching losses (mj) g v = 960v v = 15v t = 25 c i = 24a cc ge j c fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 24a cc c 5.0 ? 1 10 100 0 1000 2000 3000 4000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res r g , gate resistance ( ? ) 800v 800v www.datasheet.co.kr datasheet pdf - http://www..net/
irG4PH50KD 6 www.irf.com 1 10 100 1000 1 10 100 1000 10000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter volta g e (v) i , collector current (a) ce c 0 10 20 30 40 50 0 5 10 15 20 i , collector current (a) total switching losses (mj) c r = ohm t = 150 c v = 960v v = 15v g j cc ge fig. 13 - typical forward voltage drop vs. instantaneous forward current fig. 11 - typical switching losses vs. collector current fig. 12 - turn-off soa 5.0 ? v cc = 800v 1 10 100 1000 0.0 2.0 4.0 6.0 8.0 fm t = 150 c t = 125 c t = 25 c j j j forward volta g e drop - v ( v ) instantaneous forward current ( a ) www.datasheet.co.kr datasheet pdf - http://www..net/
irG4PH50KD www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 100 200 300 100 1000 trr - (ns) f di /dt - ( a/ s ) i = 3 2 a i = 1 6a i = 8.0a f f f v = 200v t = 125 c t = 25 c r j j 0 300 600 900 1200 100 1000 f di /d t - ( a/ s ) rr q - (nc ) i = 32a i = 16a i = 8.0a f f f v = 200v t = 125 c t = 25 c r j j 10 100 1000 100 1000 f di /d t - ( a/ s ) di(rec)m /dt - (a/s) i = 32 a i =16a i = 8.0a f f f v = 200v t = 125 c t = 25 c r j j 0 10 20 30 40 100 1000 f di /dt - ( a/ s ) rrm i - (a) i = 8.0a i = 16a i = 32a f f f v = 200v t = 125 c t = 25 c r j j www.datasheet.co.kr datasheet pdf - http://www..net/
irG4PH50KD 8 www.irf.com t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+ 5 s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr icdt vcicdt www.datasheet.co.kr datasheet pdf - http://www..net/
irG4PH50KD www.irf.com 9 vg gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v

r l = 960v 4 x i c @25 c 0 - 480v
www.datasheet.co.kr datasheet pdf - http://www..net/
irG4PH50KD 10 www.irf.com dimensions in millimeters and (inches) conforms to jedec outline to-247ac ( to-3p ) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per a nsi y14.5m , 1982. 2 con trollin g dimen sion : inch. 3 dime nsions a re sho w n millimet ers (inch es). 4 con form s to jedec o utline to-247ac. lead assignments 1 - gat e 2 - collecto r 3 - emitt er 4 - collecto r * lo nge r lea ded (20m m ) version available (to-247ad) to order add "-e" suffix to part number repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 5.0 ? (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 7/00 www.datasheet.co.kr datasheet pdf - http://www..net/

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