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miniskiip ? 3 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter skiip 35NAB12T4V1 features

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" # $ %&'(') typical applications* * " )& +, " - " .( +/ remarks , % 0 , 1 2
" * * -"$ - 2 .)(3 -4$ 5 " - 2 6 7 " $ * 8 9.(: 5 --$ " 2 ;: $$$ <.(:37 nab absolute maximum ratings 2 )( 30
" symbol conditions values units igbt - inverter, chopper , %6 .):: , 2 )( 5>:7 3 &> 5()7 ? .(: , %6 @ ): , 8 ; : $$$ < .>( 3 diode - inverter, chopper 1 2 )( 5>:7 3 &: 5a7 1? .(: 8 ; : $$$ < .>( 3 diode - rectifier , ? .&:: , 1 2 >: 3 &. 16? " 2 .: -0 .a: 30 8 2 )( 3 >:: b " 2 .: -0 .a: 30 8 2 )( 3 ):: b 8 ; : $$$ < .(: 3 module ?6 " " - 5): c "7 a: ; : $$$ < .)( 3 , 0 . -$ )(:: , characteristics 2 )( 30
" symbol conditions min. typ. max. units igbt - inverter, chopper , % - 2 (: 0 8 2 )( 5.(:7 3 .0a( 5)0)(7 )0:( 5)0(7 , , %5
7 , % 2 , % 0 2 ) - ( (0a &0( , , %5d7 8 2 )( 5.(:7 3 :0a 5:0>7 :0e 5:0a7 , 8 2 )( 5.(:7 3 ). 5'.7 )' 5''7 -f , % 2 )( ,0 , % 2 : ,0 2 . ?!g )0>> 1 , % 2 )( ,0 , % 2 : ,0 2 . ?!g :0). 1 , % 2 )( ,0 , % 2 : ,0 2 . ?!g :0.& 1
58;7 " :0>. hc/ 57 &: , 2 &:: ,0 , % 2 @ .( , '( 57 - 2 (: 0 8 2 .(:3 '>: 2 2 .( f &: % * & -i % 0> -i diode - inverter, chopper , 1 2 , % 1- 2 (: 0 8 2 )( 5.(:7 3 )0)( 5)0)7 )0(( 5)0(7 , , 5d7 8 2 )( 5.(:7 3 .0' 5:0e7 .0( 5.0.7 , 8 2 )( 5.(:7 3 .e 5)&7 ). 5)a7 -f
58;7 " :0e( hc/ ? ( j 1- 2 (: 0 , 2 &:: , a0& k % , % 2 : ,0 8 2 .(: 3 '0 -i 1 c 2 .:: ck diode - rectifier , 1 1- 2 '( 0 8 2 )( 3 .0. , , 5d7 8 2 .(: 3 :0a , 8 2 .(: 3 .. -f
58;7 " :0e hc/ temperature sensor ' l0 2 )( 5.::7 3 .:::5.&>:7 f mechanical data e( ? ? m ) )0( n- skiip 35NAB12T4V1 converter, inverter, brake 1 29-10-2008 lan ? by semikron
fig. 1 typ. output characteristic fig. 2 typ. rated current vs. temperature i c = f (t s ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic skiip 35NAB12T4V1 converter, inverter, brake 2 29-10-2008 lan ? by semikron
fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance of igbt and diode fig. 10 cal diode forward characteristic fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. input bridge forward characteristic skiip 35NAB12T4V1 converter, inverter, brake 3 29-10-2008 lan ? by semikron
"0 - this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. * the specifications of our components may not be considered as an assurance of component characteristics. components have to be tested for the respective application. adjustments may be necessary. the use of semikron products in life support appliances and systems is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our personal. skiip 35NAB12T4V1 converter, inverter, brake 4 29-10-2008 lan ? by semikron

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Price & Availability of 35NAB12T4V1

Part #	Manufacturer	Description	Price	BuyNow Qty.
SKIIP 35NAB12T4V1 77R2482	SEMIKRON	Igbt Module, Six, 1.2Kv, 62A; Continuous Collector Current:62A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SKIIP 35NAB12T4V1	100: USD83.66 50: USD88.89 25: USD90.19	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
SKIIP 35NAB12T4V1 25231470 SKIIP35NAB12T4V1	SEMIKRON	Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw	8: USD247.12 3: USD272.05 1: USD308.9	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
SKIIP35NAB12T4V1	SEMIKRON			165

Part #	Manufacturer	Description	Price	BuyNow Qty.
SKIIP35NAB12T4V1	SEMIKRON	SKIIP35NAB12T4V1		0

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