data sheet 1 rev. 1.1, 2008-03-20 BSP615S2L opti mos power-transistor product summary v ds 55 v r ds ( on ) 90 m i d 2.8 a feature n-channel enhancement mode logic level sot 223 marking 2n615l type package ordering code BSP615S2L sot 223 on request maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 2.8 2.3 a pulsed drain current t a =25c i d puls 11 gate source voltage v gs 20 v power dissipation t a =25c p tot 1.8 w operating and storage temperature t j , t st g -55... +150 c iec climatic category; din iec 68-1 55/150/00 ? green product (rohs compliant) ? aec qualified
BSP615S2L data sheet 2 rev. 1.1, 2008-03-20 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point (pin 4) r thjs - 19 23 k/w thermal resistance, chip to ambient air: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 120 70 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 55 - - v gate threshold voltage, v gs = v ds i d =12a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds =55v, v gs =0v, t j =25c v ds =55v, v gs =0v, t j =125c i dss - - 0.1 10 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 10 100 na drain-source on-state resistance v gs =4.5v, i d =1.4a r ds(on) - 86 150 m drain-source on-state resistance v gs =10v, i d =1.4a r ds(on) - 67 90 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
data sheet 3 rev. 1.1, 2008-03-20 BSP615S2L electrical characteristics parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =2.3a 2.7 5.4 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 249 330 pf output capacitance c oss - 58 78 reverse transfer capacitance c rss - 22 33 turn-on delay time t d(on) v dd =30v, v gs =4.5v, i d =2.8a, r g =24 - 7.8 12 ns rise time t r - 24 36 turn-off delay time t d(off) - 22 33 fall time t f - 23 34 gate charge characteristics gate to source charge q gs v dd =40v, i d =2.8a - 0.8 1.1 nc gate to drain charge q gd - 2.5 3.8 gate charge total q g v dd =40v, i d =2.8a, v gs =0 to 10v - 7.5 10 gate plateau voltage v (p lateau ) v dd =40v, i d =2.8a - 3 - v reverse diode inverse diode continuous forward current i s t a =25c - - 2.8 a inv. diode direct current, pulsed i sm - - 11 inverse diode forward voltage v sd v gs =0v, i f =2.8a - 0.8 1.1 v reverse recovery time t rr v r =30v, i f = l s , d i f /d t =100a/s - 30 38 ns reverse recovery charge q rr - 30 38 nc
BSP615S2L data sheet 4 rev. 1.1, 2008-03-20 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 w 2.4 BSP615S2L p tot 2 drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 c 160 t c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 a 3 BSP615S2L i d 4 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w BSP615S2L z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = -- 10 -1 10 0 10 1 10 2 v v ds -2 10 -1 10 0 10 1 10 2 10 a BSP615S2L i d r d s ( on) = v d s / i d dc 10 ms 1 ms t p = 120.0 s
data sheet 5 rev. 1.1, 2008-03-20 BSP615S2L 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 a 7 BSP615S2L i d v gs [v] a a 2.6 b b 2.8 c c 3.0 d d 3.2 e e 3.4 f f 3.6 g g 3.8 h h 4.0 i i 4.5 j p tot = 1.8 w j 10.0 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 1 2 3 4 a 5.5 i d 0 20 40 60 80 100 120 140 160 180 200 220 240 m 300 BSP615S2L r ds(on) v gs [v] = e e 3.4 f f 3.6 g g 3.8 h h 4.0 i i 4.5 j j 10.0 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 v 4 v gs 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 4.8 a 5.6 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 1 2 3 4 a 6 i d 0 1 2 3 4 5 6 s 8 g fs
BSP615S2L data sheet 6 rev. 1.1, 2008-03-20 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 1.4 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 20 40 60 80 100 120 140 160 180 200 220 240 m 280 BSP615S2L r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 160 t j 0 0.5 1 1.5 v 2.5 v gs(th) 12 a 60 a 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 1 10 2 10 3 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a BSP615S2L i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
data sheet 7 rev. 1.1, 2008-03-20 BSP615S2L 13 typ. gate charge v gs = f ( q gate ) parameter: i d = 2.8 a pulsed 0 2 4 6 8 nc 12 q gate 0 2 4 6 8 10 12 v 16 BSP615S2L v gs 0,8 v ds max ds max v 0,2 14 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 c 180 t j 50 52 54 56 58 60 62 v 66 BSP615S2L v (br)dss
BSP615S2L package outlines data sheet 8 rev. 1.1, 2008-03-20 1 package outlines figure 1 sot 223 green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). gps05560 12 3 3 4 ?.1 0.0 4 0.5 min. 0.28 0.1 max. 15? max. 6.5 ?.2 a 4.6 2.3 0.7 ?.1 0.25 m a 1.6 ?.1 7 ?.3 b 0.25 m ?.2 3.5 b 0...10? for further information on alternativ e packages, please vi sit our website: http://www.infineon.com/packages . dimensions in mm
data sheet 9 rev. 1.1, 2008-03-20 BSP615S2L revision history 2 revision history revision date changes 1.1 2008-03-20 initial vers ion of rohs-compliant derivate of BSP615S2L page 1: aec certified statement added page 1 and 8: added rohs compliance statement and green product feature page 1 and 8: package changed to rohs compliant version page 9-10: added revision history, updated legal disclaimer
edition 2008-03-20 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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