500v n-channel mosfet FQD5N50 parameter symbol value unit drain-source voltage v dss 500 v drain current - continuous i d 3.5 a drain current - pulsed i dm 14 a gate-source voltage v gss 30 v power dissipation p d 50 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c description parameter symbol test conditions min. typ. max. unit drain-source breakdown voltage bv dss v gs = 0v, i d =250 a 500 v zero gate voltage drain current i dss v ds =500v, v gs =0v 1.0 ua gate-body leakage current, forward i gssf v gs =30v, v ds =0v 100 na gate-body leakage current, reverse i gssr v gs = -30v, v ds =0v -100 na gate threshold voltage v gs(th) v ds = v gs , i d =250 a 3.0 5.0 v static drain-source on-resistance r ds(on) v gs = 10 v, i d = 1.75 a 1.8 w drain-source diode forward voltage v sd v gs = 0 v, i s = 3.5 a 1.4 v these n-channel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply. electrical characteristics absolute maximum ratings( ta = 25 c) o ( ta = 25 c) o to-252 tiger electronic co.,ltd
product specification 500v n-channel mosfet FQD5N50 typical characteristics
|
