document number: 89168 for technical questions within your region, please contact one of the following: www.vishay.com revision: 08-sep-09 pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com 1 dual trench mos barrier schottky rectifier ultra low v f = 0.46 v at i f = 5 a vt3080c, vft3080c , vbt3080c, vit3080c vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab, ito-220ab, and to-262aa package) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency converters, switching power supplies, freewheeling diodes, or-ing diode, dc-to-dc converters and reverse battery protection. mechanical data case: to-220ab, ito-220ab, to-263ab and to-262aa molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 2 01 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 15 a v rrm 80 v i fsm 150 a v f at i f = 15 a 0.65 v t j max. 150 c to-220ab 1 2 3 1 k 2 3 to-263ab 1 2 k to-262aa pin 1 pin 2 k heatsink pin 1 pin 2 case pin 3 pin 1 pin 2 pin 3 pin 1 pin 2 pin 3 k tmbs ? ito-220ab 1 2 3 vt3080c vft3080c vit3080c vbt3080c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vt3080c vft3080c vbt3080c vit3080c unit maximum repetitive peak reverse voltage v rrm 80 v maximum average forward rectified current (fig. 1) per device i f(av) 30 a per diode 15 peak forward surge curr ent 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a non-repetitive avalanche energy at t j = 25 c, l = 60 mh e as 160 mj peak repetitive reverse current at t p = 2 s, 1 khz, t j = 38 c 2 c per diode i rrm 1.0 a isolation voltage (ito-220ab only) from terminal to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical questions wi thin your region, please contact one of the following: document number: 89168 2 pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com revision: 08-sep-09 vt3080c, vft3080c, vbt3080c, vit3080c vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fi g. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 80 (minimum) - v instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.52 - v i f = 7.5 a 0.58 - i f = 15 a 0.75 0.82 i f = 5 a t a = 125 c 0.46 - i f = 7.5 a 0.52 - i f = 15 a 0.65 0.70 reverse current per diode v r = 80 v t a = 25 c i r (2) 30 700 a t a = 125 c 20 35 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vt3080c vft3080c vbt3080c vit3080c unit typical thermal resistance per diode r jc 2.5 6.0 2.5 2.5 c/w per device 2.0 5.0 2.0 2.0 ordering information (example) package preferred p/n unit weight (g) p ackage code base quantity delivery mode to-220ab vt3080c-e3/4w 1.89 4w 50/tube tube ito-220ab vft3080c-e3/4w 1.76 4w 50/tube tube to-263ab vbt3080c-e3/4w 1.39 4w 50/tube tube to-263ab vbt3080c-e3/8w 1.39 8w 800/reel tape and reel to-262aa vit3080c-e3/4w 1.46 4w 50/tube tube case temperat u re (c) 35 25 0 0 75 175 a v erage for w ard c u rrent (a) 25 100 150 5 50 125 10 30 20 resisti v e or ind u cti v e load v (b,i)t30 8 0c v ft30 8 0c 15 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 1.0 a v erage for w ard c u rrent (a) 14 0 0 8 1 8 a v erage po w er loss ( w ) 212 2 416 61014 8 4 d = t p /t t p t 6 d = 0. 8 12 10
document number: 89168 for technical questions within your region, please contact one of the following: www.vishay.com revision: 08-sep-09 pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com 3 vt3080c, vft3080c , vbt3080c, vit3080c vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical junc tion capacitance per diode fig. 6 - typical transient thermal impedance per device t a = 150 c t a = 125 c t a = 25 c instantaneo u s for w ard v oltage ( v ) 100 0.1 0 0.6 1.2 instantaneo u s for w ard c u rrent (a) 0.2 0. 8 1 0.4 1.0 t a = 100 c 10 percent of rated peak re v erse v oltage ( % ) 100 0.001 20 40 100 instantaneo u s re v erse c u rrent (ma) 50 1 30 60 10 90 70 0.1 0.01 8 0 t a = 150 c t a = 125 c t a = 25 c t a = 100 c re v erse v oltage ( v ) 10 000 10 0.1 100 j u nction capacitance (pf) 1 100 10 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 1000 t - p u lse d u ration (s) 10 0.1 0.01 10 100 transient thermal impedance (c/ w ) 0.1 1 v (b,i)t30 8 0c v ft30 8 0c j u nction to case 1
www.vishay.com for technical questions wi thin your region, please contact one of the following: document number: 89168 4 pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com revision: 08-sep-09 vt3080c, vft3080c, vbt3080c, vit3080c vishay general semiconductor new product package outline dimensions in inches (millimeters) to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.3 8 ) 0.105 (2.67) 0.095 (2.41) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) to-262aa 0.401 (10.19) 0.3 8 1 (9.6 8 ) 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) k 123 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) pi n 0.411 (10.45) max. 0.250 (6.35) mi n . 30 (typ.) (ref.) 0.035 (0.90) 0.02 8 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37) to-263ab mountin g pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n .
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