document number: 89241 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual trench mos barrier schottky rectifier ultra low v f = 0.46 v at i f = 5 a vt3080c, VIT3080C vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder bath temperature 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in high frequency dc/dc converters, switching power supplies, freewheeling diodes, or-ing diode, and reserve battery protection. mechanical data case: to-220ab and to-262aa molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade base p/nhm3 - halogen-free, rohs compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 15 a v rrm 80 v i fsm 150 a v f at i f = 15 a 0.65 v t j max. 150 c to-220ab 1 2 3 1 k 2 3 to-262aa pin 1 pin 2 pin 3 k pin 1 pin 2 case pin 3 tmbs ? vt3080c VIT3080C maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vt3080c VIT3080C unit maximum repetitive pe ak reverse voltage v rrm 80 v maximum average forward rectified current (fig. 1) per device i f(av) 30 a per diode 15 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 150 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89241 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vt3080c, VIT3080C vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.52 - v i f = 7.5 a 0.58 - i f = 15 a 0.75 0.82 i f = 5 a t a = 125 c 0.46 - i f = 7.5 a 0.52 - i f = 15 a 0.65 0.70 reverse current per diode v r = 80 v t a = 25 c i r (2) 30 700 a t a = 125 c 20 35 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vt3080c VIT3080C unit typical thermal resistance per diode r jc 2.5 c/w per device 2.0 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab vt3080c-m3/4w 1.89 4w 50/tube tube to-262aa VIT3080C-m3/4w 1.46 4w 50/tube tube to-220ab (1) vt3080chm3/4w 1.89 4w 50/tube tube to-262aa (1) VIT3080Chm3/4w 1.46 4w 50/tube tube
document number: 89241 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vt3080c, VIT3080C vishay general semiconductor new product ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power dissipation characteristics fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical transient thermal impedance fig. 6 - typical j unction capacitance case temperature (c) 35 25 0 0 75 175 average forward current (a) 25 100 150 5 50 125 10 30 20 resistive or inductive load 15 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 1.0 average forward current (a) 14 0 08 18 average power loss (w) 212 2 416 61014 8 4 d = t p /t t p t 6 d = 0.8 12 10 t a = 150 c t a = 125 c t a = 25 c instantaneous forward voltage (v) 100 0.1 0 0.6 1.2 instantaneous forward current (a) 0.2 0.8 1 0.4 1.0 t a = 100 c 10 percent of rated peak reverse voltage (%) 100 0.001 20 40 100 instantaneous reverse current (ma) 50 1 30 60 10 90 70 0.1 0.01 80 t a = 150 c t a = 125 c t a = 25 c t a = 100 c t - pulse duration (s) 10 0.1 0.01 10 100 transient thermal impedance (c/w) 0.1 1 junction to case 1 reverse voltage (v) 10 000 10 0.1 100 junction capacitance (pf) 1 100 10 t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 1000
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89241 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vt3080c, VIT3080C vishay general semiconductor new product package outline dimensions in inches (millimeters) to-220ab 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) to-262aa 0.401 (10.19) 0.381 (9.68) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) k 123 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) pi n 0.411 (10.45) max. 0.250 (6.35) mi n . 30 (typ.) (ref.) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37)
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