DMP3056LSD document number: ds31420 rev. 6 - 2 1 of 4 www.diodes.com september 2008 ? diodes incorporated DMP3056LSD new product dual p-channel enhancement mode field effect transistor features ? dual p-channel mosfet ? low on-resistance ? 45m ? @ v gs = -10v ? 65m ? @ v gs = -4.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 2) ? "green" device (note 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sop-8l ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals connections: see diagram ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.072g (approximate) sop-8l d 2 s 2 g 2 d 1 s 1 g 1 p-channel mosfet p-channel mosfet s1 d2 s2 d1 g2 g1 d1 d2 internal schematic top view top view maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -30 v gate-source voltage v gss 20 v drain current (note 1) steady state t a = 25c t a = 70c i d -6.9 -5.8 a pulsed drain current (note 3) i dm -24 a thermal characteristics characteristic symbol value unit total power dissipation (note 1) p d 2.5 w thermal resistance, junction to ambient (note 1) r ja 50 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 1. device mounted on 2 oz., 1? x 1? copper pads on 2? x 2? fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. 4. diodes inc.'s "green" policy c an be found on our website at http:// www.di odes.com/products/l ead_free/index.php.
DMP3056LSD electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -1 a v ds = -30v, v gs = 0v gate-source leakage i gss ? ? 100 800 na v gs = 20v, v ds = 0v v gs = 25v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) -1 1.7 -2.1 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? ? ? ? 45 65 m v gs = -10v, i d = -6.0a v gs = -4.5v, i d = -5.0a forward transconductance g fs ? 8 ? s v ds = -10v, i d = -5.3a diode forward voltage (note 5) v sd -0.5 ? -1.2 v v gs = 0v, i s = -1.7a dynamic characteristics input capacitance c iss ? 722 ? pf output capacitance c oss ? 114 ? pf reverse transfer capacitance c rss ? 92 ? pf v ds = -25v, v gs = 0v f = 1.0mhz gate resistance r g ? 3.3 ? v ds = 0v, v gs = 0v f = 1.0mhz switching characteristics q g ? 6.8 ? nc v ds = -15v, v gs = -4.5v, i d = -6a total gate charge q g ? 13.7 ? gate-source charge q gs ? 1.6 ? gate-drain charge q gd ? 4.2 ? nc v ds = -15v, v gs = -10v, i d = -6a turn-on delay time t d(on) ? 6.4 ? rise time t r ? 5.3 ? turn-off delay time t d(off) ? 26.5 ? fall time t f ? 14.7 ? ns v ds = -15v, v gs = -10v, i d = -1a, r g = 6.0 new product notes: 5. short duration pulse test used to minimize self-heating effect. fig. 1 typical output characteristics 0 1 2 3 4 5 6 7 8 9 10 11 12 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v , drain-source voltage (v) ds -i , d r ai n c u r r e n t (a) d v = -10v gs v = -4.5v gs v = -3.0v gs v = -2.5v gs v = -1.5v v = -1.0v gs gs fig. 2 typical transfer characteristics 0 1 2 3 4 5 6 7 8 9 10 -v , gate source voltage (v) gs -i , d r ain c u r r en t (a) d 1 1.5 2 2.5 3 3.5 4 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v pulsed ds DMP3056LSD document number: ds31420 rev. 6 - 2 2 of 4 www.diodes.com september 2008 ? diodes incorporated
DMP3056LSD 0.01 0.1 0.1 1 10 -i , drain-source current (a) d fig. 3 on-resistance vs. drain current & gate voltage r , s t a t i c d r ain-s o u r c e on-resistance ( ) ds(on) v = -10v gs v = -4.5v gs 0 0.01 0.02 0.03 0.04 0.05 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , static drain-source on-resistance ( ) ds(on) fig. 4 static drain-source on-resistance vs. ambient temperature v = -10v i = -6.0a gs d v = -4.5v i = -5.0a gs d 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a fig. 5 gate threshold variation vs. ambient temperature -v , g a t e t h r es h o ld v o l t a g e (v) th i = -250a d fig. 6 typical total capacitance 0 5 10 15 20 25 30 -v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) 10 100 1,000 10,000 c iss c oss c rss f = 1mhz 0.0001 0.001 0.01 0.1 1 10 -v , source-drain voltage (v) sd fig. 7 reverse drain current vs. source-drain voltage -i , s o u r c e c u r r en t (a) s t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0 0.2 0.4 0.6 0.8 1 1.2 new product DMP3056LSD document number: ds31420 rev. 6 - 2 3 of 4 www.diodes.com september 2008 ? diodes incorporated
DMP3056LSD document number: ds31420 rev. 6 - 2 4 of 4 www.diodes.com september 2008 ? diodes incorporated DMP3056LSD ordering information (note 6) part number case packaging DMP3056LSD-13 sop-8l 2500/tape & reel notes: 6. for packaging deta ils, go to our website at http://www.di odes.com/datasheets/ap02007.pdf . marking information new product top view logo part no. year : "07" =2007 "08" =2008 xth week: 01~52 1 4 8 5 p3056ld yy ww package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. sop-8l dim min max a - 1.75 a1 0.08 0.25 a2 1.30 1.50 a3 0.20 typ. b 0.3 0.5 d 4.80 5.30 e 5.79 6.20 e1 3.70 4.10 e 1.27 typ. h - 0.35 l 0.38 1.27 0 8 all dimensions in mm gauge plane seating plane detail a detail a e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27
|
