inchange semiconductor isc product specification isc silicon npn power transistor BDY72 description contunuous collector current-i c = 3a collector power dissipation- : p c = 25w @t c = 25 collector-emitter sustaining voltage- : v ceo(sus) = 120v(min) applications designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 120 v v cex collector-emitter voltage v be = -1.5v 150 v v cer collector-emitter voltage r be = 100 130 v v ebo emitter-base voltage 7 v i c collector current-continuous 3 a i b b base current-continuous 2 a p c collector power dissipation@t c =25 25 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 7.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BDY72 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 120 v v cer(sus) collector-emitter sustaining voltage i c = 100ma; r be = 100 130 v v cex(sus) collector-emitter sustaining voltage i c = 100ma; v be = -1.5v 150 v v ce (sat) collector-emitter saturation voltage i c = 0.5a; i b = 50ma 6.0 v v be( on ) base-emitter on voltage i c = 0.5a; v ce = 4v 1.7 v i ceo collector cutoff current v ce = 140v; i b = 0 10 ma i cex collector cutoff current v ce = 130v; v be(off) = 1.5v v ce = 130v; v be(off) = 1.5v, t c =150 1.0 5.0 ma i ebo emitter cutoff current v eb = 7v; i c = 0 1.0 ma h fe dc current gain i c = 0.5a; v ce = 4v 60 180 f t current gain-bandwidth product i c = 0.2a; v ce = 10v 0.8 mhz isc website www.iscsemi.cn 2
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