e l ek tr on isch e b a u e lemen te smg 2314 3.5a, 20 v ,r ds(on) 75m n-channel enhancement mode power mos.fet [ description features marking : 2314 the SMG2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extemely efficient and cost-effectiveness device. the SMG2314 is universally used for all commercial-industrial applications. absolute maximum ratings dim min max a 2.70 3.10 b 1. 4 0 1. 6 0 c 1.00 1.30 d 0.35 0.50 g 1.70 2. 1 0 h 0.00 0.10 j 0.10 0.26 k 0. 2 0 0. 6 0 l 0.85 1. 1 5 s 2. 40 2.8 0 all dimension in mm sc-59 http://www.secosgmbh.com/ any changing of specification will not be informed individual s g d b l a 1 3 2 top view h c j k gate source drain 01 -jun-2002 rev. a page 1 of 4 * low on-resistance * capable of 2.5v gate drive d g s t o t a l p o w e r d i s s i p a t i o n l i n e a r d e r a t i n g f a c t o r o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e c o n t i n u o u s d r a i n c u r r e n t , v g s @ 4 . 5 v c o n t i n u o u s d r a i n c u r r e n t , v g s @ 4 . 5 v p u l s e d d r a i n c u r r e n t t h e r m a l r e s i s t a n c e j u n c t i o n - a m b i e n t 3 a v v a a i d @ t a = 7 0 / w c w / c c w v d s v g s i d @ t a = 2 5 i d m p d @ t a = 2 5 t j , t s t g r t h j - a 2 0 1 2 3 . 5 2 . 8 1 0 1 . 3 8 0 . 0 1 - 5 5 ~ + 1 5 0 9 0 3 3 o o o c o c o c o m a x . 1 , 2 par am et er sy m b o l rat i n g s un i t th er m al dat a par am et er sy m b o l rat i n g s un i t rohs compliant product
e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) t o t a l g a t e c h a r g e r d s ( o n ) v v / v n a u a u a n c n s p f m [ v g s = 0 v , i d = 2 5 0 u a v d s = v g s , i d = 2 5 0 u a r e f e r e n c e t o 2 5 , i d = 1 m _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 3 7 0 _ _ _ _ c o 2 0 0 . 0 2 0 . 5 1 . 2 0 1 0 0 1 1 0 7 5 4 0 . 7 2 6 8 1 0 3 2 3 0 5 5 4 0 c o 7 v g s = 0 v v d s = 2 0 v f = 1 . 0 m h z v d d = 1 5 v i d = 1 a v g s = 5 v r g = 3 . 3 r d = 1 5 [ [ i d = 3 a v d s = 1 6 v v g s = 4 . 5 v v g s = 4 . 5 v , i d = 3 . 5 a v g s = 1 2 v v d s = 2 v , v g s = 0 v d s = 1 6 v , v g s = 0 p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e b r e a k d o w n v o l t a g e t e m p . c o e f f i c i e n t g a t e t h r es h o l d vo l t a g e g a t e - s o u r c e l e a k a g e c u r r e n t d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) s t a t i c d r a i n - so u r c e o n - r e s i s t a n c e d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 7 0 ) g a t e - s o u r c e c h a r g e g a t e - d r a i n ( " m i l l e r " ) c h a r g e t u r n - o n d e l a y t i m e r i s e t i m e t u r n - o f f d e l a y t i m e f a l l t i m e i n p u t c a p a c i t a n c e o u t p u t c a p a c i t a n c e r e v e r s e t r a n s f e r c a p a c i t a n c e b v d s s b v d s / t j v g s ( t h ) i g s s i d s s c r s s q g q g s q g d t d ( o n ) t d ( o f f ) t r c i s s c o s s t f a f o r w a r d t r a n s c o n d u c t a n c e g f s s _ _ c o c o 2 2 7 v d s = 5 v , i d = 3 a _ _ 1 2 5 v g s = 2 . 5 v , i d = 1 . 2 a s o u r c e - d r a i n d i o d e p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t f o r w a r d o n v o l t a g e v d s _ _ i s = 1 . 2 a , v g s = 0 v . v 1 . 2 2 [ g a t e r e s i s t a n c e r g _ 1 . 7 1 . 1 f = 1 . 0 m h z o r e v e r s e r e c o v e r y t i m e r e v e r s e r e c o v e r y c h a n g e t r r q r r _ _ 1 6 _ _ 8 n s n c i s = 3 a , v g s = 0 v d l / d t = 1 0 0 a / u s 0 1 - j u n - 2 0 0 2 r e v . a p a g e 2 o f 4 h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l notes: 1.pulse width limited by max. junction temperature. 2.pulse width 300us, dutycycle 2%. ?? ?? 3.surface mounted on fr4 board, t 10sec. ?? e l ek tr on isch e b a u e lemen te smg 2314 3.5 a, 20 v ,r ds(on) 75 m n-channel enhancement mode power mos.fet [
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 3 of 4 c h a r a c t e r i s t i c s c u r v e f i g 5 . f o r w a r d c h a r a c t e r i s t i c s o f r e v e r s e d i o d e f i g 1 . t y p i c a l o u t p u t c h a r a c t e r i s t i c s f i g 4 . n o r m a l i z e d o n - r e s i s t a n c e v . s . j u n c t i o n t e m p e r a t u r e f i g 6 . g a t e t h r e s h o l d v o l t a g e v . s . j u n c t i o n t e m p e r a t u r e f i g 2. t yp i c al o u t p u t c h ar ac t e r i s t i c s f i g 3. o n - r e s i s t an c e v . s . g a t e v ol t age e l ek tr on isch e b a u e lemen te smg 2314 3.5 a, 20 v ,r ds(on) 75 m n-channel enhancement mode power mos.fet [
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 4 of 4 f i g 9. m ax i m u m s af e o p e r at i n g a r e a f i g 10. e f f e c t i ve t r an s i e n t t h e r m a l i m p e d an c e f i g 7. g a t e c h ar ge c h ar ac t e r i s t i c s f i g 8. t yp i c al c ap ac i t an c e c h ar ac t e r i s t i c s f i g 1 1. t r an s f e r c h a r ac t e r i s t i c s f i g 12. g a t e c h ar ge w ave f o r m e l ek tr on isch e b a u e lemen te smg 2314 3.5 a, 20 v ,r ds(on) 75 m n-channel enhancement mode power mos.fet [
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