DMN2400UFB4 document number: ds32025 rev. 3 - 2 1 of 6 www.diodes.com october 2010 ? diodes incorporated DMN2400UFB4 n-channel enhancement mode mosfet features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? uitra-small surface mount package ? ultra-low package profile, 0.4mm maximum package height ? lead free by design/rohs compliant (note 1) ? esd protected up to 1.5kv ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn1006h4-3 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: collector dot ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.001 grams (approximate) ordering information (note 3) part number case packaging DMN2400UFB4-7 dfn1006h4-3 3000/tape & reel notes: 1. no purposefully added lead. 2. diodes inc.?s ?green? policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information dfn1006h4-3 top view package pin configuration bottom view d s g source equivalent circuit gate protection diode gate drain esd protected to 1.5kv nc = product type marking code dot denotes drain side nc
DMN2400UFB4 document number: ds32025 rev. 3 - 2 2 of 6 www.diodes.com october 2010 ? diodes incorporated DMN2400UFB4 maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain current (note 4) v gs = 4.5v steady state t a = 25 c t a = 85 c i d 0.75 0.55 a pulsed drain current (notes 4 & 5) i dm 3 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 4) p d 0.47 mw thermal resistance, junction to ambient r ja 258 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 100 na v ds = 20v, v gs = 0v gate-source leakage i gss - - 1.0 a v gs = 4.5v, v ds = 0v gate-source leakage i gss - - 50 a v gs = 10v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 0.5 - 0.9 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - - 0.55 v gs = 4.5v, i d = 600ma - - 0.75 v gs = 2.5v, i d = 500ma - - 0.9 v gs = 1.8v, i d = 350ma forward transfer admittance |y fs | - 1.0 - s v ds = 10v, i d = 400ma diode forward voltage (note 6) v sd 0.7 1.2 v v gs = 0v, i s = 150ma dynamic characteristics (note 7) input capacitance c iss - 36.0 - pf v ds =16v, v gs = 0v, f = 1.0mhz output capacitance c oss - 5.7 - pf reverse transfer capacitance c rss - 4.2 - pf total gate charge q g - 0.5 - nc v gs =4.5v, v ds = 10v, id =250ma gate-source charge q g s - 0.07 - nc gate-drain charge q g d - 0.1 - nc turn-on delay time t d ( on ) - 4.11 - ns v dd = 10v, v gs = 4.5v, r l = 47 ? , r g = 10 ? , i d = 200ma turn-on rise time t r - 3.82 - ns turn-off delay time t d ( off ) - 14.8 - ns turn-off fall time t f - 9.6 - ns notes: 4. device mounted on fr-4 pcb, with minimum recommended pad layout, single sided. 5. device mounted on minimum recommended pad layout test board, 10 s pulse duty cycle = 1%. 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to product testing.
DMN2400UFB4 document number: ds32025 rev. 3 - 2 3 of 6 www.diodes.com october 2010 ? diodes incorporated DMN2400UFB4 01 2 345 fig. 1 typical output characteristics v , drain-source voltage (v) ds 0 0.5 1.0 1.5 2.0 i, d r ai n c u r r e n t (a) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 1.2v gs v = 1.8v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristics v , gate source voltage (v) gs 0 0.5 1.0 1.5 i, d r ain c u r r en t (a) d v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 0 0.2 0.4 0.6 0.8 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v = 1.8v gs v = 4.5v gs v = 2.5v gs 0 0.25 0.50 0.75 1.00 1.25 1.50 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d 0 0.2 0.4 0.6 0.8 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = 2.5.v i = 500ma gs d v = 4.5v i = 1.0a gs d fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0 0.2 0.4 0.6 0.8 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d
DMN2400UFB4 document number: ds32025 rev. 3 - 2 4 of 6 www.diodes.com october 2010 ? diodes incorporated DMN2400UFB4 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.2 0.4 0.6 0.8 1.0 1.2 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i = 250a d i = 1ma d 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0.2 i, s o u r c e c u r r en t (a) s t = 25c a 0 10 20 30 40 50 60 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) f = 1mhz c iss c oss c rss 1 10 100 1,000 2468101214161820 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds i, d r ain-s o u r c e leaka g e c u r r en t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a 2 4 6 8 10 12 fig. 11 typical gate-source leakage current vs. gate-source voltage v , gate-source voltage (v) gs 1 10 100 1,000 10,000 100,000 i, g a t e-s o u r c e leaka g e c u r r en t (na) gss t = 150c a t = 25c a t = 85c a t = 125c a t = -55c a 1 10 100 1,000 10,000 100,000 2 4 6 8 10 12 fig. 12 typical gate-source leakage current vs. gate-source voltage v , gate-source voltage (v) gs i, g a t e-s o u r c e leaka g e c u r r en t (na) gss t = 150c a t = 25c a t = 85c a t = 125c a t = -55c a
DMN2400UFB4 document number: ds32025 rev. 3 - 2 5 of 6 www.diodes.com october 2010 ? diodes incorporated DMN2400UFB4 0.001 0.01 0.1 1 10 100 1,000 fig. 13 transient thermal response t , pulse duration time (s) 1 0.00001 0.0001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 253c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 package outline dimensions suggested pad layout dfn1006h4-3 dim min max typ a ? 0.40 ? a1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z
DMN2400UFB4 document number: ds32025 rev. 3 - 2 6 of 6 www.diodes.com october 2010 ? diodes incorporated DMN2400UFB4 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com
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