SI4442DY vishay siliconix new product document number: 71358 s-03662?rev. b, 14-apr-03 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.0045 @ v gs = 10 v 22 30 0.005 @ v gs = 4.5 v 19 0.0075 @ v gs = 2.5 v 17 so-8 sd sd sd gd 5 6 7 8 top view 2 3 4 1 d g s n-channel mosfet absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source v oltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d 22 15 continuous drain current (t j = 150 c) a t a = 70 c i d 17 11 a pulsed drain current (10 s pulse width) i dm 60 a continuous source current (diode conduction) a i s 2.9 1.3 maximum power dissipation a t a = 25 c p d 3.5 1.6 w maximum power dissipation a t a = 70 c p d 2.2 1 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient a t 10 sec r 29 35 maximum junction-to-ambient a steady state r thja 67 80 c/w maximum junction-to-foot (drain) steady state r thjf 13 16 notes a. surface mounted on 1? x 1? fr4 board.
SI4442DY vishay siliconix new product www.vishay.com 2 document number: 71358 s-03662?rev. b, 14-apr-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a v gs = 10 v, i d = 22 a 0.0035 0.0045 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 19 a 0.0041 0.005 v gs = 2.5 v, i d = 17 a 0.0062 0.0075 forward t ransconductance a g fs v ds = 15 v, i d = 22 a 100 s diode forward voltage a v sd i s = 2.9 a, v gs = 0 v 0.75 1.1 v dynamic b total gate charge q g 36 50 gate-source charge q gs v ds = 15 v, v gs = 4.5 v, i d = 22 a 8 nc gate-drain charge q gd 10.5 gate resistance r g 0.5 1.5 2.6 turn-on delay time t d(on) 17 30 rise time t r v dd = 15 v, r l = 15 11 20 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 125 180 ns fall time t f 47 70 source-drain reverse recovery time t rr i f = 2.9 a, di/dt = 100 a/ s 50 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 012345 v gs = 5 thru 2.5 v 25 c t c = 125 c -55 c 2 v output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 1.5 v
SI4442DY vishay siliconix new product document number: 71358 s-03662?rev. b, 14-apr-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.004 0.008 0.012 0.016 0.020 0246810 0.000 0.002 0.004 0.006 0.008 0.010 0 102030405060 0 2 4 6 8 10 0 20406080100 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 0 1000 2000 3000 4000 5000 6000 0 6 12 18 24 30 c rss c oss c iss v ds = 15 v i d = 22 a v gs = 4.5 v i d = 22 a v gs = 4.5 v v gs = 2.5 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction temperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s i d = 22 a on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v)
SI4442DY vishay siliconix new product www.vishay.com 4 document number: 71358 s-03662?rev. b, 14-apr-03 typical characteristics (25 c unless noted) 0 30 60 10 20 power (w) single pulse power time (sec) 40 50 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effec tive transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 67 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 1 100 600 10 10 -1 10 -2 -0.8 -0.6 -0.4 -0.2 -0.0 0.2 0.4 -50 -25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j - temperature ( c)
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