1/5 XP151A11B0MR power mosfet pin number pin name function 1 g gate 2 s source 3 d drain parameter symbol ratings units drain - source voltage vdss 30 v gate - source voltage vgss 20 v drain current (dc) id 1 a drain current (pulse) idp 4 a reverse drain current idr 1 a channel power dissipation * pd 0.5 w channel temperature tch 150 storage temperature range tstg -55~150 applications notebook pcs cellular and portable phones on-board power supplies li-ion battery systems general description the XP151A11B0MR is an n-channel power mosfet with low on-state resistance and ultra high-speed switching characteristics. because high-speed switching is possible, the ic can be efficiently set thereby saving energy. in order to counter static, a gate protect diode is built-in. the small sot-23 package makes high density mounting possible. features low on-state resistance : rds(on) = 0.12 @ vgs = 10v : rds(on) = 0.17 @ vgs = 4.5v ultra high-speed switching gate protect diode built-in driving voltage : 4.5v n-channel power mosfet dmos structure small packabe : sot-23 pin configuration pin a ssignment equivalent circuit absolute maximum ratings ta = 2 5 * when implemented on a ceramic pcb etr1117_001
2/5 XP151A11B0MR parameter symbol conditions min. typ. max. units drain cut-off current idss vds= 30v, vgs= 0v - - 10 a gate-source leak current igss vgs= 20v, vds= 0v - - 10 a gate-source cut-off voltage vgs(off) id= 1ma, vds= 10v 1.0 - 3.0 v id= 0.5a, vgs= 10v - 0.09 0.12 drain-source on-state resistance *1 rds(on) id= 0.5a, vgs= 4.5v - 0.13 0.17 forward transfer admittance *1 | yfs | id= 0.5a, vds= 10v - 2.4 - s body drain diode forward voltage vf if= 1a, vgs= 0v - 0.8 1.1 v parameter symbol conditions min. typ. max. units thermal resistance (channel-ambience) rth (ch-a) implement on a ceramic pcb - 250 - /w parameter symbol conditions min. typ. max. units input capacitance ciss - 150 - pf output capacitance coss - 90 - pf feedback capacitance crss vds= 10v, vgs=0v f=1mhz - 30 - pf parameter symbol conditions min. typ. max. units turn-on delay time td (on) - 10 - ns rise time tr - 15 - ns turn-off delay time td (off) - 25 - ns fall time tf vgs= 5v, id= 0.5a vdd= 10v - 45 - ns electrical characteristics dc characteristics t a = 25 *1 effective during pulse test. t a = 25 switching characteristics thermal characteristics dynamic characteristics t a = 25
3/5 XP151A11B0MR typical perfomance characteristics
4/5 XP151A11B0MR typical perfomance characteristics (continued) (11) standardized transition thermal resistance vs. pulse width
5/5 XP151A11B0MR 1. the products and product specifications contained herein are subject to change without notice to improve performance characteristics. consult us, or our representatives before use, to confirm that the information in this catalog is up to date. 2. we assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this catalog. 3. please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this catalog. 4. the products in this catalog are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. please use the products listed in this catalog within the specified ranges. should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. we assume no responsibility for damage or loss due to abnormal use. 7. all rights reserved. no part of this catalog may be copied or reproduced without the prior permission of torex semiconductor ltd.
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