igc07 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l748 3 c , edition 1 , 31 . 10 .200 7 igbt4 low power chip this chip is used for: low / medium power module s features : 1200v trench + field s top technology low switching losses positive temperature coefficient easy paralleling applications: low / medium power drives g c e chip type v ce i cn die size package igc07 t120t6 l 1200v 4 a 2 . 54 x 2 . 72 mm 2 sawn on foil mechanical parameter raster size 2.54 x 2.72 emitter pad size 1.029 x 1.248 gate pad size 0.358 x 0.514 area total / active 6.9 / 2.8 mm 2 thickness 115 m wafer size 1 50 mm flat po sition 9 0 gr d max.pos sible chips per wafer 2162 passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag ? system suitable for epoxy and soft solder die bonding die bond e lectrically conductive glue or solder wire bond al, <500m reject i nk dot s ize ? 0.65mm ; max 1.2mm recommended storage e nvironment s tore in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
igc07 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l748 3 c , edition 1 , 31 . 10 .200 7 maximum ratings parameter symbol value unit collector - e mitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 12 a gate - e mitter voltage v ge 20 v operating junction temperature t j - 40 ... +175 c short circuit data 2 ) v ge = 15v, v cc = 8 00v, t vj = 150c t p 10 s reverse bias safe operating area 2 ) (rbsoa) i c max = 8 a, v ce max = 1200v, t vj max = 150c 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characteriza tion static characteristics (tested on wafer ) , t j =25 c value parameter symbol conditions min. typ. max. unit collector - e mitter breakdown voltage v (br)ces v ge =0v , i c = 0. 5 ma 1200 collector - e mitter saturation voltage v ce (sat) v ge =15v, i c =4 a 1. 6 1.8 5 2. 1 gate - e mitter threshold voltage v ge(th) i c = 0. 15 ma , v ge =v ce 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v 0.5 a gate - e mitter leakage current i ges v ce =0v , v ge =2 0v 120 na integrated gate resistor r gint - w electrical characteristics ( not subject to production test - verified by design/characterization ) value parameter symbol conditions min. typ. max. unit input capacitance c iss 250 output capacita nce c oss 25 reverse transfer capacitance c rss v ce =25v, v ge =0v, f=1mhz 15 pf
igc07 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l748 3 c , edition 1 , 31 . 10 .200 7 switching characteristics i nductive l oad ( not subject to production test - verified by design / characterization ) value parameter symbol conditions 1) min. typ. max. unit turn - on delay t ime t d(on) tbd rise time t r tbd turn - off delay time t d(off) tbd fall time t f t j =125 c v cc =600v, i c =4 a, v ge = - 15/15v, r g = --- w tbd ns 1) values also influenced by parasitic l - and c - in measurement and package.
igc07 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l748 3 c , edition 1 , 31 . 10 .200 7 chip drawing
igc07 t120 t6 l edited by in fineon technologies , aim pmd d cid cls , l748 3 c , edition 1 , 31 . 10 .200 7 fur the r electrical characteristics this chip data sheet refers to the device data sheet tbd description aql 0,65 for visual inspection according to failure catalog ue electrostatic discharge sensitive device according to mil - std 883 test - normen villach/pr ffeld published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007 all rights reserved attention please! the information herein is given to describe certain components and shall not be considered as warranted charac teristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see a ddress list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - s upport devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other perso ns may be endangered.
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