igc142t120 t6 rm edited by in fineon technologies , aim pmd d cid cls , l7693 b , edition 1 , 31.10. 200 7 igbt4 medium power chip this chip is used for: medium power module s features: 1200v trench + field s top technology low switching losses soft turnoff positive temperature coefficient easy paralleling applications: medium power drives g c e chip ty pe v ce i cn die size package igc142t120t6 r m 1200v 150a 11.31 x 12.56 mm 2 sawn on foil mechanical parameter raster size 11.31 x 12.56 emitter pad size (incl. gate pad) 11.04 x 9.80 gate pad size 1.31 x 0.81 area total / active 142.1 / 113.1 mm 2 thickness 120 m wafer size 150 mm flat po sition 90 grd max.possible chips per wafer 94 passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag ? system suitable for epoxy and soft solder die bonding die bond e lectrically con ductive glue or solder wire bond al, <500m reject ink dot s ize ? 0.65mm ; max 1.2mm recommended storage e nvironment s tore in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
igc142t120 t6 rm edited by in fineon technologies , aim pmd d cid cls , l7693 b , edition 1 , 31.10. 200 7 maximum ratings parameter symbol value uni t collector - e mitter voltage, t j =25 c v ce 1200 v dc collector current, limited by t j max i c 1 ) a pulsed collector current, t p limited by t j max i c , puls 450 a gate - e mitter voltage v ge 20 v maximum junction temperature t vj,max - 40 ... +175 c short circuit data 2 ) v ge = 15v, v cc = 8 00v, t vj = 150c t p , max 10 s reverse bias safe operating area 2 ) (rbsoa) i f,max = 3 00a, v r,max = 12 00v, t vj,op 150 c 1 ) depending on thermal properties of assembly 2 ) not subject to producti on test - verified by design/characterization static characteristics (tested on wafer ) , t j =25 c value parameter symbol conditions min. typ. max. unit collector - e mitter breakdown voltage v (br)ces v ge =0v , i c = 6 ma 1200 c ollector - e mitter saturation voltage v ce(sat) v ge =15v, i c =150a 1.5 5 1.8 2.0 5 gate - e mitter threshold voltage v ge(th) i c =6ma , v ge =v ce 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v 20 a gate - e mitter leakage current i ges v ce =0 v , v ge =2 0v 600 na integrated gate resistor r gint 5 w electrical characteristics ( not subject to production test - verified by design / characterization ) value parameter symbol conditions min. typ. max. unit input capacitance c iss 9300 output capacitance c oss 580 reverse transfer capacitance c rss v ce =25v, v ge =0v, f=1mhz 510 pf
igc142t120 t6 rm edited by in fineon technologies , aim pmd d cid cls , l7693 b , edition 1 , 31.10. 200 7 switching characteristics i nductive l oad ( not subject to production test - verified by design / characterization ) valu e parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) tbd rise time t r tbd turn - off delay time t d(off) tbd fall time t f t j =125 c v cc =600v, i c =150a, v ge = - 15/15v, r g = --- w tbd ns 1) values also influenced by parasitic l - and c - in measureme nt and package.
igc142t120 t6 rm edited by in fineon technologies , aim pmd d cid cls , l7693 b , edition 1 , 31.10. 200 7 chip drawing
igc142t120 t6 rm edited by in fineon technologies , aim pmd d cid cls , l7693 b , edition 1 , 31.10. 200 7 fur ther electrical characteristics switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. further technical inf ormation about the performance of this chip in module tbd is given exemplarily at www.infineon.com/igbtmodules. description aql 0,65 for visual inspection according to failure catalog ue electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007 all rights reserved attention please! the information herein is given to describe certain components and shall not be conside red as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representa tives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or e ffectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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