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| inchange semiconductor isc product specification isc silicon npn power transistor BD635 description dc current gain - : h fe = 40(min.)@ i c = 25ma collector-emitter breakdown voltage- : v (br)ceo = 60v(min.) complement to type bd636 applications designed for amplifier and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 2 a i cm collector current-peak 5 a i b b base current-continuous 0.3 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BD635 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = 30ma; i b = 0 60 v v (br)cbo collector-base breakdown voltage i c = 0.1ma; i e = 0 60 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 5 v v ce( sat ) collector-emitter saturation voltage i c = 1a; i b = 0.1a b 0.6 v v be( on ) base-emitter on voltage i c = 1a; v ce = 2v 1.3 v i ces collector cutoff current v ce = 60v; v be = 0 0.2 ma h fe-1 dc current gain i c = 25ma; v ce = 2v 40 h fe-2 dc current gain i c = 1a; v ce = 2v 25 isc website www.iscsemi.cn 2 |
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